• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Korean Journal of Optics and Photonics
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• 제13권3호
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Journal of the Korea Academia-Industrial cooperation Society
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• 제14권4호
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• pp.2037-2042
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• 2013

A TCO-less palladium (Pd) catalytic layer on the glass substrate was assessed as the counter electrode (CE) in a dye sensitized solar cell (DSSC) to confirm the stability of Pd with the $I^-/I_3{^-}$electrolyte on the DSSC performance. A 90nm-thick Pd film was deposited by a thermal evaporator. Finally, DSSC devices of $0.45cm^2$ with glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass structure was prepared. We investigated the microstructure and photovoltaic property at 1 and 12 hours after the sample preparation. The optical microscopy, field emission scanning electron microscopy (FESEM), cyclic voltammetry measurement (C-V), and current voltage (I-V) were employed to measure the microstructure and photovoltaic property evolution. Microstructure analysis showed that the corrosion by reaction between the Pd layer and the electrolyte occurred as time went by, which led the decrease of the catalytic activity and the efficiency. I-V result revealed that the energy conversion efficiency after 1 and 12 hours was 0.34% and 0.15%, respectively. Our results implied that we might employ the other non-$I^-/I_3{^-}$electrolyte or the other catalytic metal layers to guarantee the long term stability of the DSSC devices.

• Journal of the Korean Vacuum Society
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• 제16권5호
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• pp.377-382
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• 2007

In this study, we report the synthesis of the single-walled carbon nanotubes(SWCNTs) using laminated catalyst(Al/Fe/Al) layer deposited by sputter on Si(001). SWCNTs are grown by thermal chemical vapor deposition (TCVD) method. As the results of scanning electron microscopy(SEM), high resolution transmission electron microscopy(HR-TEM) and Raman spectroscopy, we confirmed the SWCNTs bundles with narrow diameter distribution of $1.14{\sim}1.32\;nm$ and average G&D ratio of 22.76. Compare to the sample having Fe/Al catalyst layer, it can be proposed that the top-aluminum incorporated with iron catalyst plays an important role in growing process of CNTs as a agglomeration barrier of the Fe catalyst. Thus, we suggest that a proper quantity of aluminium metal incorporated in Fe catalyst induce small and uniform iron catalysts causing SWCNTs with narrow diameter distribution.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.31.1-31.1
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• 2009

Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

• The Journal of the Korea institute of electronic communication sciences
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• 제15권4호
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Membrane Journal
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• 제12권1호
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• pp.41-50
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• 2002

The streaming potential generated by the electrokinetic flow within electric double layer of charged microchannel is applied to determine the zeta potential of hollow-fiber membrane pore by using the general Helmholtz-Smoluchowski equation. The streaming potential is know to provide a useful real-time information on the surface property and the interaction between pore and particles in actual situations and physicochemical conditions. The influence of physicochemical parameters upon the filtration with hollow-fibers has been examined with an in-situ and simultaneously monitoring the streaming potential as well as permeate flux. In particular, the present study examined an experimental method to identify the effect of cake layer which can vary according to the axial position of a hollow-fiber and the progress of membrane fouling by measuring the position-dependent streaming potential. As the latex concentration increases, the permeate flux decreased but the streaming potential increased. The growth of cake layer has been mire developed with increasing latex concentration, however, the effect of surface charges of latexes deposited on the membrane surface leads to increase the streaming potential. With increasing ionic concentration of KCI, both the permeate flux and the streaming potential decrease. The increase of ionic concentration provides a compact cake layer due to the shrinkage of Debye length and the decreased streaming potential results from the weakened ionic flows owing to a thin diffusive double layer.

• Journal of the Institute of Electronics and Information Engineers
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• 제52권7호
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• pp.33-39
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• 2015

In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• 제9권1호
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• pp.30-39
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• 2004

In order to understand the environmental impact of marine cage fish farms, we measured the vertical fluxes of particulate to the sediment, the distribution of organic carbon in core samples, sediment oxygen consumption rate (SOD), and macrobenthos with increasing distance from a fish cage in Miruk island located in Tongyong. The experiment was performed in August 2003. Measured values gradually decreased with distance, indicating that the organic matter in the sediment derived from the fish farm. The dominant macrobenthos species were Tharyx mulifilis, Lumbrineris longifolia, Sigambra tentaculata, and Capitella capitata, occupying 88% of the total population. Capirella capirata, an opportunistic polychaete species, were especially abundant between 0 to 5 m radius range. The estimated impact regions of organic matter enrichment based on sediment consilmption rates and compositions of macrobenthos were in good agreement. Most organic matter derived from the fish farm was deposited within a 10 m radius and then dispersed horizontally to nearby (at least 50 m) surface sediment. The vertical organic carbon fluxes to the sediment at the fish farm were higher by a factor of two than those outside the area. The remineralization organic carbon in the upper sediment layer was estimated to be 50% (1.07 g C m$^{-2}$ day$^{-1}$ ) at the fish farm. In contrast, outside the area, 30% (0.30 g C m$^{-2}$ day$^{-1}$ ) of organic carbon was recycled and the remaining 70% was deposited to the deep sediment layer.