• Journal of the Korean Society of Hazard Mitigation
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• v.7 no.4
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• pp.19-29
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• 2007

This study compares various ground-truth designs of radar rainfall using rain-gauge data sets from Korea Meteorological Administration (KMA), AWS and Ministry of Construction and Transportation (MOCT). These Rain-gauge data sets and the Mt. Gwanak radar rainfall data for the same period were compared, and then the differences between two observed rainfall were evaluated with respect to the amount of bias. Additionally this study investigated possible differences in bias due to different storm characteristics. The application results showed no distinct differences between biases from three rain-gauge data sets, but some differences in their statistical characteristics. In overall, the design bias from MOCT was estimated to be the smallest among the three rain-gauge data sets. Among three storm events considered, the jangma with the highest spatial intermittency showed the smallest bias.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.2
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• pp.291-299
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• 2004

DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Journal of Fashion Business
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• v.14 no.2
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• pp.73-80
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• 2010

This research examined the design characteristics of Madeleine Vionnet, a female fashion designer who left an enormous legacy and made a great contribution to the high added-value fashion industry. Her techniques can be dividing in to three types: the bias cutting, the design by geometrical methods, and the classical style of ancient Greek clothing. This research also intended to study the design cases in which Vionnet's drapery images are applied to modern fashion, mainly the haute couture works that have appeared at Dior collections since 2000. In terms of the characteristics of Madeleine Vionnet's design, First, she produced the best achievement in dress and ornament history by developing a new technique called bias cutting. Second, her work was groundbreaking because it changed the previously planar approach to the female body into a solid conception by cutting and connecting geometrical pieces in the form of quadrangle, triangle, and a quarter-circle. As a result, her works depicted feminine beauty to the fullest extent through the combination of the human body, excellent materials, and the most sophisticated technology and personal skill. Third, her approach was a classical style tinged with the Greek costume image. With this style, which was born by reinterpreting the key tone of the Greek epoch in a modern way, and transcending and even changing tradition, she created a form of beauty that only she could.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.403-408
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• 2008

In this paper, the high efficiency and linearity Doherty power amplifier using DGS and adaptive bias technique has been designed and realized for 2.3GHz WiBro applications. The Doherty amplifier has been implemented us-ing silicon MRF 281 LDMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with DGS and adaptive bias technique has been 36.6% at 34.01dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.89-90
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• 2007

In this paper, we propose Doherty amplifier with proper drain bias line. By $\lambda$/4 microstrip line, IMD is eliminated. Also output power of amplifier is reduced in wanted bandwidth. For linearity improvement, we design drain bias with narrow $\lambda$/4 microstrip line. We observe that gain characteristics improve 1dB and $3^{rd}/5^{th}$ IMD characteristics reduce 5dB/10dB.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2001.05a
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• pp.69-72
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• 2001

In this paper, we propose a new design method for bidirectional associative memories model with high error correction ratio. We extend the conventional GBAM model using bias terms and formulate a design procedure in the form of a constrained optimization problem. The constrained optimization problem is then transformed into a GEVP(generalized eigenvalue problem), which can be efficiently solved by recently developed interior point methods. The effectiveness of the proposed approach is illustrated by a example.

• Journal of the Korean Geotechnical Society
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• v.35 no.6
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• pp.17-26
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• 2019

In this study, the statistical characteristics of the resistance bias factors were analyzed using a high-quality field load test database, and the total resistance bias factors were estimated considering the soil uncertainty and construction errors for the application of the limit state design of aggregate pier foundation. The MLR model by Bong and Kim (2017), which has a higher prediction performance than the previous models was used for estimating the resistance bias factors, and its suitability was evaluated. The chi-square goodness of fit test was performed to estimate the probability distribution of the resistance bias factors, and the normal distribution was found to be most suitable. The total variability in the nominal resistance was estimated including the uncertainty of undrained shear strength and construction errors that can occur during the aggregate pier construction. Finally, the probability distribution of the total resistance bias factors is shown to follow a log-normal distribution. The parameters of the probability distribution according to the coefficient of variation of total resistance bias factors were estimated by Monte Carlo simulation, and their regression equations were proposed for simple application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.9
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• pp.924-931
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• 2002

In this paper, a new λ/4 bias transmission line that is added dumbbell-shaped defected ground structure(DGS) on ground plane of the conventional λ/4 bias transmission line is proposed. This DGS λ/4 bias transmission line maintains high characteristic impedance, but physical width is wider and length is shorter than that of the conventional bias line. If the proposed bias line is attached on signal transmission line, this bias line can reduces the $3^{rd}$ harmonic signal as well as the$2^{nd}$ harmonic signal. With harmonic reduction characteristics, efficiency and linearity of amplifier are improved. The proposed bias line is adopted in power amplifier on IMT-2000 base-station transmitting band. This paper presents several simulations and experimental results of DGS to show validity of the proposed power amplifier using the new λ/4 bias transmission line. Experimental results represent that the $3^{rd}$ harmonic signal is reduced about 26.5 dB and efficiency is improved about 9.1 % and IMD3 is improved 4.5 dB than the conventional structure.

• The tire
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• s.26
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• pp.17-21
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• 1970