• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.33-36
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• 2002

MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had $I_{dss}$=200 ㎃/mm, maximum transconductance of 12 ㎳/mm at Vrs=-4 V, V, Is=27 V. Thc device had an fT of 2.5 GHz and $f_{mdx}$ of 13.3 GHz at $V_{ds}$ =27 V and $V_{g}$=-4 V. The fabrication and characterization of this device are discussed.d.d.d.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2003년도 추계학술발표대회 논문집
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• pp.7-10
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• 2003

Blue-light-emitting peiymer/dielectric nanolayer nanocomposites were prepared by the solution intercalation method and employed in electroluminescent device. Their photoluminescence and electroluminescence characteristics suggested that the nanolayers isolate the polymer chains and hinder the formation of excimers and aggregates. By reducing the excimer formation and its deleterious effects on emission efficiency, both the color purity and the luminescence stability were improved. Furthermore, the dielectric nanolayers have an aspect ratio of about 500 and therefore act as efficient barriers to oxygen and moisture diffusion, which produced a dramatic increase in the device stability.

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2415-2418
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• 2014

In this report, the contact resistance between "electrode" and "lead" is investigated for reasonable measurements of samples' resistance in a polypyrrole (PPy) nanowire device. The sample's resistance, including "electrode-lead" contact resistance, shows a decrease as force applied to the interface increases. Moreover, the sample's resistance becomes reasonably similar to, or lower than, values calculated by resistivity of PPy reported in previous studies. The decrease of electrode-lead contact resistance by increasing the applying force was analyzed by using Holm theory: the general equation of relation between contact resistance ($R_H$) of two-metal thin films and contact force ($R_H{\propto}1/\sqrt{F}$). The present investigation can guide a reliable way to minimize electrode-lead contact resistance for reasonable characterization of nanomaterials in a microelectrode device; 80% of the maximum applying force to the junction without deformation of the apparatus shows reasonable values without experimental error.

• Applied Microscopy
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• 제45권2호
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• pp.89-94
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• 2015

This article briefly reviews the results of recently reported research on high-temperature Pb-free solder alloys and the research trend for characterization of the interfacial reaction layer. To improve the product reliability of high-temperature Pb-free solder alloys, thorough research is necessary not only to enhance the alloy properties but also to characterize and understand the interfacial reaction occurring during and after the bonding process. Transmission electron microscopy analysis is expected to play an important role in the development of high-temperature solders by providing accurate and reliable data with a high spatial resolution and facilitating understanding of the interfacial reaction at the solder joint.

• 전자공학회논문지A
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• 제31A권9호
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• pp.114-120
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• 1994

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 1998년도 가을 학술발표논문집 Vol.25 No.2 (2)
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• pp.494-496
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• 1998

디지털 이미징(Digital Imaging) 분야에서 칼라 스캐너와 칼라 디지털 카메라와 같은 입력 장비들을 통하여 획득된 디지털 이미지는 장비 의존적인(Device Dependent) RGB칼라값으로 표현된다. 이러한 장비 의존적인 디지털 칼라 이미지는 인간 시각 체계의 칼라 인지 능력과 일치하지 않으므로 왜곡된 칼라를 제공하게 된다. 이러한 문제를 해결하기 위해서 장비 의존적인 RGB 칼라값을 장비 독립적인(Device Independent) XYZ 칼라값으로 변환하는 다양한 연구가 수행중이다[1-3]. 그러나, 이러한 연구 방법들은 서로 다른 Reflectance 값을 가지는 두 칼라가 특정한 환경하에서 동일한 XYZ 칼라값을 가지고, 또 다른 환경하에서 서로 다른 XYZ 칼라값을 가지는 Metamerism 문제를 해결할 수 없다. 본 논문은 이러한 Metamerism 문제를 해결하기 RGB 칼라값을 Reflectance 값으로 변환하였고, 기존의 연구 결과와 비교하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.353-356
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• 2005

We have characterized the mechanical stability of the Pixel-Isolated Liquid Crystal (PILC) mode for plastic LC display applications. In our device, the LC molecules are fully isolated in the pixels by the phase-separated polymer walls. The experimental results of microscopic observation and electro-optic characterization show that our flexible PILC device has good mechanical stability against external point pressure or bending distortion due to the polymer walls in our structure.