• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.125-125
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• 2006

We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.119-122
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• 1987

By cascading the step discontinuities on planar dielectric waveguides with a ferrite layer through two uniform planar dielectric waveguides, nonreciprocal scaterring characteristics of planar dielectric waveguide gratings are analyzed. The calculated results at 35GHz shows that the isolation mechanism takes place near band stop frequency range.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.907-918
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• 2006

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1840-1842
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• 1997

MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large $\gamma$-Coefficients. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore in this study. MgO protection layer is prepared on dielectric layer by R.F. magnetron sputtering with Mg target under various conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporatior.

• 한국인터넷방송통신학회논문지
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• 제22권1호
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• pp.29-34
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• 2022

본 논문에서는 접지된 2중 유전체층 사이의 저항띠 격자구조에 의한 H-polarized 산란 문제는 전자파 수치해석 방법으로 알려진 PMM(point matching method)을 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 저항띠의 해석을 위해 저항경계조건을 적용하였다. 유전층의 비유전율과 정방행렬의 행수의 크기에 따른 반사전력의 수렴도의 %error를 비교하였으며, 정방행렬의 행수의 크기가 클수록 반사전력의 정확도는 증가하였다. 저항띠의 저항율이 작아지거나, 유전층의 두께가 작아지거나, 그리고 유전체 층의 비유전율이 증가하면, 반사전력은 증가하였다. 접지된 2중 유전체층을 가지는 본 논문의 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 잘 일치하였다.

• 전자공학회논문지A
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• 제32A권12호
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.

• 대한기계학회논문집A
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• 제35권6호
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• pp.583-589
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• 2011

순수한 전기장 하에서의 뼈와 유사한 재료의 절연파괴에 대하여 연구하였다. 일반적으로 뼈와 유사한 재료는 강한 유전강도를 가지는 층과 약한 유전강도를 가지는 층이 서로 평행하게 엇갈려 있는 형태로 구성되어 있다. 뼈와 유사한 재료의 약한 층을 관통하는 전도채널의 성장은 전기장의 집중이 완화되기 때문에 지연된다. 관형채널의 선단에서 전기장의 분포를 유한요소해석을 통해 구하였다. 뼈와 유사한 재료의 절연강도를 J 적분을 사용하여 계산하였고, 절연강도에 영향을 미치는 인자들을 찾아내었다. J 적분은 약한 층에서의 절연파괴 면적이 증가할 수록 작아짐을 보였다. 또한, 약한 층과 강한 층의 유전율의 비가 절연파괴에 큰 영향을 미치는 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1119-1122
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.499-502
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• 2008

Effects of a dielectric capping layer on the luminous characteristics of top emitting organic light emitting diodes (TOLEDs) have been analyzed using a classical electromagnetic theory. Special attention was given to the influence of the cavity length on the effectiveness of the capping layer. The luminance characteristics of the TOLEDs influenced by the combined effects of the cavity length and the capping layer thickness. Furthermore, these combined effects also modify the emission spectrum and pattern of the TOLEDs, which result in the improvement of total luminance of the device, but no significant change in the device out-coupling efficiency.