• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.54-58
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• 1994

H$_2$ bake and GeH$_4$ clean are used as a in-situ pre-clean method in low temperature Si based epitaxial growth technology using rapid thermal processing chemical vapor deposition (RTPCVD). In this paper, the H$_2$ bake and GeH$_4$ clean processes are optimized for low surface defect density using Taguchi method. In H$_2$ bake process, the epitaxial growth temperature affects dominantly on the surface defect density, and the next affecting factors are H$_2$ bake temperature and rinse time in de-ionised water. In GeH$_4$ clean process, GeH$_4$ clean temperature affects most strongly on the surface defect density, and the minor factor is GeH$_4$flow rate. The optimum process conditions predicted fly Taguchi method agree well with tile experimental data in both in-situ clean processes.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1590-1592
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• 2002

In this work the electrical characteristics of organic TFTs using organic insulator and flexible polyester substrate have been investigated. Pentacene and PVP(polyvinylphenol) are used as an active semiconducting layer and dielectric layer respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $1{\times}10^{-6}$ Torr and at a deposition rate of $0.5{\AA}$/sec, and PVP was spin-coated. Aluminium and gold were used for gate and source/drain electrodes. 0.1mm thick flexible polyester substrate was used instead of glass or silicon wafer.

• Journal of Surface Science and Engineering
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• v.38 no.4
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• pp.174-178
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• 2005

Chemical vapor deposition technique has been used to grow epitaxial SiC thin films on Si wafers using tetramethylsilane(TMS) precursor. The films were observed to grow along (110) direction of 3C-SiC at $800^{\circ}C$. The quality of the films was significantly influenced by the TMS flow rate and growth temperature. Nanocrystal SiC films were grown at flow rates of TMS 10 sccm with $H_2$ carrier gas of 100 sccm. The temperature and gas pressure in the reactor have a great influence on the crystallinity and morphology of the SiC film grown. The growth mechanism of the SiC film on the Si substrate without the carbonization process was discussed based on the experimental results.

• Tribology and Lubricants
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• v.11 no.5
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• pp.20-25
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• 1995

Diamond films were prepared by a hot filament vapor deposition onto polycrystal silicon nitride substrates. Different kinds of silicon nitride containing CaO and $Fe_{2}O_{3}$ were manufactured to investigate the impurity effect of substrate on the morphology of diamond films and their wear behaviors. Nucleation rates and morphologies of diamond films deposited on various kinds of silicon nitride were compared. The highest nucleation rate was observed in a substrate containing 1% of CaO. Wear tests were performed with a silicon nitride ball on the disk geometry to investigate the tribological behavior of diamond film against silicon nitride. This study demonstrated that different morphologies of diamond film due to substrate impurities produced different wear behavior against silicon nitride.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.304-304
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• 2012

CIGS(CuInGaSe2) 태양전지의 후면전극(Back contact)으로 널리 사용되는 Mo 박막은 낮은 면저항, 높은 반사율, 광흡수층 Na-path 제공 등의 조건이 요구된다. 일반적으로 Mo 박막 제작은 DC 마그네트론 스퍼터링 방법이 가장 널리 사용되며, 제작조건에 따라 태양전지 효율에 강한 영향을 미치는 것으로 보고되고 있다. 본 연구에서는 DC 마그네트론 스퍼터링 시 기판에 이온빔(Ion-beam)을 동시 조사하는 이온 빔 스퍼터링 증착(Ion-beam sputter deposition)법으로 Mo 박막을 제작하였다. 제작된 박막의 전기적 및 광학적 특성은 4-point probe, UV-Vis-NIR spectrometer로 각각 조사하였으며 Na-path 제어를 위한 구조적 특성은 XRD, FE-SEM으로 분석하였다. 분석결과에 따르면 기존 DC 마그네트론 스퍼터링 방법보다 상대적으로 더 치밀한 구조와 높은 반사율을 가지는 박막이 제작됨을 알 수 있었다. Mo 박막의 최적조건은 DC power 300 W, Ion-gun power 50 W, Ar flow rate 20 sccm 였다.

• Transactions of the Korean Society of Automotive Engineers
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• v.2 no.4
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• pp.39-49
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• 1994

An experimental investigation was undertaken in a diesel spray to evaluate wall impingement behavior and droplet size distribution. Emphasis is placed on the possibility of the application for new combustion type which is based on OSKA-D type. Visualization were employed using optical scheme which was a spark shadowgraphy to observe the behavior of wall impingement caused by diesel spray vertically injected at the center of the combustion chamber. Droplet size measurements using Malvern system were made to quantify the visual observations with surface diameter of impingement. The effects of the surface dia. variation on the droplet size during injection with the wall impingement spray are discussed. It was found that for the wall impingement spray the droplet size becomes greatly small rather than the spray without the wall impingement and the droplet deposition rate of the injection fuel is decreased as the surface area of impingement becomes small.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.60-65
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• 2006

Previous studies demonstrated that laser ablation under transparent liquid can result in ablation enhacement and particle removal from the surface. In this work, the liquid-assisted excimer laser ablation process is examined fer polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), Si, and alumina with emphasis on ablation enhacement, surface topography, and debris formation. In the case of PET and PMMA, the effect of liquid is analyzed both fer thin water film and bulk water. As the ablation enhanement by liquid is already known for Si and alumina, the analysis focuses on surface topography and debris formation resulting from the liquid-assisted laser ablation process. The results show that application of liquid increases the ablation rate of PMMA while that of PET remains unchanged even in the liquid-assisted process. It is also revealed that the liquid can significantly improve the surface quality by reducing the debris deposition. However, the surface roughness is generally deteriorated in the liquid-assisted process. The surface toporaphy is found to be strongly dependent on the method of liquid application, i.e., thin film or bulk liquid.

• Journal of Surface Science and Engineering
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• v.40 no.3
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• pp.131-137
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• 2007

The typical MCFC (molten carbonate fuel cell) anode is made of Ni-10%Cr alloy. The work of this paper is focused concerning long life of anode because Ni-10% Cr anode is suffering from sintering and creep behavior during cell operation. Therefore, Ni-coated Alumina powder($20{\mu}m$) was developed by electroless nickel plating. Optimum condition of electroless nickel coation on $20{\mu}m$ alumina is as follows: pH 11.7, temperature $65{\sim}80^{\circ}C$, powder amount $100cm^2/l$. The deposition rate for Ni-electroless plating was as a function of temperature and activation energy was evaluated by Arrhenius Equation thereby activation energy calculated slope of experimental data as 117.6 kJ/mol, frequency factor(A) was $6.28{\times}10^{18}hr^{-1}$, respectively.

• Particle and aerosol research
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• v.5 no.3
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• pp.95-109
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• 2009

A low temperature plasma process has been widely used for semiconductor fabrication and can also be applied for the preparation of solar cell, MEMS or NEMS, but they are notorious in the point of particle contamination. The nano-sized particles can be generated in the low temperature plasma process and they can induce several serious defects on the performance and quality of microelectronic devices and also on the cost of final products. For the preparation of high quality thin films of high efficiency by the low temperature plasma process, it is desirable to increase the deposition rate of thin films with reducing the particle contamination in the plasmas. In this paper, we introduced the studies on the generation and growth of nanoparticles in the low temperature plasmas and tried to introduce the recent interesting studies on nanoparticle generation in the plasma reactors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.386-388
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• 1996

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.