Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The effect of annealing for dielectric properties of Ti doped $K(Ta,Nb)O_3$ thin film using PLD

PLD를 사용하여 Ti doped K(Ta,Nb)O3 thin film의 유전특성을 위한 annealing 효과

  • Koo, Ja-Yl (Department of Digital Electronics Information, Inha technical college) ;
  • Yi, Chong-Ho (Department of Digital Electronics Information, Inha technical college) ;
  • Bae, Hyung-Jin (Department of Materials Science and Engineering, University of Florida) ;
  • Lee, Won-Suk (Department of School of Electronics Engineering, Dongyang technical College)
  • 구자일 (인하전문대학 디지털전자정보과) ;
  • 이종호 (인하전문대학 디지털전자정보과) ;
  • 배형진 ;
  • 이원석 (동양전문대학 전기전자통신공학부)
  • Published : 2006.06.21
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Abstract

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

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