• 제목/요약/키워드: depth profiles

검색결과 527건 처리시간 0.034초

Conversion from SIMS depth profiling to compositional depth profiling of multi-layer films

  • Jang, Jong-Shik;Hwang, Hye-Hyen;Kang, Hee-Jae;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.347-347
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    • 2011
  • Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

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VitalBeam 선형가속기의 심부선량백분율과 측방선량분포 측정을 위한 새로운 기준 전리함으로서 스텔스 전리함의 성능 평가 (Performance Evaluation of Stealth Chamber as a Novel Reference Chamber for Measuring Percentage Depth Dose and Profile of VitalBeam Linear Accelerator)

  • 김연래;정진범;강성희;강상원;김경현;정재용;신영주;서태석;이정우
    • 대한방사선기술학회지:방사선기술과학
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    • 제41권3호
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    • pp.201-207
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    • 2018
  • The purpose of this study is to evaluate the performance of a "stealth chamber" as a novel reference chamber for measuring percentage depth dose (PDD) and profile of 6, 8 and 10 MV photon energies. The PDD curves and dose profiles with fields ranging from $3{\times}3$ to $25{\times}25cm^2$ were acquired from measurements by using the stealth chamber and CC 13 chamber as reference chamber. All measurements were performed with Varian VitalBeam linear accelerator. In order to assess the performance of stealth chamber, PDD curves and profiles measured with stealth chamber were compared with measurement data using CC13 chamber. For PPDs measured with both chambers, the dosimetric parameters such as $d_{max}$ (depth of maximum dose), $D_{50}$ (PDD at 50 mm depth), and $D_{100}$ (PDD at 100 mm depth) were analyzed. Moreover, root mean square error (RMSE) values for profiles at $d_{max}$ and 100 mm depth were evaluated. The measured PDDs and profiles between the stealth chamber and CC13 chamber as reference detector had almost comparable. For PDDs, the evaluated dosimetric parameters were observed small difference (<1%) for all energies and field sizes, except for $d_{max}$ less than 2 mm. In addition, the difference of RMSEs for profiles at $d_{max}$ and 100 mm depth was similar for both chambers. This study confirmed that the use of stealth chamber for measuring commission beam data is a feasible as reference chamber for fields ranging from $3{\times}3$ to $20{\times}20cm^2$. Furthermore, it has an advantage with respect to measurement of the small fields (less than $3{\times}3cm^2$ field) although not performed in this study.

얕은 심도 전단파속도 분포를 이용한 30m 심도 평균 전단파속도의 결정 (Determination of Mean Shear Wave Velocity to the Depth of 30m Based on Shallow Shear Wave Velocity Profile)

  • 선창국;정충기;김동수
    • 한국지진공학회논문집
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    • 제11권1호
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    • pp.45-57
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    • 2007
  • 미국 서부 지역을 근간으로 도출된 30m 심도까지의 평균 전단파속도(Vs30)는 부지 증폭 정도에 따른 설계 지진 지반 운동 결정을 위한 현행 지반 분류 기준이다. 부지의 Vs30을 산정하기 위해서는 현장탄성파 시험으로부터 적어도 30m 심도까지의 전단파 속도(Vs) 분포를 획득해야 한다. 그러나 많은 경우에서 현장의 불리한 여건 및 적용 시험 기법의 제한으로 인해 Vs분포 결정 심도가 30m에 이르지 못할 수 있다. 본 연구에서는 국내 총 72개소 부지들에서 다양한 탄성파 시험 수행을 통해 30m 이상 심도까지 Vs 분포를 획득하여 Vs30과 30m보다 얕은 심도까지의 평균 전단파속도(VsDs)들을 산정하고, 이로부터 Vs30과 VsDs간의 상관관계를 도출하였다. 또한, 모든 Vs 분포 자료의 평균에 근거한 형상 곡선을 작성하여 Vs 분포를 얕은 심도부터 30m까지 외삽할 수 있는 기법을 개발하였다. 얕은 심도 Vs 분포로부터의 Vs30 산정을 위하여 VsDs와 형상 곡선을 이용하는 두 기법은 최하단 Vs를 30m 심도까지 동일하게 연장하는 단순 기법에 비해 편향 정도가 적었으며, 특히 최소 10m 이상 심도까지 확보된 Vs분포의 경우 유용하게 적용될 수 있을 것으로 보인다.

한국인 아동의 측모에 관한 연구 (THE STUDY FOR THE PROFILES OF MIXED DENTITION)

  • 박태원
    • 치과방사선
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    • 제8권1호
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    • pp.17-21
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    • 1978
  • The study was to analyze on the hard and soft tissue profiles in mixed dentition. The subject consisted of 100 males and 100 females from 9 to 12 years of age and with a normal occlusion and acceptable profiles. On the basis of SnH line and SnV line, the author traced all the cephalograms and calculated the mean value and standard deviation in each measuring category and evaluated the sexual difference, the proper limit of development. The obtained results were as follows; 1. Individual variations of the lower facial part were larger the upper facial part in depth and height. 2. Sexual difference of lower facial part was significant in depth and height. 3. All the measured values to the SnH and SnV line were larger in male than in female but revealed resemblance in the profilogram. 4. The measured values of the region of nose, upper lip and point A showed stable tendency.

