한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2011년도 제40회 동계학술대회 초록집
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- Pages.347-347
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- 2011
Conversion from SIMS depth profiling to compositional depth profiling of multi-layer films
- Jang, Jong-Shik (Division of Industrial Metrology, Korea Research Institute of Standards and Science) ;
- Hwang, Hye-Hyen (Division of Industrial Metrology, Korea Research Institute of Standards and Science) ;
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Kang, Hee-Jae
(Department of Physics, Chungbuk National University) ;
- Kim, Kyung-Joong (Division of Industrial Metrology, Korea Research Institute of Standards and Science)
- 발행 : 2011.02.09
초록
Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).