• 제목/요약/키워드: deposited layer

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The Neoproterozoic and Cretaceous Tectonic Evolution and Important Geoheritages in the Gogunsan Archipelago (고군산군도 지역의 신원생대 및 백악기 지구조 진화과정과 중요 지질유산)

  • Oh, Chang Whan;Kim, Won Jeong;Lee, Seung Hwan;Lee, Bo Young;Kim, Jin Seok;Choi, Seung Hyun
    • The Journal of the Petrological Society of Korea
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    • 제28권4호
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    • pp.251-277
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    • 2019
  • The Gogunsan Archipelago is composed of two island groups; the first group includes Mal-do, Myeong-do, Gwangdae-do, and Bangchuk-do islands consisting of Neoproterozoic rocks, and the second group includes Yami-do, Sinsi-do, Muneo-do, Jangja-do, and Seonyu-do islands consisting of Cretaceous rocks. The first group mainly consists of the Bangchuk formation which can be divided into two layers; the lower layer was more deformed than the upper layer. The former was intruded by mafic and felsic volcanic rocks formed in the volcanic arc tectonic setting 930-890 Ma and the latter was deposited ca. 825-800 Ma. In these islands, large scale folds with east-west fold axes were beautifully formed; the Maldo island fold was designated as natural monument and large scale beautiful chevron fold was developed on the Gwangdae-do island. In addition, there are unique zebra-shaped outcrop formed by a mixing of basic and acidic magma and Independent Gate shaped outcrop formed by coastal erosion. On the other hand, the Yami-do, Sinsi-do, Muneo-do, Jangja-do and Seonyu-do islands consist of 92-91Ma Cretaceous volcanic rocks and, in Sinsi-do island, the Nanshan formation deposited ca. 92 Ma. These Cretaceous volcanic rocks formed by melting of the continental crust by the heat supplied from the uplifting mantle due to the extension caused by a retreat of subducting ocean slab. Yami-do and Sinsi-do islands are composed of rhyolite. In Yami-do island, bands with vertical joint formed by cooling of the bottom part of the lava, are shown. In Sinsi-do island, large-scale vertical joints formed by cooling of lava flow, were developed. The Jangja-bong of Jangja-do island and Mangju-bong of Seonyu-do island are composed of brecciated rhyolite and formed a ring shaped archipelago contributing to the development of marine culture by providing natural harbor condition. They also provide beautiful views including 'Seonyu 8 views' along with other islands. As mentioned above, the Gogunsan archipelago is rich in geoheritages and associated cultural and historical resources, making it worth as a National Geopark.

The Late Quaternary Environmental Change in Youngyang Basin, South Eastern Part of Korea Penninsula (第四紀 後期 英陽盆地의 自然環境變化)

