• Conservation Science in Museum
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• v.22
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• pp.41-52
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• 2019

Inner walls of the stone chamber of West Ancient Tomb No. 1 and 2 in Neungsan-ri, Buyeo-gun have been inspected for possible trace of murals. Tomb No.1 has a rough surface finish of the stone wall and no traces of murals was observed in any part of the stone walls except the ceiling part of the main chamber. On the ceiling surface, there is black colored area, which showed same visual characteristics for both the surface and interior upon slight scratch of the surface, suggesting that it may not be a painted layer. In addition, this black material is not artificial stuff like black ink but is confirmed as biotite from X-ray diffraction analysis that is one of the constituents of the stone wall. In case of tomb No. 2, white material, that is confirmed as lime(calcite, CaCO3) by X-ray diffraction analysis, was observed on the wall surface of the east, west and north, suggesting possible existence of murals. The lime layers, however, are located mostly on the entrance of east wall of main chamber and the place of passage whereas they are observed only in lower parts on the other walls. It may have been formed by the inflow of soil and lime from the outside as the form of the lime layer in the east wall corresponds to the traces of soil and lime deposited from the thief pit. Furthermore, the filling material found in the gap between the stone slabs of the four directions and the ceiling was confirmed as clay soil, which is different material from the lime present on the stone wall surface. If the lime layer had been artificially constructed for the purpose of creating murals, it would have been more reasonable to use lime as well in the gap between the stone slabs of the four directions and ceiling. In this regard, we conclude that there are no murals in the Tomb No. 2 in the Neungsan-ri.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.265-273
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• 1997

The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.

• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• The Korean Journal of Petroleum Geology
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• v.4 no.1_2 s.5
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• pp.27-39
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• 1996

In the Cretaceous, the Gulf Coast Basin evolved as a marginal sag basin. Thick clastic and carbonate sequences cover the disturbed and diapirically deformed salt layer. In the Cretaceous the salinities of the Gulf Coast Basin probably matched the Holocene Persian Gulf, as is evidenced by the widespread development of supratidal anhydrite. The major Lower Cretaceous reservoir formations are the Cotton Valley, Hosston, Travis Peak siliciclastics, and Sligo, Trinity (Pine Island, Pearsall, Glen Rose), Edwards, Georgetown/Buda carbonates. Source rocks are down-dip offshore marine shales and marls, and seals are either up-dip shales, dense limestones, or evaporites. During this period, the entire Gulf Basin was a shallow sea which to the end of Cretaceous had been rimmed to the southwest by shallow marine carbonates while fine-grained terrigengus clastics were deposited on the northern and western margins of the basin. The main Upper Cretaceous reservoir groups of the Gulf Coast, which were deposited in the period of a major sea level .rise with the resulting deep water conditions, are Woodbinefruscaloosa sands, Austin chalk and carbonates, Taylor and Navarro sandstones. Source rocks are down-dip offshore shales and seals are up-dip shales. Major trap types of the Lower and Upper Cretaceous include salt-related anticlines from low relief pillows to complex salt diapirs. Growth fault structures with rollover anticlines on downthrown fault blocks are significant Gulf Coast traps. Permeability barriers, up-dip pinch-out sand bodies, and unconformity truncations also play a key role in oil exploration from the Cretaceous Gulf Coast reservoirs. The sedimentary sequences of the major Cretaceous reseuoir rocks are a good match to the regressional phases on the global sea level cuwe, suggesting that the Cretaceous Gulf Coast sedimentary stratigraphy relatively well reflects a response to eustatic sea level change throughout its history. Thus, of the three main factors controlling sedimentation (tectonic subsidence, sediment input, and eustatic sea level change) in the Gulf Coast Basin, sea-level ranks first in the period.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.133-140
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• 2009

$Ta_{2}O_{5}$ thin films were deposited by RF magnetron sputtering method under various RF power, substrates and oxygen partial pressure. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 310$\sim$1239 nm. Also, transmittance spectra of the films were measured by UV -Vis spectrophotometer in the range of 300$\sim$1000 nm. From these data, thickness of $Ta_{2}O_{5}$ and surface layer were analyzed and changes of magnitude and shape of dispersion of optical constants according to fabricated conditions were measured. Also, to evaluate thickness and optical constants data analyzed by Tauc-Lorentz dispersion formula, the measured and analyzed transmittance spectra were compared. In result of the comparison, two spectra were in good agreement each other. Accordingly, it indicates that our ellipsometric analysis is valid.