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Decision of Interface and Depth Scale Calibration of Multilayer Films by SIMS Depth Profiling

  • Hwang, Hye-Hyun;Jang, Jong-Shik;Kang, Hee-Jae;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.274-274
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    • 2012
  • In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

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Seasonal Variability of Sonic Layer Depth in the Central Arabian Sea

  • Bhaskar, TVS Udaya;Swain, Debadatta;Ravichandran, M
    • Ocean Science Journal
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    • 제43권3호
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    • pp.147-152
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    • 2008
  • The seasonal variability of sonic layer depth (SLD) in the central Arabian Sea (CAS) (0 to $25^{\circ}N$ and $62-66^{\circ}E$) was studied using the temperature and salinity (T/S) profiles from Argo floats for the years 2002-2006. The atmospheric forcing responsible for the observed changes was explored using the meteorological data from NCEP/NCAR and Quickscat winds. SLD was obtained from sound velocity profiles computed from T/S data. Net heat flux and wind forcing regulated SLD in the CAS. Up-welling and down-welling (Ekman dynamics) associated with the Findlater Jet controlled SLD during the summer monsoon. While in winter monsoon, cooling and convective mixing regulated SLD in the study region. Weak winds, high insolation and positive net heat flux lead to the formation of thin, warm and stratified sonic layer during pre and post summer monsoon periods, respectively.

압전방식초음파치석제거기의작업조건에따른치과주조용합금의삭제결손부 양상에 관한 고찰 (A morphologic evaluation of defects created by a piezoelectric ultrasonic scaler on casting gold alloy)

  • 김영성;김수환;김원경;이영규
    • Journal of Periodontal and Implant Science
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    • 제39권4호
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    • pp.385-390
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    • 2009
  • Purpose: In this study we evaluated the morphologic aspects of defects created by a piezoelectric ultrasonic scaler with scaler tip on casting gold alloy using scanning electron microscope (SEM) images and defect surface profiles. Methods: 54 blocks of type III casting gold alloy (Firmilay, Jellenko Inc, CA, USA) were scaled by a piezoelectric ultrasonic scaler (P-MAX, Satelec, France) with scaler tip (No. 1 tip) on a sledge device. 2-dimensional profiles of defects on all samples were investigated by a surface profilometer (a-Step 500, KLA-Tencor, CA, USA). The selected working parameters were lateral force (0.5 N, 1.0 N, 2.0 N), mode (P mode, S mode), and power setting (2, 4, 8). SEM images were obtained. Defect surface profiles were made on Microsoft Excel program using data obtained by a surface profilometer. Results: Among P mode samples, there were similarities on defect surface profiles and SEM images regardless of lateral force. The defects created in P mode were narrow and shallow although the depth and the width increased as power setting changed low (2) to high (8). In P mode samples, the defect depth was the greatest when lateral force of 0.5 N was applied. However all the depths were smaller than 1 m. SEM images of Lateral force of 0.5 N, S mode, power setting 2 and 4 were similar to that of P mode, but the other SEM images of S mode showed discernible changes. Defect depth of S mode samples was the greatest when lateral force of 1.0 N was applied. Conclusions: Within the limitations of this study, it can be concoluded that removing capability of piezoelectric scaler with scaler tip becomes maximized as power level becomes higher but the capability is restricted when excessive lateral force is applied on scaler tip.

실리콘에 MeV로 이온주입된 AS 와 Sb의 profile과 열처리에 의한 이온의 거동에 관한 연구 (A study of profiles and annaealing behavior of As and Sb by MeV implantation in silicon)

  • 정원채
    • 전자공학회논문지D
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    • 제35D권3호
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    • pp.46-55
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    • 1998
  • This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

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Observed characteristics of tropical cyclone vertical wind profiles

  • Giammanco, Ian M.;Schroeder, John L.;Powell, Mark D.
    • Wind and Structures
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    • 제15권1호
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    • pp.65-86
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    • 2012
  • Over the last decade substantial improvements have been made in our ability to observe the tropical cyclone boundary layer. Low-level wind speed maxima have been frequently observed in Global Positioning System dropwindsonde (GPS sonde) profiles. Data from GPS sondes and coastal Doppler radars were employed to evaluate the characteristics of tropical cyclone vertical wind profiles in open ocean conditions and at landfall. Changes to the mean vertical wind profile were observed azimuthally and with decreasing radial distance toward the cyclone center. Wind profiles within the hurricane boundary layer exhibited a logarithmic increase with height up to the depth of the wind maximum.