• Current Optics and Photonics
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• v.1 no.4
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• pp.372-377
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• 2017

We demonstrate that the local resonance of metamaterials can be tuned by the effects of organic thin films under photoexcitation. Tris (8-hydroxyquinolinato) aluminum ($Alq_3$) layers are deposited on metamaterial/silicon hybrid structures. By varying the thickness of the $Alq_3$ layer on the subwavelength scale, the resonant peak of the metamaterial becomes very adjustable, due to the effect of a thin dielectric substrate. In addition, under photoexcitation all the spectral peaks of the resonance shift to higher frequencies. This originates from the reduction of the capacitive response generated inside the gaps of split-ring resonators. The adjustability of the electromagnetic spectrum may be useful for developing optical systems requiring refractive-index engineering and active optical devices.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.514-517
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• 2005

Effects of nitrogen and oxygen annealing on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD), Scanning electron microscope (SEM), photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. Annealing undoped ZnO films grown by ALD at a high temperature above $600^{\circ}C$ improves the crystallinity and enhances W emission but deteriorates the electrical conductivity of the flms. The resistivity of the ZnO film annealed particularly at $800^[\circ}C$ in a nitrogen atmosphere is much higher than that annealed at the same temperature in an oxygen atmosphere.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Nuclear Engineering and Technology
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• v.27 no.1
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• pp.18-24
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• 1995

Characteristics of poly(vinyl alcohol)-poly(methacrylic acid) system (PVA.-PMAA system) for fixation of radioactive contaminant on sand were studied. Dissociation of carboxyl group in PMAA was found to be suppressed by PVA Permeability of sand layer treated with PVA-PMAA solution is directly proportional to the PMAA concentration when the ［PMAA］ is below 0.082 M and the empirical proportional constant (k) is -8.95$\times$10￣$^4$cm$^{5}$ /mole. The change of permeability can be explained by the formation of an intermacromolecular complex between PVA and PMAA The polymer bridge formed on a sand surface combines sand yams more firmly. The PVA-PMAA system is more effective than the PVA system for the fixation of deposited condensational radionuclides.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.12 s.255
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• pp.1211-1217
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• 2006

This study is focused on oxidation prevention of STS430, which is generally used as solid oxide fuel cell(SOFC) interconnect at intermediate operating temperatures with oxidation-proof coatings. Inconel, $La_{0.6}Sr_{0.4}CoO_3(LSCo)$ and $La_{0.6}Sr_{0.4}CoO_3(LSCr)$ were chosen as coating materials. Using a radio frequency magnetron sputtering method, each target material was deposited as thin film on STS430 and was analyzed to find out favorable conditions. In this study, LSCr-coated STS430 can reduce electrical resistance to 1/3 level, compared with uncoated STS430. Also, long-term durability test at $700^{\circ}C$ for 1000 hours tells that LSCr thin layer performs an important role to prohibit serious degradations. Superior oxidation-resistant characteristic of LSCr-coated STS430 is attributed to the inhibition of spinel structure formation such as $MnCr_2O_4$.

• Solar Energy
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• v.8 no.1
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.430-430
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• 2013

Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and $1{\sim}10{\mu}m$ length) were grown during oxidizing Cu foil at $450^{\circ}C$ for 24 h. Besides, 3-layersetched graphene was deposited on Cu foil at $1,000^{\circ}C$ using a feedstock of $CH_4$/$H_2$ mixed gas in CVD system. A structure of Ni/Au electrode + CuO nanowires + etched graphene was fabricated, afterward. Finally, field effect properties of the device was revealed and compared with individual devices of just nanowires and just graphene.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.675-675
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• 2013

CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.

• Membrane Journal
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• v.14 no.1
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• pp.66-74
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• 2004

Total resistance of membrane in a micro-filtration system using a metal membrane was mainly attributed to the permeate resistance of cake layer($R_c$), which was formed by deposited particles from the physico-chemical interactions of solids on membrane surface. Intermittent back ozonation was highly effective than the air backwashing for fouling reduction. As far the operational effect, under same ozone injection, the increase of gas flow-rate was more favorable than the increase of injection time far the recovery of permeation flux. As the filtration time was longer, the effect of flux recovery by intermittent back-ozonation decreased. Therefore, it is preferable to operate membrane cleaning before the foulant is consolidated on membrane surface.

• Journal of the Korean institute of surface engineering
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• v.20 no.3
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• pp.118-126
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• 1987

The Zn-Al composite electroplating was studied by using chloride zinc bath containing metal hydroxides $(Zn(OH)_2,\;Al(OH)_3))$ and aluminium powder. The size of Al powder codeposited in the beaker bath with Al powder of-400 mesh was under 10${\mu}m$. The Zn-Al composite was electro-deposited at 40$^{\circ}C$ in the ranges of current density of 5-50 A/$dm^2$ in the flowing electrolyte. The content of aluminium particles codeposited increased slightly with increasing flow rate of electrolyte from 0.5 m/sec to 1.0 m/sec, and decreased with increasing current density from 5 A/$dm^2$ to 50 A/$dm^2$. The content of aluminium particles codeposited by using the electrolyte containing zinc hydroxide(0.1M) was 2~4 wt%. The Al powder was codeposited mainly near the surface layer of the electrodeposits. The dissolution rate of aluminium particles in the electrolyte containing 0.1M $Zn(OH)_2$ and Boric acid was 0.41 g/l. day in comparison with 1.5 g/l. day dissolution rate in pure chloride bath.