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http://dx.doi.org/10.5012/bkcs.2014.35.10.2941

Characteristics of Plasma Polymerized Low-dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors  

Kim, Hoonbae (Department of Physics, Sungkyunkwan University)
Oh, Hyojin (Foundry Business Team, Samsung Electronics)
Lee, Chaemin (Department of Physics, Sungkyunkwan University)
Jung, Donggeun (Department of Physics, Sungkyunkwan University)
Boo, Jin-Hyo (Department of Chemistry, Sungkyunkwan University)
Publication Information
Bulletin of the Korean Chemical Society / v.35, no.10, 2014 , pp. 2941-2944 More about this Journal
Abstract
The electrical and mechanical properties of the plasma polymerized low dielectric constant SiCOH films were investigated. The SiCOH films were produced with tetrakis(trimethylsilyloxy)silane and cyclohexane as precursors by using a plasma enhanced chemical vapor deposition. When the deposition plasma powers were changed from 10 to 50 W, the relative dielectric constant of the SiCOH film increased from 2.09 to 2.76 and their hardness and elastic modulus were changed from 1.6 to 5.6 GPa and from 16 to 44 GPa, respectively. After thermal annealing at $500^{\circ}C$, the annealed SiCOH films showed relative dielectric constants of 1.80-2.97, a hardness of 0.45-0.6 GPa and an elastic modulus of 6-7 GPa. And then, the chemical structures of as-deposited and annealed SiCOH films were analyzed by using Fourier transform infrared spectroscopy.
Keywords
Low dielectric constant; Plasma enhanced chemical vapor deposition; Fourier transform infrared spectroscopy; Hardness; Elastic modulus;
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