• Progress in Medical Physics
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• v.33 no.1
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• pp.1-9
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• 2022

Purpose: To evaluate the effective volume of the Korea Research Institute of Standards and Science free air chamber (KRISS FAC) L1 used for the primary standard device of the low-energy X-ray air kerma. Methods: The mechanical dimensions were measured using a 3-dimensional coordinate measuring machine (3-d CMM, Model UMM 500, Carl Zeiss). The diameter of the diaphragm was measured by a ring gauge calibrator (Model KRISS-DM1, KRISS). The elongation of the collector length due to electric field distortion was determined from the capacitance measurement of the KRISS FAC considering the result of the finite element method (FEM) analysis using the code QuickField v6.4. Results: The measured length of the collector was 15.8003±0.0014 mm with a 68% confidence level (k=1). The aperture diameter of the diaphragm was 10.0021±0.0002 mm (k=1). The mechanical measurement volume of the KRISS FAC L1 was 1.2415±0.0006 cm³ (k=1). The elongated length of the collector due to the electric field distortion was 0.170±0.021 mm. Considering the elongated length, the effective measurement volume of the KRISS FAC L1 was 1.2548±0.0019 cm³(k=1). Conclusions: The effective volume of the KRISS FAC L1 was determined from the mechanically measured value by adding the elongated volume due to the electric field distortion in the FAC. The effective volume will replace the existing mechanically determined volume in establishing and maintaining the primary standard of the low-energy X-ray.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.1
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• pp.97-101
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• 2016

ZnO has nanostructured material because of unique properties suitable for various applications. Amongst all chemical and physics methods of synthesis of ZnO nanostructure, the hydrothermal method is attractive for its simplicity and environment friendly condition. Nanostructure ZnO thin films have been successfully synthesized on fluorine doped tin oxide (FTO) substrate using hydrothermal method. A possible growth mechanism of the various nanostructures ZnO is discussed in schematics. The prepared materials were characterized by standard analytical techniques, i.e., X-ray diffraction (XRD) and Field-emission scanning electron microscopy (SEM). The XRD study showed that the obtained ZnO nanostructure thin films are in crystalline nature with hexagonal wurtzite phase. The SEM image shows substrate surface covered with nanostructure ZnO nanrod. The UV-vis absorption spectrum of the synthesized nanostructure ZnO shows a strong excitonic absorption band at 365 nm which indicate formation nanostructure ZnO thin film. Photoluminescence spectra illustrated two emission peaks, with the first one at 424 nm due to the band edge emission of ZnO and the second broad peak centered around 500 nm possibly due to oxygen vacancies in nanostructure ZnO. The Raman measurements peaks observed at $325cm^{-1}$, $418cm^{-1}$, $518cm^{-1}$ and $584cm^{-1}$ indicated that nanostrusture ZnO thin film is high crystalline quality. We trust that nanostructure ZnO material can be effectively will be used as a highly active and stable phtocatalysis application.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.287-291
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• 2005

We have investigated and tried to improve the characteristics of the thin $HfO_2$ layer deposited by ALD for fabricating a MOSFET device where the $HfO_2$ film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the $HfO_2$ dielectric layer with thickness of $5\~6\;nm$ has been deposited. Then the $HfO_2$ film was annealed with $1\~20\;atm\;H_2$ gas and subsequently aluminum electrodes was made so that the active area was $5{\times}10^{-5}\;cm^2$. We have found out that the drain current and transconductance increased by $5\~10\%$ when the $H_2$ gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.89-92
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• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

• 한국HCI학회:학술대회논문집
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• 2008.02a
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• pp.224-229
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• 2008

In this paper, we propose an object control system on table top display to support augmented reality in which objects in real-world control computer-generated data. We developed LED-based object control system over table top display so that it is capable of controlling networked table top display. The LED-based object control system supports more natural interactive interface. In this paper, infrared LED is used to implement the object control device to be recognised by table top display. We applied LED-based object control system in air hockey game where a team has a point if their puck goes to opponent's net on a table. Since users can control objects in cyber world with the proposed object control device, it is realized augmented reality.

