• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.85-88
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• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• Macromolecular Research
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• 제10권4호
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• pp.204-208
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• 2002

A linear rod-like molecule, bis[4-(1,3-octadynyl)phenyl] terephthalate (2), consisting of two diacetylenic groups, was prepared. The unsymmetric diacetylene was prepared by the Cadiot-Chodkiewicz coupling reaction of 1-bromohexyne with 4-ethynylphenol and linked to a benzene core by an esterification reaction with terephthaloyl chloride in tetrahydrofuran. The thin film (200 nm thickness) of compound 2 was fabricated by the physical vapor deposition on a glass plate with a thermal evaporator. In the X-ray diffraction (XRD) study, the vapor deposited film on the glass plate showed peaks with d spacings of 19.4, 5.7, and 4.5 $\AA$. This XRD pattern was quite different from that observed for compound 2 isolated by recrystallization from methylene chloride/hexane. The vapor deposited film was polymerized by UV irradiation. Photopolymerization was carried out through a photomask, resulting in a patterned image, where the irradiated part became isotropic.

• 한국자기학회지
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• 제11권3호
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• pp.129-133
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• 2001

본 연구에서는 TiO$_2$ 하지층이 첨가된 hexagonal barium-ferrite(BaM) 박막을 RF/DC magnetron sputtering system을 이용하여 상온에서 증착한 후, 여러 온도에서 열처리하여 결정화하였다. BaM박막에 TiO$_2$ 하지층을 첨가하여 열처리한 경우 Si와 BaM의 (006), (106), (114), (217), (2011) peak들이 사라지고 (008)의 intensity가 낮아졌으며 SiO$_2$와 (116), (302)의 peak들이 성장하였음을 XRD pattern을 통하여 알 수 있었다. BaM 박막의 자기적 특성을 VSM을 통하여 알아본 결과, 보자력, 잔류자화, 각형비 등의 자기적인 특성들은 수직에 비해 수평이 더 좋게 나타났는데, 이러한 결과로 박막면에 평행한 방향으로의 자화용이축이 존재하고 있다는 것을 알 수 있었다. SEM을 통하여 증착압력 및 열처리 시간에 따른 결정화 정도와 자기적 특성을 알아본 결과 5 mTor 보다 10 mTrr에서 더 좋게 나타났으며, 열처리를 시작한 뒤 10분 이내에 750 $^{\circ}C$ 이상에서 대부분의 특성변화가 일어났음을 알 수 있었다.

• 한국재료학회지
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• 제21권6호
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Molecules and Cells
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• 제41권2호
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• pp.140-149
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• 2018

The $TIS21^{/BTG2/PC3}$ gene belongs to the antiproliferative gene (APRO) family and exhibits tumor suppressive activity. However, here we report that TIS21 controls lipid metabolism, rather than cell proliferation, under fasting condition. Using microarray analysis, whole gene expression changes were investigated in liver of TIS21 knockout (TIS21-KO) mice after 20 h fasting and compared with wild type (WT). Peroxisome proliferator-activated receptor alpha ($PPAR{\alpha}$) target gene expression was almost absent in contrast to increased lipid synthesis in the TIS21-KO mice compared to WT mice. Immunohistochemistry with hematoxylin and eosin staining revealed that lipid deposition was focal in the TIS21-KO liver as opposed to the diffuse and homogeneous pattern in the WT liver after 24 h starvation. In addition, cathepsin E expression was over 10 times higher in the TIS21-KO liver than that in the WT, as opposed to the significant reduction of thioltransferase in both adult and fetal livers. At present, we cannot account for the role of cathepsin E. However, downregulation of glutaredoxin 2 thioltransferase expression might affect hypoxic damage in the TIS21-KO liver. We suggest that the $TIS21^{/BTG2}$ gene might be essential to maintain energy metabolism and reducing power in the liver under fasting condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.423-423
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• 2007

In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.86-86
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• 2010

Micro- and nanoscale texturing and control of surface energy have been considered for superhydrophobicity on polymer and silicon. However these surfaces have been reported to be difficult to meet the robustness and transparency requirements for further applications, from self cleaning windows to biochip technology. Here we provided a novel method to fabricate a nearly superhydrophobic soda-lime glass using two-step method. The first step involved wet etching process to fabricate micro-sale patterns on soda-lime glass. The second step involved application of $SiO_x$-incorporated DLC to generate high intrinsic contact angle on the surface using chemical vapor deposition (CVD) process. To investigate the effect of surface roughness, we used both positive and negative micro-scale patterns on soda-limeglass, which is relatively hard for surface texturing in comparison to quartz or Pyrex glasses due to the presence of impurities, but cheaper. For all samples we tested the static wetting angle and transparency before and after 100 cycles of wear test using woolen steel. The surface morphology is observed using optical and scanning electron microscope (SEM). The results shows that negative patterns had a greater wear resistance while the hydrophobicity was best achieved using positive patterns having static contact angle up to 140 deg. with about 80% transparency. The overall experiment shows that positive patterns at etching time of 1 min shows the optimum transparency and hydrophobicity. The optimization of micro-scale pattern to achieve a robust, transparent, superhydrophobic soda-lime glass will be further investigated in the future works.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.