• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.182-182
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.44-45
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• 1999

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.309-310
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• 2003

We have designed novel transreflective liquid crystal displays which utilize dielectric mirrors. The reflective and transmissive modes are operated in different wavelength regions. The displays have the advantages: (1) the brightness as a function of applied voltage is the same for both modes, (2) the backlight and ambient light are utilized efficiently.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.288.1-288.1
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• 2014

We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• Advances in nano research
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• v.2 no.3
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• pp.173-177
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• 2014

This study is aimed to the numerical modeling of the surface plasmon-polariton excitation by a layer of active (electrically pumped) quantum dots embedded in a semiconductor, covered with a metal. It is shown that this excitation becomes much more efficient if the metal has a form of a thin (with thickness of several nanometers) film. The cause of this enhancement in comparison with a thick covering metal film is the partial surface plasmon-polariton localized at the metal-semiconductor interface penetration into air. In result the real part of the metal+air half-space effective dielectric function becomes closer (in absolute value) to the real part of the semiconductor dielectric function than in the case of a thick covering metal film. This leads to approaching the point of the surface plasmon-polariton resonance (where absolute values of these parts coincide) and, therefore, the enhancement of the surface plasmon-polariton excitation. The calculations were made for a particular example of InAs quantum dot layer embedded in GaAs matrix covered with an Au film. Its results indicate that for the 10 nm Au film the rate of this excitation becomes by 2.5 times, and for the 5 nm Au film - by 6-7 times larger than in the case of a thick (40 nm or more) Au film.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.894-900
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• 2006

The electrical characteristics associated with crystal structure changes as a function of La content for $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films were investigated for applications in memory capacitors. Tetragonality of PLZT films decreased with increasing La content. Thin films with La $\geq$ 20 mol% were found to be cubic. Films with La $\geq$ 12 mol% exhibited broader dielectric peaks compared to those of bulk ceramics and behaved as relaxer ferroelectrics. Tetragonal PLZT film with 12 mol% La had a dielectric constant maximum of 1330 at room temperature and a charge storage density of ${\sim}18{\mu}C/cm^2$ at 5 V. Decrease in coercive field and remnant polarization with increase in La content were resulting from less dipolar response caused by the decreased crystal anisotropy. The leakage current densities $<10^{-8}A/cm^2$ up to 5 V bias voltage were observed for the films with La $\geq$ 14 mol%.

• Bulletin of the Korean Chemical Society
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• v.21 no.5
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• pp.503-509
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• 2000

The solvent effects on the relative free energies of solvation and the difference in partition coefficients (log P) for $Rb^+$ to $K^+$ mutation in several solvents have been investigated using Monte Carlo simulation (MCS) of statistical perturbation theory(SPT). In comparing the relative free energies for interconversion of one ion pair, $Rb^+$ to $K^+$, in $H_2O$(TIP4P) in this study with the relative free energies of the computer simulations and the experimental, we found that the figure in this study with the relative free energies of the computert simulations and the experimental, we found that the figure in this study is $-5.00\pm0.11$ kcal/mol and those of the computer simulations are $-5.40\pm1.9$, -5.5, and -5.4 kcal/mol. The experimental is -5.1 kcal/mol. There is good agreement among various studies, taking into account both methods used to obtain the hydration free energies and standard deviations. There is also good agreement between the calculated structural properties of this study and the simulations, ab initio and the experimental results. We have explained the deviation of the relationship between the free energy difference and the Onsager dielectric function of solvents by the electron pair donor properties of the solvents. For the $Rb^+$ and $K^+$ ion pair, the Onsager dielectric function of solvents (or solvent permittivity), donor number of solvent and the differences in solvation dominate the differences in the relative free energies of solvation and partition coefficients.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.12
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• pp.626-633
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• 2004

In this paper, we present a time domain combined field integral equation (TD-CFIE) formulation to analyze the transient electromagnetic response from three-dimensional dielectric objects. The solution method in this paper is based on the method of moments (MoM) that involves separate spatial and temporal testing procedures. A set of the RWG (Rao, Wilton, Glisson) functions Is used for spatial expansion of the equivalent electric and magnetic current densities and a combination of RWG and its orthogonal component is used as spatial testing. We also investigate spatial testing procedures for the TD-CFIE to select the proper testing functions that are derived from the Laguerre polynomials. These basis functions are also used for temporal testing. Use of this temporal expansion function characterizing the time variable enables one to handle the time derivative terms in the integral equation and decouples the space-time continuum in an analytic fashion. Numerical results computed by the proposed formulation are presented and compared with the solutions of the frequency domain combined field integral equation (FD-CFIE).