• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.2
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• pp.237-242
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• 2012

In this paper, we investigated effects of ITO electrode geometry and dielectric layer thickness on the discharge Characteristic of AC PDP. As the dielectric thickness is decreased ($30{\sim}12{\mu}m$), firing and sustain voltage is decreased. Luminance and discharge power increase with decreasing dielectric layer thickness because of increasing capacitance between plasma and electrodes. Reactive power decreases with dielectric thickness due to reduced capacitance between sustain electrodes. For the high Xe test panel with small ITO electrode, luminous efficacy as well as luminance increase with decreasing dielectric layer thickness. This result suggest that high power density and small plasma volume is beneficial for high efficacy discharge.

• Applied Microscopy
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• v.46 no.3
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• pp.155-159
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• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.737-740
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• 2007

The buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. this functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the dielectric layer. With the help of proposed hydrophobic layer, the transistor showed dramatic improvement at electrical performance which was almost 20 times higher mobility compared to the non-treated case. And on/off ratio was also guaranteed as $10^{5{\sim}6}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.826-828
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• 2003

With a new PDP transparent dielectric layer formation technique, we were able to make dielectric layer with high transmittance by using dry film type dielectric material. We optimized dielectric pastes for dry film and they showed good process properties in lamination , drying and firing.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1444-1446
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• 2009

The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.388-389
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• 2005

In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.543-546
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• 2003

We studied the dielectric layer effect on the electro-optical (EO) properties of liquid crystal (LC) devices together with numerical simulations. Recently, it has been reported that the surface dielectric layer affects significantly the EO performances of LC microlens arrays and wide-viewing LC displays. it is found that the operation voltage of the LC device decreases with increasing the dielectric constant or with decreasing the thickness of the dielectric polymer layer. The experimental data agree well with theoretical results predicted in a simple dielectric model within the continuum formalism.

• Journal of Magnetics
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• v.14 no.1
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• pp.31-35
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• 2009

Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.