• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권4호
• /
• pp.326-332
• /
• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.73-78
• /
• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.333-334
• /
• 2008

The SCT thin films were deposited on Pt-coated electrode using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[$^{\circ}C$]. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The maximum dielectric constant of SCT thin film was obtained by annealing at $600^{\circ}C$.

• 대한기계학회논문집B
• /
• 제32권12호
• /
• pp.963-969
• /
• 2008

The performance behavior of solid oxide fuel cell using $H_2$ and CO as fuels was investigated. The power densities and impedance results showed a little variation as the ratio of $H_2$ and CO changed. However, when the pure CO was used as a fuel, area specific resistance (ASR), especially low frequency region, was increased. This might be due to carbon deposition on anode. The maximum power density was 60% lower using CO than using $H_2$. Carbon deposition reduced after constant current was applied. The SOFC performance was recovered from the carbon deposition after applying constant current during 100h.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권12호
• /
• pp.576-580
• /
• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Bulletin of the Korean Chemical Society
• /
• 제35권10호
• /
• pp.2941-2944
• /
• 2014

The electrical and mechanical properties of the plasma polymerized low dielectric constant SiCOH films were investigated. The SiCOH films were produced with tetrakis(trimethylsilyloxy)silane and cyclohexane as precursors by using a plasma enhanced chemical vapor deposition. When the deposition plasma powers were changed from 10 to 50 W, the relative dielectric constant of the SiCOH film increased from 2.09 to 2.76 and their hardness and elastic modulus were changed from 1.6 to 5.6 GPa and from 16 to 44 GPa, respectively. After thermal annealing at $500^{\circ}C$, the annealed SiCOH films showed relative dielectric constants of 1.80-2.97, a hardness of 0.45-0.6 GPa and an elastic modulus of 6-7 GPa. And then, the chemical structures of as-deposited and annealed SiCOH films were analyzed by using Fourier transform infrared spectroscopy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
• /
• pp.107-107
• /
• 2001

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.57-57
• /
• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• 한국전기전자재료학회논문지
• /
• 제16권9호
• /
• pp.795-800
• /
• 2003

The dielectric and piezoelectric properties of the xPb(A $l_{0.5}$N $b_{0.5}$) $O_3$-(1-x)Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$ [xPAN-(1-x)PZT] thin films by pulsed laser deposition (PLD) were investigated as a function of PAN contents. The effect of texture on dielectric and piezoelectric properties of the 0.05PAN-0.95PZT thin films having the highest piezoelectric constant( $d_{33}$) was studied more precisely. For 0$\leq$x$\leq$0.15 compositions in xPAN-(1-x)PZT thin films, the well-developed perovskite phase with (111) preferred orientation was obtained at the deposition temperature of 50$0^{\circ}C$. With increasing PAN content, remanent polarization and coercive field decreased. The dielectric constant increased with an increase of PAN content until it reached 1450 at $\chi$= 0.05, and then decreased for higher PAN content. The maximum points of dielectric constant coincides with the maximum points of the piezoelectric constant $d_{33}$.33/.33/././.

• 대한기계학회논문집B
• /
• 제21권3호
• /
• pp.371-379
• /
• 1997

A theoretical study for a forced uniform flow impinging on a rotating disk, typically involved in Chemical Vapor Deposition(CVD) and Vapor-phase Axial Deposition(VAD) processes, has been carried out. A set of exact solutions for flow and temperature fields are developed by employing a similarity variable obtained from force balance on a control volume near the disk. The solutions depend on the rotating speed of the disk, .omega., and the forced flow speed toward the disk, a. For constant forced flow speed, the overall boundary layer thickness decreases when the rotating speed increases. Approximately 5%, 15%, and 30% decreases of the thickness are obtained for .omega./a = 2, 5, and 10, respectively, compared to the case of .omega./a = 0 (axisymmetric stagnation point flow). For constant rotating disk speed the boundary layer thickness immediately decreases as the forced flow speed increases, compared to the case of .omega./a .rarw. .inf. (induced flow near a rotating disk). Effects of .omega. and a on heat transfer coefficient are studied and explained with the boundary layer characteristics.