• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• 대한금속재료학회지
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• 제48권6호
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• pp.565-569
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• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• 한국지형학회지
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• 제20권4호
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• pp.147-163
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• 2013

상주 동천 상류부 산간분지의 출구에 위치하는 공검지는 통일신라시대 말기에 조성된 것으로 파악된다. 공검지 제방이 축조되기 이전에는 분지에 넓은 습지가 형성되었으며, 갈수기에는 공기 중에 노출되면서 대단히 치밀한 실트층이 퇴적되었다. 청동기시대 초기와 초기철기시대의 분지에는 주로 밭에 기장을 재배하였다. 삼국시대에는 논농사와 밭농사가 이루어졌을 것으로 생각되지만 퇴적층이 발견되지 않았다. 제방이 축조되면서 분지 내 밭에는 기장을 재배하며 논농사를 병행하였을 것이다. 공검지 일대의 청동기시대 초기기후는 냉량하였고 초기철기시대 동안의 기후는 대체로 온난하였다. 제방이 축조된 통일신라시대 말기부터 고려시대 중기까지도 역시 온난하였으나, 이후 냉량, 온난한 시기를 반복하다가 고려시대 말부터 점차 냉량해진다.

• 한국지형학회지
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• 제20권1호
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• pp.57-74
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• 2013

순천시 와온마을 일대에는 해발고도 8.3m의 단구가 발달하고 있다. 단구면 내부에는 여러 단의 원력층 (4.3m, 5.8m, 6.3m) 뿐만 아니라 현재와는 다른 환경에서 퇴적된 사질층을 포함하고 있어 과거 해수준에 대한 추정과 함께, 형성 당시의 기후 환경적 특색을 파악할 수 있다. 이를 파악하기 위해 단면기술, 입도분석, XRD, 박편분석을 시도하였으며, 다른 지역과의 비교를 통해 상대적인 편년을 추정하였다. 분석결과 와온단면은 최후간빙기(MIS 5)보다는 좀 더 근자에 형성되었을 것으로 추정되며, 이 시기에 다양한 토양학적 특징을 형성한 것으로 보인다.

• Current Optics and Photonics
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• 제2권2호
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• pp.125-133
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• 2018

We report an in-depth analysis of the design and fabrication of multilayer dielectric (MLD) diffraction gratings for spectral beam combining at a wavelength of 1055 nm. The design involves a near-Littrow grating and a modal analysis for high diffraction efficiency. A range of wavelengths, grating periods, and angles of incidence were examined for the near-Littrow grating, for the $0^{th}$ and $-1^{st}$ diffraction orders only. A modal method was then used to investigate the effect of the duty cycle on the effective indices of the grating modes, and the depth of the grating was determined for only the $-1^{st}$-order diffraction. The design parameters of the grating and the matching layer thickness between grating and MLD reflector were refined for high diffraction efficiency, using the finite-difference time-domain (FDTD) method. A high reflector was deposited by electron-beam evaporation, and a grating structure was fabricated by photolithography and reactive-ion etching. The diffraction efficiency and laser-induced damage threshold of the fabricated MLD diffraction gratings were measured, and the diffraction efficiency was compared with the design's value.

• 소성∙가공
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• 제28권1호
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• pp.21-26
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• 2019

Direct Laser Melting (DLM) of $Ti-xTiH_2$ (mixing ratio x = 2, 5, 10 wt.%) blended powder is characterized by producing porous titanium parts. When a high energy laser is irradiated on a $Ti-TiH_2$ blended powder, hydrogen gas ($H_2$) is produced by the accompanying decomposition of the $TiH_2$ powder, and acts as a pore-forming and activator. The hydrogen gas trapped in a rapidly solidified molten pool, which generates porosity in the deposited layer. In this study, the effects of a $TiH_2$ mixing ratio and the associated processing parameters on the development of a porous titanium were investigated. It was determined that as the content of $TiH_2$ increases, the resulting porosity density also increases, due to the increase of $H_2$ produced by $TiH_2$. Also, porosity increases as the scan speed increases. As fast solidified melting pools do not provide enough time for $H_2$ to escape, the faster the scan speed, the more the resulting $H_2$ is captured by the process. The results of this study show that the mixing ratio (x) and laser machining parameters can be adjusted to actively generate and control the porosity of the DLM parts.

• Current Optics and Photonics
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• 제3권1호
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• pp.66-71
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• 2019

Application of liquid crystal (LC) materials to a flexible device is challenging because the bending of LC displays easily causes change in thickness of the LC layer and orientation of LCs, resulting in deterioration in a displayed image quality. In this work, we demonstrate a prototype device combining a flexible polymer substrate and an optically isotropic LC-polymer composite in which the device consists of interdigitated in-plane switching electrodes deposited on a flexible colorless polyimide substrate and the composite consisting of nano-sized LC droplets in a polymer matrix. The device can keep good electro-optic characteristics even when it is in a bending state because the LC orientation is not disturbed in both voltage-off and -on states. The proposed device shows a high potential to be applicable for future flexible LC devices.

• Current Photovoltaic Research
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• 제7권1호
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• 대한금속재료학회지
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• 제50권4호
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• pp.331-337
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• 2012

Electrical properties as a function of composition in silicon nitride ($SiN_x$) films grown at low temperatures ($<200^{\circ}C$) were studied for applications to photonic devices and thin film transistors. Both silicon-rich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, $R=[(N_2\;or\;NH_3)/SiH_4]$, and the RF plasma power. Depending on the film composition, the dielectric and optical properties of $SiN_x$ films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si = 1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the silicon-rich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to $150^{\circ}C$ of the process temperature.

• 대한금속재료학회지
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• 제47권11호
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• pp.728-733
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• 2009

Cu based amorphous ($Cu_{54}Zr_{22}Ti_{18}Ni_{6}$) powders were deposited onto Al 6061 substrates by cold spray process with different powder preheating temperatures (below glass transition temperature: $350^{\circ}C$, near glass transition temperature: $430^{\circ}C$ and near crystallization temperature: $500^{\circ}C$). The microstructure and macroscopic properties (hardness, wear and corrosion) of Cu based amorphous coating layers were also investigated. X-ray diffraction results showed that cold sprayed Cu based amorphous coating layers of $300{\sim}350{\mu}m$ thickness could be well manufactured regardless of powder preheating temperature. Porosity measurements revealed that the coating layers of $430^{\circ}C$ and $500^{\circ}C$ preheating temperature conditions had lower porosity contents (0.88%, 0.93%) than that of the $350^{\circ}C$ preheating condition (4.87%). Hardness was measured as 374.8 Hv ($350^{\circ}C$), 436.3 Hv ($430^{\circ}C$) and 455.4 Hv ($500^{\circ}C$) for the Cu based amorphous coating layers, respectively. The results of the suga test for the wear resistance property also corresponded well to the hardness results. The critical anodic current density ($i_{c}$) according to powder preheating temperature conditions of $430^{\circ}C$, $500^{\circ}C$ was lower than that of the sample preheated at $350^{\circ}C$, respectively. The higher hardness, wear and corrosion resistances of the preheating conditions of near $T_{g}$ and $T_{x}$, compared to the properties of below $T_{g}$, could be well explained by the lower porosity of coating layer.