• Korean Journal of Ichthyology
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• v.13 no.3
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• pp.166-172
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• 2001

Parental care of eggs of Chromis fumea (Tanaka) was observed by Skin Scuba gear in August 1995 off Cheju Island. The eggs and larval development were observed in the laboratory at Pukyong National University, Pusan. Eggs were deposited on a flat surface of hard substratum and formed a plain sheet of one layer of eggs. Males showed parental care of the eggs by hovering over the nest and attacking other fishes that approached the nest. The spawned eggs were transparent, elliptical in shape and measured 0.73~0.88 mm in long axis and 0.50~0.56 mm in short axis. An analysis by T-test of the long axis of the egg with time showed a significant difference (p<0.01). However, there was no significant difference in short axis with time. Eggs were reared at water temperatures of $23.0{\sim}25.5^{\circ}C$ and took about 4~5 days from embryonic body stage to hatching. The newly hatched larvae were 1.10~1.61 mm in notochord length (NL) had 21 myomeres, has closed mouth but open anus, preanus length was 45.8% of NL. Melanophores were distributed on the occipital region of head, the eye, the peritoneal region, and along the ventral contour. The larvae absorbed the yolk material and oil globule in 3~4 days after hatching and became postlarvae. On the third day after hatching, the larvae had attained 1.9~2.4 mm in NL, had 25 myomeres, and showed rapid growth. By the ninth day after hatching, the larvae had attained 2.9 mm in NL, had an swimbladder in the dorsal margin of ventral region, the preanus length was 37.9% of NL, and their melanophores were enlarged and reduced in number.

• Korean Journal of Ichthyology
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• v.11 no.1
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• pp.46-51
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• 1999

Age, hatching date and growth in length of juvenile Limanda yokohamae were determined by analysis of microstructure in otoliths. Monthly samples were collected by a beach seine in the shallow water off Gaduk-do from January to December, 1998. The juveniles were collected between February and April. Mean total length was $22.6{\pm}1.77\;mm$ ($\pm$SD) in February, $23.6{\pm}3.86\;mm$ in March, and $38.2{\pm}8.38\;mm$ in April. The core of otoliths ranged from 18 to $21\;{\mu}m$ in diameter and the growth increments were deposited concentrically from the hatching mark. The secondary growth layer began to appear at the 48 to 56-th increment. It indicates that L. yokohamae larvae may be completed the metamorphosis at this time of ca. 52 d after hatching, and moved into the shallow water for demersal stage. The hatching date calculated from the number of daily increments was between late November and early January, showing a peak in December. The total length (L, mm) was related to otolith radius (R, ${\mu}m$); L=0.055 R+5.81 ($r^2=0.88$). The growth in total length was represented by the Gompertz growth curve; $L_t=3.39e^{4.51(1-e^{-0.0067t})}$ ($r^2=0.81$). Daily growth rate was 0.35 mm/d at the age of 70 d and increased up to 0.55 mm/d at the age of 120 d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.14-17
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• 1999

Tin oxide films as an anode layer for microbatteries were deposited by using rf magnetron sputtering. Characterization of the films was carried out in terms of working pressure in the range of 5~30 mtorr. Rf power and substrate temperature during deposition were fixed at 2.5W/$\textrm{cm}^2$ and A.T., respectively. The crystal orientation of $SnO_2$films was changed from (110) to (101) or (211) with the increasing working pressure. Refractive index and film density of the films also decreased with the increasing working pressure. The $SnO_2$ thin film formed under optimum conditions was found to have a reversible capacity of 446.9$\mu$Ah/$\textrm{cm}^2$-$\mu\textrm{m}$ and good reversibility when the working pressure was fixed at 10mtorr. As the working pressure decreased, film density increased. It was thought that the capacity of $SnO_2$films increased due to the increase in the amount of active materials which can react with Li electrochemically. Furthermore, cycle characteristics of the anode material was also influenced by film stress.