  • Yoon, Soon-Ock;Jo, Wha-Ryong
    • Journal of the Korean Geographical Society
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    • 제31권3호
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    • pp.447-468
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    • 1996
  • The peat layer was deposited on the abandoned channel of incised meander of River Banbyuncheon with 7 meter thickness on Youngyang basin. The late Quaternary environmental change on the study area was discussed based on pollen anaalysis and radiocarbon-dating from this peat. The swamp which was caused to sediment the peat, was produced by which the fan debris from the adjacent slope damed the waterflow on the abandoned channel. The peat layer contains continuous vegetational history from 60,000y.B.P. to Recent. The peat deposit was divided into two layers by the organic thin sand horizon, which was sedimented at one time and made unconformity between the lower decomposed compact peat layers and the upper fresh fiberous peat layer. As the result of the pollen analysis, both peat layers from the two boring sites, Profile YY1 and Profile YY2 were divided into five Pollenzones(Pollenzone I, II, III, IV and V) and 12 Subzones which were mainly corresponded by the AP (Arboreal Pollen)-Dominance. The two profiles have some differences on the sedimentary facies and on the pollen composition as well. Therefore these were in common with the Pollenone III, however the Pollenzone I and II existed only on the Profile YY1 and the Pollenzone IV and V existed only on the Profile YY2. The lower layer containing the Pollenzone I, II and III revealed vegetational records of Pleistocene, which was characterized as tundra-like landscape and thin forested landscapes. It represented the NAP (Non-Arboreal Pollen)-period with a plenty of Artemisia sp., Sanguisorba sp., Umbelliferae, Gramineae and Cyperaceae. However a relatively high proportion of the boreal trees with Picea sp., Pinus sp. and Betula sp. as AP was observed in the lower layer. The upper layer contained the Pollenzone IVb and V and vegetational history in Holocene which was characterized by thick forested landscape with rich tree pollen. It represented AP-period with plenty of Pinus sp. and Quercus sp. as temperate trees. The temperature fluctuation supposed from the vegetational records is as follows; the Pollenzone I(Betula-Dominance, about 57,000y.B.P.) represents relatively cold period. The Pollenzone II(EMW-Domi-nance, 57,000-43,000y.B.P.)represents relatively warm period. This period is supposed to be Interstadial, the transi-tional stage from Alt- to Mittel Wurm. The Pollenzone III(Butula-, Pinus- and Picea-Dominace in turns, 43,000-15,000y.B.P.) reproesents cold period which had been built from Mittel-to Jung Wurm. Especially the Subzone IIId represents the coldest period throughout the Pollenzone III. It is corresponds to Wurm Glacial Maximu. It is supposed that the mean temperature in July of this period was coller about 10${^\circ}$C than present. The Pollenzone IV and V represent the vegetational history of Holocene. Tilia, Quercus and Pinus were dominant in turns during this period. Subzone IVb and Pollenzone I and II at east coastal plain of Korean penninsula reported by JO(1979).

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Experimental Studies on Lead Toxicity in Domestic II. Histopathology (고양이의 납중독에 관한 실험적 연구 2. 조직병리학적 소견)

  • Hong Soon-Ho;Han Hong Ryul
    • Journal of Veterinary Clinics
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    • 제11권1호
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    • pp.485-505
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    • 1994
  • Lead toxicity was evaluated in forty-five cats on a balanced diet, treated with 0(control), 10, 100(low), 1, 000, 2, 000 and 4, 000(high)ppm of lead acetate orally on a body weight basis. The objectives were to describe the gross and histopathologic changes and to demonstrate what tissue lead concentrations correlate with the known dosages of lead. In subclinical lead toxicity, greater than 80% of the absorbed lead was deposited in the bone, whereas in more acute lead toxicity, 42% of absorbed lead was deposited in the bone and 36% and 20% of absorbed lead was deposited in the kidneys and in the liver, respectively. No gross lesions were found in the nervous system. Yellow-brown colored livers appear to be associated with lead toxicity. Neuronal necrosis in the cerebrum was the most predominant histopathologic finding. Astrocytic proliferation in the cerebral gray matter was observed in 1 high dose cat. Gliosis was noted in the cerebral cortex of 6 high dose cats. Two high dose cats had demyelination in the deepest layer of the cortical gray matter of the cerebrum. Extravasation of red cells and cavitation around the vessels were found in the cerebrum of 1 high dose cat. Six high dose cats had degeneration of Purkinje cells in the cerebellum. The microscopic findings in the peripheral nerves were ambiguous. In more acute toxicity, the cats had lead inclusions in the epithelial cells of proximal tubules of the kidneys of 7 cats and hepatocytes of the liver of S cats. These inclusions could be seen wlth H&E, but were more prominent with orcein staining. Two high dose cats had granulomas and connective tissue hyperplasia between tubules of the kidneys. Periportal hepatocyte vacuolization was observed in the liver of 22 cats. Vacuolization of seminiferous tubules and a reduced number of spermatogonia(indicative of reduced spermatogenesis) were found in the testis of 5 treated cats. Cystic ovaries were observed in 3 high dose cats and poor development of oogonia was found in 2 cats. The diagnosis of lead toxicity in cats can be suspected on the basis of the histopathologic lesions described, and can be of value in contributing to a diagnosis. A reliable diagnosis of lead poisoning can be helped utilizing tissue lead analysis(post molten)

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Fabrication and Characterization of $CuInSe_2$Thin Films from $In_2Se_3$ and$Cu_2Se$Precursors ($In_2Se_3$$Cu_2Se$를 이용한 $CuInSe_2$박막제조 및 특성분석)

