• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• 한국재료학회지
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• 제17권10호
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• 한국초전도ㆍ저온공학회논문지
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• 제8권4호
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• pp.8-11
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• 2006

High temperature superconducting coated conductor has various buffer structures on Ni-W alloy. We comparatively studied the growth conditions of a multi buffer layer $(CeO_2/YSZ/CeO_2)$ and a single buffer layer$(CeO_2)$ on textured Ni-W alloy tapes. XRD data showed that the qualities of in-plane and out-of-plane textures of the two type buffer structures were good. Also, we investigated the properties of SmBCO superconducting layer that was deposited on the two type buffer structure. The SmBCO superconducting properties on the single and multi buffer structure showed different critical current values and surface morphologies. FWHM of In-plane and out-of-plane textures were $7.4^{\circ},\;5.0^{\circ}$ in the top CeO2 layer of the multi-buffer layers of $CeO_2/YSZ/CeO_2$, and $7.3^{\circ},\;5.1^{\circ}$ in the $CeO_2$ single buffer layer. $1{\mu}m-thick$ SmBCO superconducting layers were deposited on two type buffer layer. $I_c$ of SmBCO deposited on single and multi buffer were 90 A/cm, 150 A/cm and corresponding $J_c$ were $0.9MA/cm^2,\;1.5MA/cm^2$ at 77K in self-field, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.157-160
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• 2008

Improved properties of second electron emission was evaluated by assemble of 4 inch PDP panel. MgO protection layers were deposited and examined by using both pellets made of extremely pure MgO single crystals and sintered pellets using MgO nano powders. $\gamma$ coefficients higher than 0.11 were obtained from the panel by adopting dopant-controlled MgO single crystals. Especially the MgO layer deposited by sintered pellets made of nano powders showed the higher $\gamma$ coefficients at the operating voltage above 200 volts.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1619-1622
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• 2005

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted d eposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.106-111
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• 2003

Tantalum nitride(TaN) films were deposited by atomic layer deposition(ALD) and plasma assisted atomic layer deposition(PAALD). The deposition of the TaN thin film has been performed using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia($NH_3$) as precursors at temperature of $250^{\circ}C$, where the temperature was proven to be ALD window for TaN deposition from our previous experiments. The PAALD deposited TaN film shows better physical properties than thermal ALD deposited TaN film, due to its higher density$(~11.59 g/\textrm{cm}^3$) and lower carbon(~ 3 atomic %) and oxygen(~ 4 atomic %) concentration of impurities.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.21-24
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• 1998

The properties of ZrN layer deposited by Sputtering system have been investigated in the application of diffusion barrier layer to copper. ZrN layer exhibited a excellent barrier property up to $700^{\circ}$ and higher resistivity. If an excess $O_2$is protected during the process of ZrN deposition, ZrN layer will be possible to use a diffusion barrier layer to copper.