• Journal of Environmental Science International
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• v.1 no.1
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• pp.1-1
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• 1992

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.881-888
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• 1997

This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Analytical Science and Technology
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• v.8 no.4
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• pp.707-714
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• 1995

Two types of regularization method (singular system and HMP approaches) for generating depth-concentration profiles from angle-resolved XPS data were evaluated. Both approaches showed qualitatively similar results although they employed different numerical algorithms. The application of the regularization method to simulated data demonstrates its excellent utility for the complex depth profile system. It includes the stable restoration of the depth-concentration profiles from the data with considerable random error and the self choice of smoothing parameter that is imperative for the successful application of the regularization method. The self choice of smoothing parameter is based on generalized cross-validation method which lets the data themselves choose the optimal value of the parameter.

• Journal of Korean Society of Water and Wastewater
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• v.21 no.3
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• pp.287-294
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• 2007

When we use the circular pipes for wastewater and storm water, we should be known the characteristics of the flow for accurate design. To elevate the design accuracy, we want to know the profile of flow. The roughness coefficient in the Manning equation is constant, but in actuality changed with the relative depth in circular pipe. This study was conducted to calculate the relative normal depth in changing the roughness coefficient (named relative roughness coefficient) with the relative depth in the analysis of gradually varied flow in the circular pipe by Newton-Raphson method. We performed the analysis of gradually varied flow using the relative normal depth and the relative roughness coefficient. We presented the 12 flow profiles with the relative depth and the relative roughness coefficient in circular pipe. The flow classification considering relative depth in circular pipe is available to analyse gradually varied flow profiles.

• International Journal of Highway Engineering
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• v.14 no.3
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• pp.9-14
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• 2012

In this study, the profiles of asphalt pavements were measured using a lightweight profiler and depths of macrotexture were analyzed based on the measured profiles. Profiles on dense graded asphalt pavement, prorous asphalt pavement, stone mastic asphalt (SMA) pavement, and base layer measured, and depth of macrotexture were calculated and analyzed. Profiles on the pavement that happened as asphalt mixture segregation were measured and depths of macrotexture were analyzed. The results showed that the depths of macrotexture of asphalt pavement were effectively calculated using the measured profiles, and the depths of macrotexture for different asphalt pavements were analyzed. The pavement areas which have asphalt mixture segregation were detected based on analysis of macrotexture depths.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.99-106
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• 1996

Two types of regularization method (singular system and HMP approaches) for generating depth-concentration profiles from angle-resolved XPS data were evaluated. Both approaches showed qualitatively similar results although they employed different numerical algorithms. The application of the regularization method to simulated data demonhstrates its excellent utility for the complex depth profile system . It includes the stable restoration of depth-concentration profiles from the data with considerable random error and the self choice of smoothing parameter that is imperative for the successful application of the regularization method. The self choice of smoothing parameter is based on generalized cross-validation method which lets the data themselves choose the optimal value of the parameter.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.5-7
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• 2002

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1250-1264
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• 2023

This paper presents approximate in-depth residual stress and plastic strain profiles for laser-peened alloy 600 surface via FE analysis. In approximations, effects of the initial welding residual stress and the number of shots are quantified. Based on FE analysis results, residual stress profiles are quantified by two variables; the maximum difference in stress before and after LSP, and the depth up to which the compressive residual stress exists. Plastic strain profiles are quantified by one variable, the maximum equivalent plastic strain at the surface. The proposed profiles are validated by comparing with published LSP experimental results for welded plates. Effects of the initial welding residual stress and the number of shots on these variables are discussed. The proposed profile can be directly applied to predict the mitigation effect of LSP on PWSCC and to efficiently perform structural integrity assessment of laser peened nuclear components.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.