• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.260-263
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• 2013

A semiconducting single-walled carbon nanotube (SWCNT) field-effect transistor (FET) in a top-gate model was constructed. The effect of different high-${\kappa}$ dielectric materials ($Al_2O_3$, $HfO_2$ and HfSiON) and various temperatures with a wide range from 50K to 500K on the performance of such nominal device were investigated. Several key device parameters including the on/off ratio of the current, transconductance ($g_m$), subthreshold swing, and carrier mobility were used to evaluate the device performance. The simulated results fit well with the experiment results previously published.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2315-2317
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• 2005

In this paper, an iterative method to model the electromagnetic heating of electrically large lossy dielectrics is presented. Frequency domain finite element (FEM) solutions of the wave equation are determined for the lossy inhomogeneous dielectric as the material properties are change with temperature and time. The power absorbed from microwave losses is applied to a finite element time domain (FETD) calculation of the heat diffusion equation. Time steps appropriate for updating the piecewise material properties in the wave equation and the time stepping of the heat equation are presented. The effects of preheating and source frequency are investigated.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.601-604
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• 1993

The effect of an insulator inserted along the axis of a red-to-plane gap on an ion flow field in $SF_6$ gas is investigated experimentally in the pressure region where a proceeding corona discharge exists. Without the insulator, the calculated electric field on the plane electrode agrees fairly well with the measured one. With the insulator, the ion flow field characteirstics may be attributed to the change in the electric field distribution by the accumulated charge, the increase in the ratio of the dielectric strength in gas gap to that along the insulator surface with the gas pressure, and the thermal diffusion of ions near the insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.403-404
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• 2005

The conductivity of diamond like carbon films embedded with silver nanoclusters were investigated as a function of silver concentrations in the film. By increasing the concentration of silver in the film from 0 to 20 at% the conductivity varied from $10^{-13}$ to $10^2\;ohm^{-1}\;cm^{-1}$. The data have been discussed within the model of a dielectric matrix containing conductive inclusions. The conductivity data analysis using percolation theory has been showed that percolation threshold occurred at Ag percentage in the film $x_c$ =5 at %.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.6
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• pp.80-91
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• 2008

Electrostatic forces have an advantage of directly levitating not only non-ferromagnetic metals but also semiconductors, such as silicon wafers, and dielectric materials like glass. This paper describes the characteristics of electrostatic forces and electrostatic suspension system, followed by the basic principle of 1-DOF(degree of freedom) electrostatic suspension system, and the structures of electrodes-for-suspension and voltage supplying methods to the electrodes in 1-DOF model. This paper also discuss about the minimum number of electrodes needed to control n-DOF motion of the suspended object and represents some desirable electrode patterns to stabilize the 6-DOF motion of the object. In the near future, electrostatic suspension system is expected to be applied to industrial manufacturing processes, for example, to the manufacture of semiconductor devices and/or flat panel display devices.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.301-305
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• 1995

습식 분위기로 성장한 게이트 산화막 위에 다결정 실리콘(poly-Si)과 텅스텐 폴리사이드(WSix/poly-Si)게이트 전극을 형성하여 제작한 금속-산화물-반도체(metal-oxide-semiconductor:MOS)의 전기적 특성을 순간 절연파괴(time zero dielectric breakdown: TZDB)로 평가하였다. 텅스텐 폴리사이드 게이트 전극에 따른 게이트 산화막의 평균 파괴정계는 다결정 실리콘 전극보다 1.93MV/cm 정도 낮았다. 텅스텐 폴리사이드 게이트 전극에서 게이트 산화막의 B model(1-8 MV/cm)불량률은 dry O2 분위기에서 열처리함으로써 증가하였다. 이것은 열처리함으로써 게이트 전극이 silane(SiH4)에 의한 것보다 B mode 불량률이 감소하였다. 그것은 dichlorosilane 환원에 의한 텅스텐 실리사이드내의 불소 농도가 silane에 의한 것보다 낮기 때문이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1187-1190
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• 2004

In this paper we analyze the reflection characteristics of a dielectric microstrip line with an open-end termination containing optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in the laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated the transmission line model. To estimate theoretically the characteristic response of same systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time response in microwave systems have been calculated.

• Bulletin of the Korean Chemical Society
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• v.11 no.6
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• pp.546-552
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• 1990

Enthalpies of solution of aniline, pyridine and benzylamine in iso-dielectric mixtures of methanol with acetonitrile (AN), nitrobenzene (NB) and nitromethane (NM) have been measured calorimetrically. The solute-solvent interaction was analyzed using a model developed by Waghorne et al. and found that the relatively weak base, aniline, tended to behave anomalously, especially in the NB and NM binary systems by forming bidentate hydrogen bonds between the two-$NH_2$ hydrogens and the two-$NO_2$ oxygens. Pyridine and benzylamine were found to be preferentially solvated by methanol in all the binary mixtures.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.1
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• pp.25-32
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• 2015

Dielectric barrier discharge (DBD) plasma actuator was designed to reduce aerodynamic drag in a cylindrical model and wind tunnel test was performed at various wind velocities. In addition, computational fluid dynamics (CFD) analysis and flow visualization were used to investigate the effect of the plasma on the flow stream in the cylinderical model. At low wind velocity, the plasma actuator had no effects because flow separation did not appear. The aerodynamic drag was reduced by 14% at 14 m/s and by 27% at 17 m/s, respectively. It was confirmed by CFD analysis and flow visualization that the DBD plasma actuator decreased in pressure difference around the cylindrical model, thus decreasing the magnitude of wake vortex.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.