• Korean Chemical Engineering Research
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• v.44 no.3
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• pp.300-306
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• 2006

Photocatalyst deposited beads were prepared by fluidized bed chemical vapor deposition (FB-CVD) under various operating conditions of substrates, bed temperature, pressure, and oxygen concentration. Photocatalytic degradation of acetaldehyde was carried out to determine the optimum operating condition of prepared photocatalysts. They were characterized by using FE-SEM, XRD, and XPS. From the FE-SEM photographs, it was found that the surfaces of titania-coated beads were covered with crystal form, particle form, and slick form of titania on alumina, silica-gel, and glass beads, respectively. From the result of photocatalytic degradation of acetaldehyde, it was found that prepared titania/ alumina beads at $600^{\circ}C$, 5 torr showed superior performance to others, and oxygen flow rate has no significant effect.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.355-360
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• 2002

ElectroSlag Strip Overlaying (ESSO) process has been around since 1970. ESSO process had limited acceptance due to a few problems associated with the use of this process in its very early stage. Limited knowledge and, most significantly, poor quality of the equipment and welding flux gave the ESSO process a bad name. However, this process is well accepted today and used in North America, Europe and Japan. The ESSO process provides low dilution overlays at high deposition rates, excellent and consistent deposit chemistry with excellent surface quality, and virtually no defects. Capitan has taken this process one step further through extensive research and development of the process itself as well as the equipment. The improvement brought to the process warranted the issuance in May 2000 of an US patent. This study demonstrates the feasibility of this process with immediate positive production results. The main achievements of this work are as follows: $\textbullet$ Development of six various strip-flux combinations on three different base materials: carbon steel, $\frac{1}{4}$ Cr/.5 Mo and 2 $\frac{1}{4}$ Cr/l Mo, fully tested with: penetrant, ultrasound, bends, hardness, overlay chemistry, corrosion and hydrogen disbonding. $\textbullet$ 12" dia. 90 hot formed elbows from straight pipe electroslag overlayed with "1 layer" and "2 layer" Alloy 625 $\textbullet$ a very unique development of miniaturized overlaying equipment able to perform overlay in pipe with diameters as low as 10" (254 mm). This development has large applications in the field of offshore, petrochemical, refining, pulp and paper and power generation industries. The aftermath of this development was its immediate acceptance by major end users with the completion of four projects of overlayed pipe in the USA and Far East Asia.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.493-498
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• 2002

$Al_2O_3$ is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since $OH^-$ radical in $Al_2O_3$ films deposited by ALD using TMA and $H_2O$ degrades the good properties of $Al_2O_3$, TMA and $O_3$ were used to deposite $Al_2O_3$ films and the effects of $O_3$ on the properties of the $Al_2O_3$ films were investigated. The growth rate of the $Al_2O_3$ film under the optimum condition was 0.85 $\AA$/cycle. According to the XPS analysis results the $OH^-$ concentration in the $Al_2O_3$ film deposited using $O_3$ is lower than that using $H_2O$. RBS analysis results indicate the chemical formula of the film is $Al_{2.2}O_{2.8}$. The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the $Al_2O_3$ film deposited by ALD using $O_3$ is nearly 100%.

• Journal of Hydrogen and New Energy
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• v.14 no.1
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• pp.24-34
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• 2003

For gaseous fuel combustion with inherent $CO_2$ capture and low NOx emission, chemical-looping combustion may yield great advantages for the savings of energy to $CO_2$ separation and suppressing the effect on environment, In chemical-looping combustor, fuel is oxidized by metal oxide medium in a reduction reactor. Reduced particles are transported to oxidation reactor and oxidized by air and recycled to reduction reactor. The fuel and the air are never mixed, and the gases from reduction reactor, $CO_2$ and $H_2O$, leave the system as separate stream. The $H_2O$ can be easily separated by condensation and pure $CO_2$ is obtained without any loss of energy for separation. In this study, five oxygen carrier particles such as NiO/bentonite, NiO/YSZ, $(NiO+Fe_2O_3)VYSZ$, $NiO/NiAl_2O_4$, and $Co_{\chi}O_y/CoAl_2O_4$ were examined &om the viewpoints of reaction kinetics, oxygen transfer capacity, and carbon deposition characteristics. Among five oxygen particles, NiO/YSZ particle is superior in reaction rate, oxygen carrier capacity, and carbon deposition to other particles. However, at high temperature ($>900^{\circ}C$), NiO/bentonite particle also shows enough reactivity and oxygen carrier capacity to be applied in a practical system.

• Journal of Hydrogen and New Energy
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• v.23 no.6
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• pp.573-580
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• 2012

Corrosion resistance and basic physical properties of solid tantalum are not comparable to most of the structural metallic materials. The relative high cost and melting temperature of tantalum are obstacles to be widely applied to general engineering processes. Electrodeposition in molten salt enables compact and uniform tantalum coating. In this study, Ta was coated onto base metal (SUS316L) with different current densities (0.5, 5, $20mA/cm^2$) by using MSE (Molten Salt Electrodeposition). In this study, it showed that deposition efficiency and microstructure of Ta coating layer were strongly depended on current density. In the case of the current density of $5mA/cm^2$, densest microstructure was obtained. The current density above $5mA/cm^2$ caused non-uniform microstructure due to rapid deposition rate. Dense microstructure and intact coating layer contributed to significant corrosion resistance enhancement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.215-215
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• 2010

The feasibility of InSbTe (IST) chalcogenide materials prepared by metalorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below $225^{\circ}C$ exhibited an amorphous structure, and the films grown at $300^{\circ}C$ Cincluded various crystalline phases such as In-Sb-Te, In-Sb, In-Te, and Sb-Te. The composition of the amorphous films grown at $225^{\circ}C$ was dependent on the working pressure. Films grown at $225^{\circ}C$ exhibited a smooth morphology with a root mean square(rms) roughness of less than 1nm, and the step-coverage of the films grown on a trench structure with an aspect ratio of 5:1 was greater than 90%. An increase in deposition time increased the filling rate, while retaining the conformal step-coverage. Films grown at $225^{\circ}C$ for 3h in a working pressure of $13{\times}10^2$ Pa exhibited a reproducible and complete filling in a trench structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Journal of the Korean Solar Energy Society
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• v.29 no.5
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• pp.35-44
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• 2009

In this study, boiling heat transfer coefficients(HTCs) and critical heat flux(CHF) are measured on a smooth square flat copper heater in a pool of pure water with and without carbon nano tubes(CNTs) dispersed at $60^{\circ}C$. Tested aqueous nanofluids are prepared using multi-walled CNTs whose volume concentrations are 0.0001, 0.001, 0.01, and 0.05%. For dispersion of CNTs, polyvinyl pyrrolidone(PVP) is used in distilled water. Pool boiling HTCs are taken from $10kW/m^2$ to critical heat flux for all nanofluids. Test results show that the pool boiling HTCs of the nanofluids are lower than those of pure water in entire nucleate boiling regime. On the other hand, critical heat flux is enhanced greatly showing up to 200% increase at volume concentration of 0.001% CNTs as compared to that of pure water. This is related to the change of surface characteristics by the deposition of CNTs. This deposition makes a thin CNT layer on the surface and the active nucleation sites of heat transfer surface are decreased due to this layer. The thin layer acts as the thermal resistance and also decreases the bubble generation rate resulting in a decrease in pool boiling HTCs. The same layer, however, maintains the nucleate boiling even at very high heat fluxes and reduces the formation of large vapor canopy at near CHF resulting in a significant increase in CHF.