• 제목/요약/키워드: device simulations

검색결과 499건 처리시간 0.023초

Rudder Gap Cavitation Suppression Using Gap Flow Blocking Devices

  • Oh, Jung-Keun;Lee, Chang-Min;Lee, Hee-Bum;Rhee, Shin-Hyung;Suh, Jung-Chun;Kim, Hyo-Chul
    • Journal of Ship and Ocean Technology
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    • 제12권4호
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    • pp.20-31
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    • 2008
  • Development of rudder gap flow blocking device for lift augmentation and cavitation suppression is presented. In order to verify the performance of this device, cavitation visualization and surface pressure measurements were carried out in a cavitation tunnel. Numerical simulations were conducted using a computational fluid dynamics code for more rigorous verification. The new rudder system is equipped with cam devices, which effectively close the gap between the horn/pintle and movable wing parts. The experimental and computational results show that the proposed rudder system is superior to the conventional rudder systems in terms of the lift augmentation and cavitation suppression.

Characteristics of High Power Semiconductor Device Losses in 5MW class PMSG MV Wind Turbines

  • Kwon, Gookmin;Lee, Kihyun;Suh, Yongsug
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2014년도 전력전자학술대회 논문집
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    • pp.367-368
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    • 2014
  • This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.

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고내압용 MOS 구동 사이리스터 소자의 설계 및 전기적 특성에 관한 연구 (Study on Design and Electric Characteristics of MOS Controlled Thyristor for High Breakdown Voltage)

  • 홍영성;정헌석;정은식;강이구
    • 한국전기전자재료학회논문지
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    • 제24권10호
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    • pp.794-798
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    • 2011
  • This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

수리구조 개선을 통한 다중 펌프 흡수정에서 발생하는 보텍스 방지 대책 수립에 관한 연구 (Modifications to Hydraulic Structures for Anti-submerged Vortex in a Multi Pump Intake using CFD simulation Technique)

  • 박노석;김성수;정우창;김종오
    • 상하수도학회지
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    • 제25권1호
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    • pp.31-39
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    • 2011
  • In order to suggest the methodology for achieving anti-vortex device within multi pump intake well, CFD(Computational Fluid Dynamics) simulation were conducted for two alternative suggestions. Multi-intake sump model with anti-vortex device basins were designed and the characteristics of submerged vortex were investigated in the flow field by numerical simulation. From the results of simulations, to install the horizontal plate and vertical cross plates within basins were effective for preventing air-induction vortex.

A Study of Electromechanical Nanotube Memory Device using Molecular Dynamics

  • Lee Jun-Ha;Lee Hoong-Joo;Kwon Oh-Keun;Kang Jeong-Won
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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    • pp.27-30
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    • 2005
  • A nanoelectromechanical (NEM) switching device based on carbon nanotube (CNT) was investigated using atomistic simulations. The model schematics for a CNT based three-terminal NEM switching device fabrication were presented. for the CNT-based three-terminal NEM switch, the interactions between the CNT-lever and the drain electrode or the substrate were very important. When the electrostatic force applied to the CNT-lever was the critical point, the CNT-lever was rapidly bent because of the attractive foroe between the CNT-lever and the drain. The energy curves for the pull-in and the pull-out processes showed the hysteresis loop that was induced by the adhesion of the CNT on the copper, which was the interatomic interaction between the CNT and the copper.

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플래시메모리소자의 구조에 대한 열적 데이터 삭제 효율성 비교 (Comparison of Efficiency of Flash Memory Device Structure in Electro-Thermal Erasing Configuration)

  • 김유정;이승은;이광선;박준영
    • 한국전기전자재료학회논문지
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    • 제35권5호
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    • pp.452-458
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    • 2022
  • The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.

