• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.207-210
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• 2001

Electrical equipment for railway is always experiencing wear and degradation by mechanical, electrical and environmental stress in service and the fault or the accident of high voltage main circuit directly causes operation interruption. Particularly propulsion drive of high speed switching inverter takes the form of specific degradation mechanism such as fast rising transient surge, reflective overvoltage and harmonic stress, and it is known that it threatens the long life and the reliability of electrical equipment. In this paper, statistics of fault and accident on main electrical equipment for railway are presented and also insulation degradation mechanism, which governs end life of electrical device, is analyzed. Finally the method of fault respondence and reliability improvement on the main electrical equipments will be reviewed in order to prevent operation interruption.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.427-430
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• 2001

The degradation characteristics versus MgO Additive for the ZnO ceramic devices fabricated by the standard ceramic techniques is investigated in this study. It were made these devices be basic Matsuoka's composition. Especially, MgO were added to analyze the degradation characteristics and sintered in air at 1300$^{\circ}C$. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. The elemental analysis in the microstructures was used by EDS, E-J analysis was used to determine ${\alpha}$ . Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.

• 전자공학회논문지A
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• 제31A권1호
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• pp.77-83
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• 1994

Characteristics of hot-electron-induced degradation by AC, DC was investigated for p-MOSFET's(W/L=25/l$\mu$m) with sub-10nm RTP-CVD gate oxides. It was confirmed that the surface channel p-MOSFET of a thinner gate oxide shows less degradation. Mechanisms for this effect were analyzed using a simple MOS Device degradation model. It was found that the number of generated electron traps(fixed charge) is determined by the amount of peak gate current, dependent of the gate oxide thickness, and the major cause of the smaller degradation in the thinner gate oxide devices is the lower hot electron trapping carriers.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.687-690
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• 2003

Experimental results are presented for gate oxide degradation and its effect on device parameters under negative and positive bias stress conditions using NMOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both hole- and electron-trapping are found to dominate the reliability of gate oxide. However, with changing gate voltage polarity, the degradation becomes dominated by electron trapping. Statistical parameter variations as well as the "OFF" leakage current depend on those charge trapping. Our results therefore show that Si or O bond breakage by electron can be another origin of the investigated gate oxide degradation.gradation.

• 한국세라믹학회지
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• 제49권1호
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• pp.48-55
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• 2012

Degradation of performance and life time of a functional material or device thereof is induced, to a great extent, by mass transfer in the material that is driven by various thermodynamic forces imposed intentionally or accidentally during its operation or service. The forces are any gradient of intensive thermodynamic variables, component chemical potentials, electrical potential, temperature, stresses, and the like. This paper reviews electric-field induced degradation phenomena in ionic solid compounds including insulation resistance degradation, crystal shift, microstructural alterations, compositional unmixing, and compound decomposition. Their inner workings are also discussed qualitatively.

• 대한임베디드공학회논문지
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• 제7권3호
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• pp.151-156
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• 2012

When mounting the sensor device in the way of Plug&Play, sensor device drivers need to be loaded and linked dynamically. Since a sensor node platform is based on small 8 bit MCU, dynamic loading and linking technique used in Windows and Linux can not be applied. In this paper, we present how to link and load dynamically sensor device drivers for sensor device Plug&Play. We implement a prototype and evaluate it to make sure that there is no performance degradation like sensor device driver connection speed and memory usage. Connection speed overhead increases to 0.2ms. Memory usage overhead increases to hundreds byte. It shows that there is no heavy influence in running the actual program.

• 한국컴퓨터정보학회논문지
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• 제22권4호
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• pp.1-8
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• 2017

In this paper, we propose a fault isolation system for device drivers of the Linux operating system. High availability systems impose stringent requirements upon Linux operating system. Especially device drivers can be a major source of operating system instability and many times contribute to system degradation and outages. The proposed fault isolation system identifies the occurrence of the memory-related faults in device driver and isolates it from the kernel. By operating at the early stage of the page fault handler in Linux kernel, the system detects which module causes fault and isolates it transparently from the remaining part of the kernel. By experiments, we show that the proposed system efficiently detects faults incurred by device driver, isolates the device driver and the process which accessed the driver module from the kernel.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.970-973
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• 1999

When the size of the device is decreased, the hot carrier degradation presents a severe problem for long-term device reliability. In this paper we fabricated & tested the 0.26${\mu}{\textrm}{m}$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve and charge trapping using the Hp4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially a hot carrier lifetime(nitride oxide gate device satisfied 30years, but the lifetime of wet gate oxide was only 0.1year), variation of Vg, charge to breakdown and charge trapping etc.

• 품질경영학회지
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• 제38권4호
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• pp.504-511
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• 2010

A fuze detonator comprising star shells is an important device so that its failure usually leads to failure of the shells. In this paper, accelerated degradation tests of RD1333 (lead azide) using temperature stress were performed, and then degradation data of explosive power for the detonator were analyzed to predict the storage lifetime of detonator. Degradation data analysis to estimate the storage lifetime is based on a distribution-based degradation process. Statistical distribution parameters of explosive power degradation measures at each time were estimated for each temperature level, and then reliability of the detonator for each accelerated temperature level was estimated using both time-varying distribution parameters and critical level of explosive power. Arrhenius model was applied to estimate storage lifetime of the detonator under the field temperature condition. Accelerated distribution-based degradation analysis to estimate storage lifetime is explained in detail, and estimation results are compared to field data of storage lifetime in this paper.

• Tribology and Lubricants
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• 제35권3호
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• pp.151-157
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• 2019

Insulated oil degradation produces charged by-products, such as acids and hydro-peroxides, which tend to reduce the insulating properties of the oil. In this study, UV-vis spectroscopy measurement technology is developed and experimentally compared with other measurement methods, such as the titration method and IR spectroscopy, to validate its ability to monitor the degradation of electrical insulating paper. The degradation characteristics of the insulating paper are appropriately represented through various types of measurement methods, such as the Tan (delta) method, $CO_2$ gas production measurement, the titration method, and IR spectroscopy. The results are demonstrated to be well comparable to a change in the fluorescence emission ratio (FER), which is defined as the shift in fluorescence intensity in the measured wavelength range, and also to the chromatic ratio, which is defined as a color shift to longer wavelength ranges. The results also show that, by using UV-vis spectroscopy, it is possible to detect the degradation of the insulating paper. This study suggests that UV-vis spectroscopy can be applied as an alternative to high-performance liquid chromatography, which is the internationally recognized measurement technology for cellulose paper degradation. The FER detector is also verified to be useful as an effective condition-monitoring device for power transformers.