• Smart Structures and Systems
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• v.16 no.2
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• pp.281-294
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• 2015

Bolted joint connection is the most commonly used connection element in structures and devices. The loosening due to external dynamic loads cannot be observed and measured easily and may cause catastrophic loss especially in an extreme requirement and/or environment. In this paper, an innovative Real-time Cross-Correlation Method (RCCM) for monitoring of the bolted joint loosening was proposed. We apply time reversal process on stress wave propagation to obtain correlation signal. The correlation signal's peak amplitude represents the cross-correlation between the loosening state and the baseline working state; therefore, it can detect the state of loosening. Since the bolt states are uncorrelated with noise, the peak amplitude will not be affected by noise and disturbance while it increases SNR level and increases the measured signals' reliability. The correlation process is carried out online through physical wave propagation without any other post offline complicated analyses and calculations. We implemented the proposed RCCM on a single bolt/nut joint experimental device to quantitatively detect the loosening states successfully. After that we implemented the proposed method on a real large structure (reaction wall) with multiple bolted joint connections. Loosening indexes were built for both experiments to indicate the loosening states. Finally, we demonstrated the proposed method's great anti-noise and/or disturbance ability. In the instrumentation, we simply mounted Lead Zirconium Titanate (PZT) patches on the device/structure surface without any modifications of the bolted connection. The low-cost PZTs used as actuators and sensors for active sensing are easily extended to a sensing network for large scale bolted joint network monitoring.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.153-165
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• 1995

The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.

• Journal of Yeungnam Medical Science
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• v.39 no.2
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• pp.108-115
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• 2022

Background: This study was aimed at comparing and analyzing the results of FractionLab (Varian/Mobius Medical System) with those of portal dosimetry that uses an electronic portal imaging device. Portal dosimetry is extensively used for patient-specific quality assurance (QA) in intensity-modulated radiotherapy (IMRT). Methods: The study includes 29 patients who underwent IMRT on a Novalis-Tx linear accelerator (Varian Medical System and Brain-LAB) between June 2019 and March 2021. We analyzed the multileaf collimator DynaLog files generated after portal dosimetry to evaluate the same condition using FractionLab. The results of the recently launched FractionLab at various gamma indices (0.1%/0.1 mm-1%/1 mm) are analyzed and compared with those of portal dosimetry (3%/3 mm). Results: The average gamma passing rates of portal dosimetry (3%/3 mm) and FractionLab are 98.1% (95.5%-100%) and 97.5% (92.3%-99.7%) at 0.6%/0.6 mm, respectively. The results of portal dosimetry (3%/3 mm) are statistically comparable with the QA results of FractionLab (0.6%/0.6 mm-0.9%/0.9 mm). Conclusion: This paper presents the clinical performance of FractionLab by the comparison of the QA results of FractionLab using portal dosimetry with various gamma indexes when performing patient-specific QA in IMRT treatment. Further, the appropriate gamma index when performing patient-specific QA with FractionLab is provided.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.270-275
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• 2013

Single-layer graphene layers have been synthesized by using chemical vapor deposition, subsequently transferred on 300 nm $SiO_2/Si$ and quartz substrates, and doped with $AuCl_3$ by spin coating for various doping concentrations ($n_D$) from 1 to 10 mM. Based on the $n_D$-dependent variations of Raman frequencies/peak-intensity ratios, sheet resistance, work function, and Dirac point, measured by structural, optical, and electrical analysis techniques, the p-type nature of graphene is shown to be strengthened with increasing $n_D$. Especially, as estimated from the drain current-gate voltage curves of graphene field effect transistors, the hole mobility is very little varied with increasing $n_D$, in strong contrast with the $n_D$-dependent large variation of electron mobility. These results suggest that $AuCl_3$ is one of the best p-type dopants for graphene and is promising for device applications of the doped graphene.