• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.436-437
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indum-tin oxide (ITO) anodes using $O_2$ gas and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $O_2$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/Alq3/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $O_2$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The impedance spectroscopy measurement of the devices with the $O_2$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.371-376
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• 2007

We have investigated the lasing characteristics of the InGaAs quantum dot laser diode (QD-LD) and InGaAs quantum well laser diode (QW-LD) operated at the 980 nm wavelength range. The 980-nm lasers are used as a pumping source for a erbium-doped fiber amplifier (EDFA) and it shows high efficiency in long-haul optical fiber network. We have compared the threshold current density, the characteristic temperature, the optical power and the internal efficiency of QD-LD and QW-LD under a pulsed current condition. The QD-LD shows superior performances to the QW-LD. Further optimization of a LD structure is expected to the superior performances of a QD-LD.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• Journal of Internet Computing and Services
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• v.15 no.1
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• pp.171-178
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• 2014

This paper presents dynamic modelling of a virtual object in augmented reality environments when external forces are applied to the object in real-time fashion. In order to simulate a natural behavior of the object we employ the theory of Newtonian physics to construct motion equation of the object according to the varying external forces applied to the AR object. In dynamic modelling process, the physical interaction is taken placed between the augmented object and the physical object such as a haptic input device and the external forces are transferred to the object. The intrinsic properties of the augmented object are either rigid or elastically deformable (non-rigid) model. In case of the rigid object, the dynamic motion of the object is simulated when the augmented object is collided with by the haptic stick by considering linear momentum or angular momentum. In the case of the non-rigid object, the physics-based simulation approach is adopted since the elastically deformable models respond in a natural way to the external or internal forces and constraints. Depending on the characteristics of force caused by a user through a haptic interface and model's intrinsic properties, the virtual elastic object in AR is deformed naturally. In the simulation, we exploit standard mass-spring damper differential equation so called Newton's second law of motion to model deformable objects. From the experiments, we can successfully visualize the behavior of a virtual objects in AR based on the theorem of physics when the haptic device interact with the rigid or non-rigid virtual object.

• Journal of Radiation Protection and Research
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• v.36 no.3
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• pp.134-139
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• 2011

In this research, we developed the newly cloud chamber apparatus by using Peltier device to apply nuclear physics experiment in high school or university. We observed the cosmic rays track by using the developed apparatus and a camcorder. And we compared and analyzed the acquired data. From the results, we acquired the following conclusions and suggestions : First, it is very difficult to observe the cosmic rays track in the typical cloud chamber because of the low frequency of it. But in the newly developed cloud chamber we can observe easily the cosmic rays track owing to the high frequency of it. Second, when we do the experiment with the newly developed apparatus, we found that the cosmic rays track happens well under the condition that the temperature of the upper place of cooling plate must be below 5$^{\circ}C$ with more than isopropanol $1.04{\times}10^{-5}$ $ml{\cdot}mm^{-3}$. Third, the newly developed apparatus will be improved to have better precision by controling the temperature of cooling plate in the cloud chamber by current intensity. Therefore we think that it is very useful to use the newly developed apparatus in the nuclear physics experiment in highschool or university.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Korean Journal of Optics and Photonics
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• v.21 no.5
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• pp.190-194
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• 2010

A hybrid grating sensing device based on a side-polished fiber Bragg grating (FBG) with a polymer overlay is proposed for simultaneous measurement of external refractive index and temperature. The side-polished FBG, which is insensitive to ambient index change, is utilized for detecting temperature variation, and the polymer overlay is coated on the side-polished FBG for measurement of ambient index change. The temperature sensitivities of the side-polished FBG and the polymer overlay were measured to be 0.01 nm/$^{\circ}C$ and -0.58 nm/$^{\circ}C$, respectively, in a temperature range from $30^{\circ}C$ to $100^{\circ}C$. The ambient index sensitivities of the polymer overlay were measured to be 498.8 nm/RIU in an ambient index range from 1.33 to 1.39, 694.9 nm/RIU from 1.39 to 1.42, and 1312 nm/RIU from 1.42 to 1.44.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.848-853
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• 2010

We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of $880^{\circ}C$, growth time of 30 min, TMG source flow rate of 10 sccm have resulted in dense nanowires on the surface, however further increase of growth time or TMG flow rate has not increased the length of nanowire but has formed nanocrystals. On the contrary, the increase of ammonia flow has increased the length of nanowires and the coverage of nanowire over the surface. The shape of nanowire is needle-like with a Ni droplet at its tip; the length is tens of micron with more than 40 nm in diameter. Low temperature photoluminescence obtained from the sample at optimum growth condition has revealed several peaks related to exciton decay near band-edge, but does not show any characteristic originated from one dimensional quantum confinement. Strong and broad luminescence at 2.2 eV is observed from dense nanowire samples and this suggests that the broad band is related to e-h recombination at the surface state in a nanowire. The current result is implemented to the nanowire device fabrication by nanowire bridging between micro-patterned neighboring Ni catalysis islands.