  • Heo, Gyeong-Jae;Gwon, Se-Han;Song, Jin-Su;An, Byeong-Tae
    • Korean Journal of Materials Research
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    • 제5권8호
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    • pp.988-996
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    • 1995
  • CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

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Origin of limestone conglomerates in the Choson Supergroup(Cambro-Ordovician), mid-east Korea

  • Kwon Y.K.;Chough S.K.;Choi D.K.;Lee D.J.
    • 한국석유지질학회:학술대회논문집
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    • 한국석유지질학회 2001년도 제8차 학술발표회 발표논문집
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    • pp.63-65
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    • 2001
  • The Chosen Supergroup (Cambro-Ordovician), mid-east Korea consists mainly of shallow marine carbonates and contains a variety of limestone conglomerates. These conglomerates largely comprise oligomictic, rounded lime-mudstone clasts of various size and shape (equant, oval, discoidal, tabular, and irregular) and dolomitic shale matrices. Most clasts are characterized by jigsaw-fit (mosaic), disorganized, or edgewise fabric and autoclastic lithology. Each conglomerate layer is commonly interbedded with limestone-dolomitic shale couplets and occasionally underlain by fractured limestone layer, capped by calcareous shale. According to composition, characteristic sedimentary structures, and fabric, limestone conglomerates in the Hwajol, Tumugol, Makkol, and Mungok formations of Chosen Supergroup can be classified into 4 types: (1) disorganized polymictic conglomerate (Cd), (2) horizontally stratified polymictic conglomerate (Cs), (3) mosaic conglomerate (Cm), and (4) disorganized/edgewise oligomictic conglomerate (Cd/e). These conglomerates are either depositional (Cd and Cs) or diagenetic (Cm and Cd/e) in origin. Depositional conglomerates are interpreted as storm deposits, tidal channel fills, or transgressive lag deposits. On the other hand, diagenetic conglomerates are not deposited by normal sedimentary processes, but formed by post-depositional diagenetic processes. Diagenetic conglomerates in the Chosen Supergroup are characterized by autoclastic and oligomictic lithology of lime-mudstone clasts, jigsaw-fit (mosaic) fabric, edgewise fabric, and a gradual transition from the underlying bed (Table 1). Autoclastic and oligomictic lithologies may be indicative of subsurface brecciation (fragmentation). Consolidation of lime-mudstone clasts pre-requisite for brecciation may result from dissolution and reprecipitation of CaCO3 by degradation of organic matter during burial. Jigsaw-fit fabric has been considered as evidence for in situ fragmentation. The edgewise fabric is most likely formed by expulsion of pore fluid during compaction. The lower boundary of intraformational conglomerates of depositional origin is commonly sharp and erosional. In contrast, diagenetic conglomerate layers mostly show a gradual transition from the underlying unit, which is indicative of progressive fragmentation upward (Fig. 1). The underlying fractured limestone layer also shows evidence for in situ fragmentation such as jigsaw-fit fabric and the same lithology as the overlying conglomerate layer (Fig, 1). Evidence from the conglomerate beds in the Chosen Supergroup suggests that diagenetic conglomerates are formed by in situ subsurface fragmentation of limestone layers and rounding of the fragments. In situ subsurface fragmentation may be primarily due to compaction, dewatering (upward-moving pore fluids), and dissolution, accompanying volume reduction. This process commonly occurs under the conditions of (1) alternating layers of carbonate-rich and carbonate-poor sediments and (B) early differential cementation of carbonate-rich layers. Differential cementation commonly takes place between alternating beds of carbonate-rich and clay-rich layers, because high carbonate content promotes cementation, whereas clay inhibits cementation. After deposition of alternating beds and differential cementation, with progressive burial, upward-moving pore fluid may raise pore-pressure in the upper part of limestone layers, due to commonly overlying impermeable shale layers (or beds). The high pore-pressure may reinforce propagation of fragmentation and cause upward-expulsion of pore fluid which probably produces edgewise fabric of tabular clasts. The fluidized flow then extends laterally, causing reorientation and further rounding of clasts. This process is analogous to that of autobrecciation, which can be analogously termed autoconglomeration. This is a fragmentation and rounding process whereby earlier semiconsolidated portions of limestone are incorporated into still fluid portions. The rounding may be due mainly to immiscibility and surface tension of lime-mud. The progressive rounding of the fragmented clasts probably results from grain attrition by fluidized flow. A synthetic study of limestone conglomerate beds in the Chosen Supergroup suggests that very small percent of the conglomerate layers are of depositional origin, whereas the rest, more than $80\%$, are of diagenetic origin. The common occurrence of diagenetic conglomerates warrants further study on limestone conglomerates elsewhere in the world.

