• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.386-389
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• 2004

This thesis complemented the weak points that the existing theses did not represented a phase characteristic as the equivalent circuit by applying 4-port simulation to DGS (Defected Ground Structure) characteristic and an equivalent circuit, which are the transmission line structure that has the defect made in the ground surface. We used a distribute device and a lumped device, obtained the equivalent circuit by applying the structure of balun to a discontinuous part. An indicated DGS (Defected Ground structure) is a dumbbells-shaped single defect, we indicated satisfying a magnitude and phase characteristics by applying this equivalent circuit.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.161-162
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.109-109
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• 2003

• Proceeding of Spring/Autumn Annual Conference of KHA
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• 2006.11a
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• pp.370-373
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• 2006

Lastly, the problem of filling occurs in the process of concealed joint of adjacent components and was seen in joints between the structure and an electrical or mechanical device. Therefore, the dry processing which replaces wet joint was seen in joints between the structure and a door, ones between the structure and a finishing materials, ones between a gypsum board and electrical device, and ones between a water pipe and a tile finishing. And a process of separating the area of jointed parts in order to eliminate the problem of overlap was seen in joints between a door and a finishing material and ones between a gypsum board on the ceiling and a light. Lastly, an analysis of a process of exposing concealed parts indicated that the problem of filling could be applied to joints between the structure and an electrical or mechanical device and ones between a finishing material and a mechanical device. This study sought out methods to apply Environment Friendly Multi Housing Remodeling that allow easy remodeling as part of environment- preserving policies. It also contains basic data useful to implement long-life houses in the future by presenting a comprehensive design standard for them

• Journal of Satellite, Information and Communications
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• v.8 no.4
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• pp.124-129
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• 2013

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, a modified NSCR_PPS device with counter pocket source(CPS) and partial p-type well(PPW) structure demonstrates highly latch-up immune current-voltage characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1014-1018
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• 2007

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.823-825
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• 2003

A sensor system was designed to measure real time vibro displacement of civil structure. The He-Ne laser is used for the displacement measuring method, because it guarantees short time stabilization, long time output power stability. Also, it guarantees simple maintenances and repairs under actual using condition. The line CCD image sensor(Tcd-142d) is used to detect the displacement of Ne-Ne laser responding to the vibro of civil structure. For accurate measurement and comparison, CDP-50 is used. Usually CDF-50 (Strain type displacement device) is used for the standard correction device of optical measurement equipments. The data processing part is consists of Optical sensor part, Wireless data transmission device, DAQp-1200, and LapView program. The displacement data of vibro from optical sensor part inputted to wireless data transmission device and then transmitted to DAQp-1200 in main control room. DAQp-1200 performs A/D conversion for the receiving data. After that the converted data inputted to computer system using LapView program for user display. The significance of this paper is to develope a convenient, accurate and lost saving real time displacement measurement system for the civil structure.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.49-57
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• 2010

This paper describes the design, construction, and fundamental testing of a precision rotational device that utilizes piezoelectric elements as a source of driving force and impact drive mechanism as a driving principle. A novel device structure is designed and the numerical simulations about the static displacement, stress distribution, and mode shape of the designed structure are performed. A fabricated rotational device has been rotated successfully by applying saw-shaped voltages to the piezoelectric elements. The one-step rotational angle was $0.44{\times}10^{-3}$ rad at the applied voltages of 80V. The angular velocities of the device were revealed to be increased as the driving frequency and voltage were respectively increased and the preload was decreased. The device has a feature that it can be translated as well as rotated. An experimental result shows that the device was translated by ${\pm}4.56{\mu}m$ maximum when the 120V sinusoidal voltages with a phase difference of $180^{\circ}$ were respectively supplied to two piezoelectric elements.