• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.125-125
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• 2006

We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.119-122
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• 1987

By cascading the step discontinuities on planar dielectric waveguides with a ferrite layer through two uniform planar dielectric waveguides, nonreciprocal scaterring characteristics of planar dielectric waveguide gratings are analyzed. The calculated results at 35GHz shows that the isolation mechanism takes place near band stop frequency range.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.907-918
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• 2006

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1840-1842
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• 1997

MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large $\gamma$-Coefficients. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore in this study. MgO protection layer is prepared on dielectric layer by R.F. magnetron sputtering with Mg target under various conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporatior.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.1
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• pp.29-34
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• 2022

In this paper, thr H-polarized scattering problems by a resistive strip grating in a grounded double dielectric layer are analyzed by applying the PMM(point matching method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the resistive boundary condition is applied to analysis of the resistive strip. The %error of the convergence of the reflected power according to the relative permittivity of the dielectric layer and the size of the number of rows in the square matrix was compared, as the size of the number of rows in the square matrix increased, the accuracy of the reflected power increased. As the resistivity of the resistive strip decreased, the thickness of the dielectric layers decreased, and the relative permittivity of the dielectric layers increased, the reflected power increased. The numerical results for the presented structure of this paper having a grounded double dielectric layer are shown in good agreement compared to those of the existing papers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.6
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• pp.583-589
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• 2011

The dielectric breakdown of bone-like materials subject to purely electric fields is investigated. In general, these materials consist of some layers with stronger dielectric strength and others with weaker dielectric strength in a parallel staggered pattern. The growth of the conductive channel is impeded during penetration of the weaker layer in the bone-like material because the electric-field concentration is relieved. The electric-field distribution around the head of the tubular channel is obtained from finite element analysis. The dielectric strength of the bone-like material is evaluated using the J integral, and some parameters affecting the dielectric strength are determined. It is shown that the J-integral values are reduced with an increase in the breakdown area in the weaker layer. It is also found that the ratio of the permittivity of the weaker layer to that of the stronger layer can strongly affect the dielectric breakdown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1119-1122
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.499-502
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• 2008

Effects of a dielectric capping layer on the luminous characteristics of top emitting organic light emitting diodes (TOLEDs) have been analyzed using a classical electromagnetic theory. Special attention was given to the influence of the cavity length on the effectiveness of the capping layer. The luminance characteristics of the TOLEDs influenced by the combined effects of the cavity length and the capping layer thickness. Furthermore, these combined effects also modify the emission spectrum and pattern of the TOLEDs, which result in the improvement of total luminance of the device, but no significant change in the device out-coupling efficiency.