• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• 한국진공학회지
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• 제19권5호
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• pp.347-352
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• 2010

SiOC 박막의 유전상수를 서로 다른 2가지 방법을 사용하여 계산하고 그 차이점에 대하여 비교분석하였다. SiOC 박막의 유전장수는 전형적인 유전상수 측정법으로써 MIS 구조를 이용하여 C-V 측정법에 의하여 얻을 수 있으며, 또한 엘립소미터를 이용한 굴절률로부터 $n^2$을 구하는 방법이 있다. SiOC 박막의 유전상수는 쌍극자, 이온, 전자의 성분으로 이루어지며, 댁개 쌍극자 성분은 무시된다. 박막을 증착하는 동안 플라즈마에 의한 프리커서의 해리로부터 이온결합이 생성되면서 증착된다. 증착한 박막의 유전상수는 주로 이온결합 효과가 주를 이루었다. 열처리를 하면서 OH 수산기의 기화에 의해 유전상수는 감소되는데 이때 이온의 효과도 더불어 감소하게 된다. 상대적으로 무시되었던 전자에 의한 분극의 효과가 나타나면서 유전상수는 더욱 감소하였다. 하지만 물리 화학적 그리고 전기적으로 안정된 SiOC 박막은 이온과 전자에 의한 분극의 효과가 없어지는 무 분극성의 박막으로서 유전상수는 열처리한 박막에서 2.0 정도인 것으로 측정되었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.76-79
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• 2000

The 3$\mu\textrm{m}$-thick PVDF (Polyvinyiidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR specrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks ate detected at 509.45 and 1273.6〔cm〕 in the FT-IR spectrum, we are confirmed that the ${\beta}$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200Hz to 7000Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy (ΔH) obtained from temperature dependence of dielectric loss is 21.64 ㎉/㏖. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.241-245
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• 2012

The barrier rib on plasma display panel (PDP) is a typical 3D-patterned thick film with thickness of 120 ㎛ and it is hard to measure its dielectric constant in this state of the product. Because the porosity of ceramic thick film influenced the mechanical and dielectric characteristics, it was expected that there was the relationship between two properties. Therefore, the correlation analysis between porosity, hardness and dielectric constant of the barrier rib was studied and the exponential curve between porosity and hardness, and the quadratic curve between porosity and dielectric constant were drawn. The dielectric constant was well related to hardness by K400kHz = 0.5672 + 5.695 ln(Hv). The hardness was measured at five points on two real panels which sintered by two types of profiles and then dielectric constants and deviation were estimated by the above equation.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.43-47
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• 2001

Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.826-828
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• 2003

With a new PDP transparent dielectric layer formation technique, we were able to make dielectric layer with high transmittance by using dry film type dielectric material. We optimized dielectric pastes for dry film and they showed good process properties in lamination , drying and firing.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1444-1446
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• 2009

The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.