• 한국자기학회지
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• 제12권5호
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• pp.184-188
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• 2002

수직자기이방성을 가지는 Cu/Ni/Cu(002)/Si(100) 자성박막을 전자빔 증발법을 이용하여 초고진공에서 증착 하였다. 증착 시 RHEED로 측정 한 결과 실리콘 기판 위에 자성박막이 적층성장되었음을 확인하였다. 이러한 Cu/Ni/Cu(001)/Si(100) 자성박막에 1 MeV C 이온을 이온선량 2$\times$$10^{16}$ ions/$\textrm{cm}^2$로 조사한 후 MOKE로 자기이력곡선을 측정한 결과 이온 조사에 의해 자화용이축이 수직에서 수평방향으로 변화되었음을 확인하였다 포항 방사광가속기를 이용하여 X-선 반사도와 Grazing Incident X-ray diffraction(GE) 분석을 수행한 결과 첫 번째 Cu층과 Ni층 사이의 계면은 이온 조사 후 거칠기는 증가하였으나, Cu와 Ni의 전자밀도의 대비는 더욱 명확해졌다. 그리고, 증착 후 Cu와 Ni원자의 격자 상수 차이에 의해 Ni층이 가지고 있었던 strain은 이온 조사 후 완화되었음을 알 수 있었다. 끝으로, 이온조사 시 자성특성 변화와 직접적인 관계가 있는 strain 완화, 계면 혼합층(혹은 새로운 상)등이 생성되는 기구를 탄성충돌 및 비탄성충돌에 의한 열화학적 구동력으로 규명하였다.

• 한국음향학회지
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• 제33권1호
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• pp.1-9
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• 2014

하구와 연안은 육지와의 근접성으로 인해 강이나 하천 등에 의한 퇴적물 공급이 외해에 비해 활발하게 이루어지는 지역으로서 때로는 고농도의 부유퇴적물이 조성되기도 한다. 부유퇴적물은 외부 작용으로부터 쉽게 환경이 변하는 특성을 가지기 때문에 부유물층 탐지 및 연구를 위해 주로 음향 장비를 이용하지만 고농도 부유물 환경에서는 음파감쇠가 심하고, 이로 인해 음파의 이동 거리가 크게 감소한다. 따라서 부유물 환경에 대한 연구를 하기 위해서는 부유물 환경 특성과 주파수 변화에 따른 감쇠계수 특성을 파악하는 것이 매우 중요하다. 본 논문에서는 간이수조 내에서 고령토 가루를 이용하여 다양한 농도의 부유물을 조성한 후, 초음파 대역 (3.5, 5, 7.5 MHz)에 대한 감쇠계수를 측정하였으며, 감쇠계수 모델과 비교하였다. 감쇠계수 모델의 입력인자인 부유물의 평균입자 크기를 다양하게 변화시키며 실측값과 비교한 결과 평균 입자크기 (D50)을 기준으로 약 ${\pm}20%$ 범위 내에서 비교적 일치하였다. 이러한 오차 발생 원인은 부유물은 다양한 크기의 입자들로 구성되어 있으며, 음파 감쇠는 특정주파수에 우세한 영향을 미치는 크기의 입자분포에 영향을 받기 때문으로 판단된다.

• 한국세라믹학회지
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• 제49권5호
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• pp.404-411
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• 2012

The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• 한국결정성장학회지
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• 제13권5호
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• pp.254-259
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• 2003

Sol-gel dip coating법으로 soda lime glass 기판 위에 ATO(antimony-doped tin oxide) 투명전도막을 제조할 때, 기판 위에 형성된 $SiO_2$ barrier 층 및 $N_2$ gas annealing 에 따른 광투과율 및 전기적 특성에 대한 효과를 정량적으로 측정하고, XPS(X-ray photoelectron spectroscopy) 분석을 통해 고찰하였다. $SiO_2$ barrier층을 갖는 glass 기판 위에 코팅된400 nm 두께의 ATO 박막을 질소분위기에서 annealing한 결과, 광 투과율은 84%그리고 전기저항은 약 $5.0\times 10^{-3}\Omega \textrm{cm}$로 측정되었다 XPS 분석결과 이러한 우수한 전기전도성은 $SiO_2$ buffer층이 glass 기판으로부터 Na 이온의 확산을 막아 ATO막 내에 $Na_2SnO_3$ 및 SnO와 같은 2차상 불순물의 형성을 억제하여 막 내부의 Sb의 농도 및 $Sb^{5+}/Sb^{3+}$ 비를 증가시키고, $N_2$ annealing은 $Sb^{5+}$ 도 환원시키지만 $Sn^{4+}$를 환원시키는 효과가 크게 작용하였기 때문으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• 한국산학기술학회논문지
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• 제11권2호
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• pp.409-413
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• 2010

실리콘 기판에 GaN 에피성장을 확인하기 위해, P형 Si(100) 기판 전면에 버퍼층으로 10 nm 두께의 코발트실리사이드를 형성시켰다. 형성된 코발트실리사이드 층을 HF로 크리닝하고, PA-MBE (plasma assisted-molecular beam epitaxy)를 써서 저온에서 500 nm의 GaN를 성막하였다. 완성된 GaN은 광학현미경, 주사탐침현미경, TEM, HR-XRD를 활용하여 특성을 확인하였다. HF 크리닝을 하지 않은 경우에는 GaN 에피택시 성장이 진행되지 않았다. HF 크리닝을 실시한 경우에는 실리사이드 표면의 국부적인 에칭에 의해 GaN성장이 유리하여 모두 GaN $4\;{\mu}m$ 정도의 두께를 가진 에피택시 성장이 진행되었다. XRD로 GaN의 <0002> 방향의 결정성 (crsytallinity)을 $\omega$-scan으로 판단한 결과 Si(100) 기판의 경우 2.7도를 보여 기존의 사파이어 기판 정도로 우수할 가능성이 있었다. 나노급 코발트실리사이드를 버퍼로 채용하여 GaN의 에피성장이 가능할 수 있었다.

• Progress in Superconductivity
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• 제12권2호
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• 한국진공학회지
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• 제11권1호
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• pp.50-58
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• 2002

Si 기판 위에 GaN의 성장은 Si이 사파이어보다 값이 저렴하고, 기존의 Si의 직접회로 공정에 GaN를 쉽게 접목시킬 수 있는 측면에서 다양한 장점이 있다. 그러나, Si은 GaN와의 격자상수와 열팽창계수의 차이가 사파이어보다 크며, 이로 인해 격자부정합에 의한 여러 결함을 발생시킨다. 따라서, Si 기판 위에 고품질의 GaN를 얻기 위해서는 AlN과 같은 완충층을 사용하여 격자부정합에 의한 결함을 줄여야 한다. 본 연구에서는 Si (111) 기판 위에 MOCVD, 스퍼터링과 MOMBE의 3가지 방법으로 결정성이 다른 3가지 유형의 AlN 완충층을 얻은 후, MOCVD법으로 GaN를 증착시켜 각각의 성장특성을 비교하였다. AlN 완충층과 GaN의 격자결합, 완충층의 표면 거칠기가 격자결함에 미치는 영향, 결정성, 성장방향, 결함(공공, 적층결함, 전위) 등을 TEM, XRD를 이용해 비교 분석하였다. AlN완충층의 결정성은 GaN의 성장에 있어 매우 큰 영향을 미치는 것을 확인할 수 있었다. 초기 성장과정에서 MOCVD과 MOMBE 법으로 성장시킨 AlN 완충층은 GaN 초기 성장에서 out-of-plane의 성장방향이 틀어지는 것을 감소시켜 주었다.