• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.829-834
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• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.215-218
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• 1994

Dielectric properties of $(Sr_{l-x}{\cdot}Ca_x)_mTiO_3+0.006Nb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.996$N_2$) were painted on the surface with CuO paste, and then annealed at $1100^{\circ}C$ for 2hr. Grain size increased with increasing substitutional contents of Ca up to 15[mol%], but decreased with further substitution. In the specimens with $10{\sim}15[mol%]$ of Ca and m=1, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss($tan{\delta}[%]$) <0.3[%] and capacitance change rate with temperature <${\pm}10[%]$, respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over $10^6[Hz]$.

• Polymer(Korea)
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• v.24 no.3
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• pp.350-357
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• 2000

Curing behaviors of glass/epoxy prepreg for printed circuit boards (PCB) were studied by using dielectrometer and differential scanning calorimeter. This prepreg was showed the lowest ionic viscosity at about 115$^{\circ}C$, and then the ionic viscosity was gradully increased up to 15$0^{\circ}C$. This indicated that the curing reaction of this prepreg started at 115$^{\circ}C$ and the molecular weight was increased by the accelerated thermal cross-linking reaction. The loss factor and tan $\delta$ values were also measured and discussed. The dielectric behaviors of this prepreg system were also measured according to the cure cycle for PCB. This material was found to be thermally stable up to about 30$0^{\circ}C$ and then was showed an abrupt decomposition beyond this temperature.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.251-254
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• 1998

The ($0.8BaTiO_3-0.1SrTiO_3-0.1MgTiO_3$)+$0.006Nb_2O_5$ ceramics were fabricated by conventional ceramic process. The dielectric property of specimen was investigated that the specimen was sintering temperature at 1,300C for 3hours and then annealed at $1,100^{\circ}C$ for 3hours in a atmosphere (air) to be painted on the surface with CuO paste. The results of the temperature and frequency are varied, the dielectric constant and loss tangent are unsuitable for BL capacitor. The dielectric constants were varied to be negative temperature coefficient(2.000-3,000) in the temperature range between -10 and $140^{\circ}C$, the dissipation factors (tan $\delta$) were some high(0.1-0.3). It was not grain insulation, in cause of the some difficult to be annealed temperature with CuO paste and fired atmosphere. But, we have some different annealing temperature and fired atmosphere, it will be suitable BL(Boundary Layer)capacitor.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.689-695
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• 1991

Dielectric properties of Ba1-$\chi$Sr$\chi$Ti1-yCayO3-y ceramics, where Sr and Ca were doped to Ba-site and Ti-site within the range of 0 x 0.24 and 0 y 0.05, respectively, were investigated. The substitution of Ca for Ti, which maintained the high resistivity of these formulations after sintering in a reducing atmosphere, was confirmed. Ca addition decreased the tetragonality c/a, increased the unit cell volume, and lowered Curie temperature, which were attributed to the occupancy of Ca2+ ions on Ti-sites. The lowering of Curie temperature by Ca addition was affected by the substitution of Sr for Ba-site; within 2 mol% of Ca, Curie temperature was lowered at a rate of 2$0^{\circ}C$ and 16$^{\circ}C$ per mol% of Ca at x=0 and x=0.08, respectively. Whereas the resistivity of the formulations without Ca was reduced to 107 {{{{ OMEGA }}cm, when sintered at low oxygen partial pressure of 10-9 MPa, the resistivity value higher than 1011 {{{{ OMEGA }}cm was maintained for the formulations containing Ca more than 0.5 mol%. Dielectric loss factor, tan$\delta$, was about 1% for most formulations.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.413-418
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• 2009

Glass systems based on Ca, Sr, Ba, and Zn modified alumino-boro silicates were investigated in order to improve the dielectric and mechanical properties of a typical LTCC (low temperature co-fired ceramic) which was developed for high frequency highly-integrated modules. The glass was prepared by a typical melting procedure and then mixed with cordierite fillers to fabricate glass/ceramic composite-type LTCC materials. The amount of cordierite filler was fixed at 50 volumetric%. For an optimal glass composition of 7.5% CaO, 7.5% BaO, 5% ZnO, 10% $Al_2O_3$, 30% $B_2O_3$, and 40% $SiO_2$ in mole ratio, the resultant LTCC composite showed a dielectric constant of 5.8 and a dielectric loss ($tan{\delta}$) of 0.0009 after firing at $900^{\circ}C$. An average bending strength of 160MPa was obtained for the optimal composition.

• Journal of Powder Materials
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• v.25 no.6
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• pp.494-500
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• 2018

In this study, the effect of the content of $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) glass additives on the properties of AlN ceramics is investigated. Dilatometric analysis and isothermal sintering for AlN compacts with MCAS contents varying between 5 and 20 wt% are carried out at temperatures ranging up to $1600^{\circ}C$. The results showed that the shrinkage of the AlN specimens increases with increasing MCAS content, and that full densification can be obtained irrespective of the MCAS content. Moreover, properties of the AlN-MCAS specimens such as microhardness, thermal conductivity, dielectric constant, and dielectric loss are analyzed. Microhardness and thermal conductivity decrease with increasing MCAS content. An acceptable candidate for AlN application is obtained: an AlN-MCAS composite with a thermal conductivity over $70W/m{\cdot}K$ and a dielectric loss tangent (tan ${\delta}$) below $0.6{\times}10^{-3}$, with up to 10 wt% MCAS content.

• Journal of Navigation and Port Research
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• v.28 no.4
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• pp.293-297
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• 2004

In this papers, an S-band oscillator of the low phase noise property using a miniaturized micro-strip hairpin shaped ring resonator is presented The substrate has a dielectric constant $\epsilon_\gamma$＝3.5, a thickness h＝0.508 mm, and loss tangent $tan\delta$＝0.002. A designed and fabricated oscillator shows low phase noise performance of 99. 71 dBc/Hz at 100 KHz offset frequency and of output power 19.584 dBm at center frequency 2.450 GHz. This circuit was fabricated with hybrid technique, but can be fully compatible with the MMIC due to its entirely planar structure.