Cr- 및 Ni- 소스/드레인 쇼트키 박막 트랜지스터의 장벽 특성에 대한 실험 및 모델링 연구 (Experimental and Simulation Study of Barrier Properties in Schottky Barrier Thin-Film Transistors with Cr- and Ni- Source/Drain Contacts)

  • 정지철;문경숙;구상모
    • 한국전기전자재료학회논문지
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    • 제23권10호
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    • pp.763-766
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    • 2010
  • By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

확률론에 기반한 점자블록 추종 알고리즘 및 센서장치의 개발 (Development of Sensor Device and Probability-based Algorithm for Braille-block Tracking)

  • 노치원;이성하;강성철;홍석교
    • 제어로봇시스템학회논문지
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    • 제13권3호
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    • pp.249-255
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    • 2007
  • Under the situation of a fire, it is difficult for a rescue robot to use sensors such as vision sensor, ultrasonic sensor or laser distance sensor because of diffusion, refraction or block of light and sound by dense smoke. But, braille blocks that are installed for the visaully impaired at public places such as subway stations can be used as a map for autonomous mobile robot's localization and navigation. In this paper, we developed a laser sensor stan device which can detect braille blcoks in spite of dense smoke and integrated the device to the robot developed to carry out rescue mission in various hazardous disaster areas at KIST. We implemented MCL algorithm for robot's attitude estimation according to the scanned data and transformed a braille block map to a topological map and designed a nonlinear path tracking controller for autonomous navigation. From various simulations and experiments, we could verify that the developed laser sensor device and the proposed localization method are effective to autonomous tracking of braille blocks and the autonomous navigation robot system can be used for rescue under fire.

새로운 측정장비를 이용한 병렬구조 로봇의 보정에 관한 (Calibration of Parallel Manipulators using a New Measurement Device)

  • 압둘라우프;김성관;류제하
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 추계학술대회
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    • pp.1494-1499
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    • 2003
  • Kinematic calibration is a process whereby the actual values of geometric parameters are estimated so as to minimize the error in absolute positioning. Measuring all components of Cartesian posture, particularly the orientation, can be difficult. With partial pose measurements, all parameters may not be identifiable. This paper proposes a new device that can be used to identify all kinematic parameters with partial pose measurements. Study is performed for a six degree-of-freedom fully parallel Hexa Slide manipulator. The device, however, is general and can be used for other parallel manipulators. The proposed device consists of a link with U joints on both sides and is equipped with a rotary sensor and a biaxial inclinometer. When attached between the base and the mobile platform, the device restricts the end-effector's motion to five degree-of-freedom and can measure position of the end-effector and one of its rotations. Numerical analyses of the identification Jacobian reveal that all parameters are identifiable. Computer simulations show that the identification is robust for the errors in the initial guess and the measurement noise.

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기지국 협력 Device-to-Device 통신 전송 프로토콜 연구 (Transmission Protocol for Cellular-Aided Device-to-Device Communication)

  • 전상운;최상원;김주엽;신원용
    • 한국통신학회논문지
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    • 제41권11호
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    • pp.1619-1629
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    • 2016
  • 본 논문은 기지국 협력이 가능한 Device-to-Device 통신 모델에서의 효율적인 전송 프로토콜에 대해 연구하였다. 두 개의 직접통신 송수신단 쌍이 기지국의 상향링크, 하향링크 통신채널을 활용하여 독립적인 메시지를 전송하는 모델에 대해 고려하였다. 제안기법의 경우, 첫 번째 단계에서 송신단은 메시지를 전송하고 기지국과 수신단은 이를 수신하게 된다. 두 번째 단계에서 기지국은 메시지의 XOR를 수신단에게 전송하여 최종적으로 수신단은 첫 번째 단계에서 수신한 신호와 두 번째 단계에서 수신한 신호를 통하여 자신의 메시지를 복원하게 된다. 기존의 직접 통신의 경우, 자신의 메시지 디코팅에 실패하면 아웃티지가 발생하지만, 제안기법의 경우 첫 번째 단계에서 두 메시지 중 하나만 디코딩이 가능하면 두 번째 단계에서 수신한 메시지의 XOR를 통해 자신의 메시지를 복원 가능하다. 본 논문은 제안기법의 아웃티지 기반 전송율을 분석하고 또한 모의실험을 통하여 제안기법이 기존 기법 대비 아웃티지 성능을 향상시킬 수 있음을 보였다.