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A Study of Mo Back Electrode for CIGSe2 Thin Film Solar Cell (CIGSe2 박막태양전지용 Mo 하부전극의 물리·전기적 특성 연구)

  • Choi, Seung-Hoon;Park, Joong-Jin;Yun, Jeong-Oh;Hong, Young-Ho;Kim, In-Soo
    • Journal of the Korean Vacuum Society
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    • 제21권3호
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    • pp.142-150
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    • 2012
  • In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam (Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정)

  • Jung K.W.;Lee H.J.;Jung W.H.;Oh H.J.;Park C.W.;Choi E.H.;Seo Y.H.;Kang S.O.
    • Journal of the Korean Vacuum Society
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    • 제15권4호
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    • pp.395-403
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    • 2006
  • It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

A Study on the Reaction of Al-1% Si with Ti-silicide (Al-1% Si층과 Ti-silicide층의 반응에 관한 연구)

  • Hwang, Yoo-Sang;Paek, Su-Hyon;Song, Young-Sik;Cho, Hyun-Choon;Choi, Jin-Seog;Jung, Jae-Kyoung;Kim, Young-Nam;Sim, Tae-Un;Lee, Jong-Gil;Lee, Sang-In
    • Korean Journal of Materials Research
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    • 제2권6호
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    • pp.408-416
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    • 1992
  • Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

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Dielectric properties of ${Ta_2}{O_5}$ thin film capacitor with $SnO_2$ thin film underlayer ($SnO_2$ 박막을 이용한 ${Ta_2}{O_5}$박막 커패시터의유전특성)

  • Kim, Jin-Seok;Jeong, Gang-Min;Lee, Mun-Hui
    • Korean Journal of Materials Research
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    • 제4권7호
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    • pp.759-766
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    • 1994
  • Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

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Electrical Characteristics of Pt/SBT/${Ta_2}{O_5}/Si$ Structure for Non-Volatile Memory Device (비휘발성 메모리를 위한 Pt/SBT/${Ta_2}{O_5}/Si$ 구조의 전기적 특성에 관한 연구)

  • Park, Geon-Sang;Choe, Hun-Sang;Choe, In-Hun
    • Korean Journal of Materials Research
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    • 제10권3호
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    • pp.199-203
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    • 2000
  • $Ta_2_O5$ and $Sr_0.8Bi_2.4Ta_2O_9$ films were deposited on p-type Si(100) substrates by a rf-magnetron sputtering and the metal organic decomposition (MOD), respectively.The electrical characteristics of the $Pt/SBT/Ta_2O_5/Si$ structure were obtained as the functions of $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering and $Ta_2_O5$ thickness. And to certify the role of $Ta_2_O5$ as a buffer layer, the electrical characteristics of $Pt/SBT/Ta_2O_5/Si$ were compared. $Pt/SBT/Ta_2O_5/Si$ capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering did now show typical C-V curve of metal/ferroelectric/insulator/semiconductor (MFIS) structure. The capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering had the largest memory window. And the memory window was decreased as the $Ta_2_O5$ gas flow ratio during the $Ta_2_O5$ sputtering was increased to 40%, 60%. In the C-V characteristics of the $Pt/SBT/Ta_2O_5/Si$ capacitors with the different $Ta_2_O5$ thickness, the capacitor with 26nm thickness of $Ta_2_O5$ had the largest memory window. The C-V and leakage current characteristics of the Pt/SBT/Si structure were worse than those of $Pt/SBT/Ta_2O_5/Si$ structure. These results and Auger electron spectroscopy (AES) measurement showed that $Ta_2_O5$ films as a buffer layer tool a role to prevent from the formation of intermediate phase and interdiffusion between SBT and Si.

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