• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.436-439
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• 2000

Change of dielectric loss of use in high relative permitivity capacitor BaTiO$_3$ ceramic depends on Mn doping have been investigated. The powders used in this study were commercial BaTiO$_3$, TiO$_2$and, MnCO$_3$. Sample was fabricated by conventional ceramic process. The quantity of Mn was changed gradually from 0.lmol% to 10mo1%. The sintering densities were reduced with increasing amount of MnCO$_3$. This result is because of increase of low density second phase BaMnO$_3$. When the samples were doped by over 0.2mol% of MnCO$_3$, average grain sizes were enlarge to several tens ${\mu}{\textrm}{m}$. The dielectric losses were reduced by Mn doping to lmol% but, increased from lmol% to 10mo1% gradually.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.6 no.5
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• pp.27-37
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• 1992

We studied the dielectric and dynamic mechanical losses according to the quenching condition in low density polyethylene being used to power cables. According to severe quenching condition, characteristics of the temperature in internal friction los peak have decreased the magnitude of loss peak as amorphous region lengthen. From now on, the frequency dependent characteristics of dielectric loss have investigated at room temperature, and the dielectric loss peak due to interface polarization, between crystal and amorphous region, occurs about 30[Hz], and that, the peak due to orientation polarization in correspondence to the loss peak in internal friction has observed at about 3 [MHz]. As quenching velocity increased, the effect on quenching condition about the dielectric loss has decreased the magnitude of the loss peak. Thus, estimation has been carried out on the activation energies nd the degree of crystallinity by means of X-ray diffraction are obtained as follows: room quenching : 26.4 [kal/mole] and 54.73 [%], ice quenching : 25.6 [kcal/mole] and 48.47 [%], liquid nitrogen quenching specimens : 22.56 [kcal/mole] and 40.95 [%].

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Elastomers and Composites
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• v.18 no.2
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• pp.51-59
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• 1983

The dielectric properties of polymers are very important when investigating the molecular structure of polymers. The characteristics of the dielectric absorption in vulcanized natural rubber were studied in frequency ranging from 10[KHz] to 32[MHz] at the temperature of 25[$^{\circ}C$]. As a result of the study, it has been confirmed that natural rubber vulcanized below 4phr leads to two kinds of dielectric losses due to the interfacial polarization and the dipole polarization by sulfur, and of above 7[%] was only a loss due to the dipole polarization by sulfur. Futhermore, the dielectric loss maximum $tan{\delta}$ spectrum, removed to the low frequency in accordance with increasing sulfur, depends greatly on sulfur. The volume resistivity of $10^{7}{\sim}10^{11}[{\Omega}{\cdot}cm}]$, regardless of whether the crosslinking of rubber is weakened by sulfur, was observed.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.11-17
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• 2001

In this paper, spherical Luneburg lens antennas have been systematically analyzed using the Eigenfunction Expansion Method (EEM), The developed technique has capability of performing a complete 3-D analysis to characterize the multi-layered dielectric spherical lens with arbitrary permittivity and permeability. This paper describes the analysis technique, and presents the results of the parametric study of Luneburg lens antennas by varying design parameters suoh as the diameter of the lens antenna (up to 80 wavelength), number of spherical shells (up to 30 shells), air-gaps between spherical shells, and dielectric loss of the material. Many representative engineering design curves including the far-field patterns, wide-angle sidelobe characterizations, antenna efficiency have been presented.

• Journal of the Optical Society of Korea
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• v.8 no.1
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• pp.17-20
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• 2004

An in-line variable attenuator has been proposed and demonstrated exploiting a side-polished single-mode (SM) fiber evanescently coupled with an index matched dielectric plate. The attenuation can be controlled by fine mechanical sliding of the index matched dielectric plate. We have achieved 49 ㏈ dynamic range and very low excess loss of 0.2 ㏈ at 1550 nm wavelength. The measured polarization dependent losses (PDL) were 0.1, 0.2, and 0.4 ㏈ at 10, 20, and 30 ㏈ attenuation, respectively. Wavelength sensitivity was measured to be -0.017/nm ㏈ at 20 ㏈ attenuation.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.4
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• pp.220-224
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• 2012

The analysis on the bus bar effect is conducted to develop a cost effective 24kV/2,000A switchgear. The temperature enclosures and bus bars could rise due to several heat sources such as eddy current losses and copper losses. Therefore, a study on the characteristics of the electric field intensity and electromagnetic loss according to the bus bar size in a bus bar compartment is essential to design a electrically reliable high voltage switchgear. It is investigated that the electromagnetic influence to the temperature rising and the dielectric stability according to various bus bar sizes by using finite element method(FEM). The electric field intensity and electromagnetic loss according to various bus bar sizes are calculated to design a reliable and a high voltage switchgear. As results, it is found that the electromagnetic loss and the dielectric stability of bus bar could be determined by a bus bar size. It means that a cost effective 24kV/2,000A high voltage switchgear could be developed by selecting the proper size of a bus bar. Also, it is recognized that the electromagnetic characteristics according to various bus bar sizes in order to design an electrically stable high voltage switchgear when the enclosure size is determined as a fixed value. Futhermore, studies on the various nominal voltage class and bus bar sizes will be conducted to develop a cost effective high voltage switchgear.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.