• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• v.14
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• pp.349-370
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• 2000

The environmental problems such as global climate change, global waming, ozone depletion, environmental pollution have been caused by the rapid economic growth, increasing in use of fossil fuels for industrialization and scientific technology development. Especially human activities are significantly altering the atomosphere's composition and its radiative properties. To Stabilize greenhouse gas concentrations in the atmosphere at a level that would prevent dangerous anthropogenic interference with the climate system, the international community adopted the UN Framework Convention on Climate Change in 1992 and Kyoto protocol in 1997. Also to protect ozone layer the international community adopted the Vienna Convention for the Protection of the Ozone Layer in 1985, and the Montreal Protocol on Substances that Deplete the Ozone Layer in 1987. To achieve global environmental objectives, some multilateral environmental agreements includes trade regulation. For example, Montreal Protocol includes the provisions to regulate the world trade of the sudstances which might destroy ozone layer. However Kyoto Protocol has no provisions to regulate trade and is not in force yet. Although there is no trade regulation article in Kyoto Protocol, the international world trade will be influenced by limitation and reduction of CO2 and strengthening the CO2 emission standard for import good. For example Korean car industy agreed with EU to reduce CO2 emission from new passenger car and Korean Semiconductor industry agreed with WSC(World Semiconductor Council) to reduce PFCs in 1999.

• Corrosion Science and Technology
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• v.11 no.4
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• pp.141-150
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• 2012

Stress corrosion cracks in Alloy 600 compact tension specimens tested at $325^{\circ}C$ in a simulated primary water environment of pressurized water reactor were analyzed by analytical transmission electron microscopy and secondary ion mass spectroscopy (SIMS). From a fine-probe chemical analysis, oxygen was found on the grain boundary just ahead of the crack tip, and chromium oxides were precipitated on the crack tip and the grain boundary attacked by the oxygen diffusion, leaving a Cr/Fe depletion (or Ni enrichment) zone. The oxide layer inside the crack was revealed to consist of a double (inner and outer) layer. Chromium oxides existed in the inner layer, with NiO and (Ni,Cr) spinels in the outer layer. From the nano-SIMS analysis, oxygen was detected at the locations of intergranular chromium carbides ahead of the crack tip, which means that oxygen diffused into the grain boundary and oxidized the surfaces of the chromium carbides. The intergranular chromium carbide blunted the crack tip, thereby suppressing the crack propagation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.581-593
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• 2022

As energy depletion and environmental pollution problems are intensified, research has been conducted actively on alternative energy sources, an eco-friendly and continuous available energy conversion system. So has been organic solar cells whose efficiency is improved to 18.32%. The photoactive layer inside the solar cell is composed of a donor and a acceptor, and the combination of materials capable of effectively exchanging electrons greatly affects the efficiency of the organic solar cell. Accordingly, various researches have been conducted to improve the efficiency, and the maximum efficiency could be achieved by a solar cell with high carrier generation and low charge recombination characteristics through the introduction of a non-fullerene acceptor and material reconstruction. Organic solar cells are still difficult to commercialize due to their efficiency limitations and light stability, but if a photoactive layer consisting of a donor capable of efficiently absorbing long-wavelength light and an acceptor capable of forming an appropriate energy level is designed, the efficiency of the organic solar cell will reach 20%.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.37 no.6
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• pp.1001-1008
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• 2017

This study was to evaluate the stream depletion rate from groundwater pumping with varying stream-well distance, aquifer transmissivity, storage coefficient, leakage coefficient, streambed hydraulic conductance using the Zlotnik and Tartakovsky analytical solution which considers a two-layer leaky aquifer-stream-well system. For the hydraulic conditions applied in this study, the streambed hydraulic conductance and the aquitard leakage coefficient were assessed to have a dominant influence on the stream depletion rate. In order to evaluate the applicability of Zlotnik and Tartakovsky analytical solution ignoring the change in the drawdown in the lower aquifer and applying the fixed head boundary condition, the solution was compared with Hunt analytical solution derived from the more practical conditions simultaneously taking into account the drawdown changes in the upper and lower aquifers. As a result, the Zlotnik and Tartakovsky analytical solution is suitable for predicting short-term effects of less than one year in the pumping period, and when the stream depletion factor (SDF) is greater than 2,500 days, or when the product of the leakage coefficient and the stream-well distance is less than 10 cm/s.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.40 no.6
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• pp.555-561
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• 2020

In this study, the applicability of Hunt's analytical solution for a two-layered leaky aquifer system, which was developed to estimate stream depletion due to the groundwater pumping of the upper shallow aquifer, was evaluated. The 5-year averaged stream depletions were estimated using Hunt's analytical solution for various combinations of hydraulic characteristic values such as transmissivity, storage coefficient of the two aquifers, interlayer leakage coefficient, stream-well distance, hydraulic conductivity of the streambed, and stream width. Through comparison with the numerical solution accurately simulated with a MODFLOW groundwater flow model, the analytical solution derived by regarding the stream width as a point was evaluated. It was found that the error in the stream depletion calculated by the analytical solution can be reduced to less than 0.05 when the stream-well distance is greater than the stream width or when the stream depletion factor (SDF) is more than about 3,000 days. In addition, when the streambed hydraulic conductivity is less than 1 m/d, the hydraulic diffusion coefficient of the lower aquifer layer is less than 100 ㎡/d, the hydraulic diffusion coefficient ratio of the upper and lower aquifer layers is 5 or more, and the leakage coefficient between the layers is less than 0.0004 m/d, the overall analytical solutions were overestimated compared with the numerical solutions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.3
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• pp.46-52
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• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.133-133
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• 2003

최근에 강유전체 매체와 원자력 현미경 (Atomic Force Microscopy, AFM)을 이용한 초고밀도 정보 저장 장치에 대한 연구가 활발히 진행되고 있다. 이와 아울러 나도 크기의 도메인에 대하 연구에 있어서 PZT 박막의 분극 방향에 따른 SrRuO$_3$의 저항 변화를 AFM 탐침을 이용하여 감지하는 방법을 제안하였다. 본 연구에서는 Metal tip/semiconductor/barrier oxide/ferroelectric 구조에서 강유전체 분극에 의한 저항 변화의 가능성을 실험하고자, 이와 등가 구조인 Pt tip/n-Si/SiO$_2$ 구조에서 Pt 탐침과 반도체 층 사이의 I-V 특성을 측정함으로써, 게이트 전압에 따른 반도체 층의 저항변화에 대해서 분석해 보았다. 그 결과 게이트 전압에 따라서 과밀 지역 (accumulation layer)과 공핍 지역 (depletion layer)이 형성됨에 따라서 반도체 층의 정항이 변하여 I-V 특성이 변하게 됨을 관찰하였으며, 이 결과로부터 분극 방향에 따라서도 반도체 층의 저항이 변할 수 있음을 알 수 있었다.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.