• Title/Summary/Keyword: density threshold

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Detecting Anomalous Trajectories of Workers using Density Method

  • Lan, Doi Thi;Yoon, Seokhoon
    • International Journal of Internet, Broadcasting and Communication
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    • v.14 no.2
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    • pp.109-118
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    • 2022
  • Workers' anomalous trajectories allow us to detect emergency situations in the workplace, such as accidents of workers, security threats, and fire. In this work, we develop a scheme to detect abnormal trajectories of workers using the edit distance on real sequence (EDR) and density method. Our anomaly detection scheme consists of two phases: offline phase and online phase. In the offline phase, we design a method to determine the algorithm parameters: distance threshold and density threshold using accumulated trajectories. In the online phase, an input trajectory is detected as normal or abnormal. To achieve this objective, neighbor density of the input trajectory is calculated using the distance threshold. Then, the input trajectory is marked as an anomaly if its density is less than the density threshold. We also evaluate performance of the proposed scheme based on the MIT Badge dataset in this work. The experimental results show that over 80 % of anomalous trajectories are detected with a precision of about 70 %, and F1-score achieves 74.68 %.

Measurement of a Threshold Initiation Carrier Density for a Reduction in Gas Breakdown Voltage

  • Park, Hyunho;Kim, Youngmin
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2421-2424
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    • 2018
  • A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

Low Threshold Current Density and High Efficiency Surface-Emitting Lasers with a Periodic Gain Active Structure

  • Park, Hyo-Hoon;Yoo, Byueng-Su
    • ETRI Journal
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    • v.17 no.1
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    • pp.1-10
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    • 1995
  • We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.

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Threshold Subsoil Bulk Density for Optimal Soil Physical Quality in Upland: Inferred Through Parameter Interactions and Crop Growth Inhibition

  • Cho, Hee-Rae;Han, Kyung-Hwa;Zhang, Yong-Seon;Jung, Kang-Ho;Sonn, Yeon-Kyu;Kim, Myeong-Sook;Choi, Seyeong
    • Korean Journal of Soil Science and Fertilizer
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    • v.49 no.5
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    • pp.548-554
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    • 2016
  • Optimal range of soil physical quality to enhance crop productivity or to improve environmental health is still in dispute for the upland soil. We hypothesized that the optimal range might be established by comparing soil physical parameters and their interactions inhibiting crop growth. The parameter identifying optimal range covered favorable conditions of aeration, permeability and root extension. To establish soil physical standard two experiments were conducted as follows; 1) investigating interactions of bulk density and aeration porosity in the laboratory test and 2) determining effects of soil compaction and deep & conventional tillage on physical properties and crop growth in the field test. The crops were Perilla frutescens, Zea mays L., Solanum tuberosum L. and Secale cereael. The saturated hydraulic conductivity, bulk density from the root depth, root growth and stem length were obtained. Higher bulk density showed lower aeration porosity and hydraulic conductivity, and finer texture had lower threshold bulk density at 10% aeration bulk density. Reduced crop growth by subsoil compaction was higher in silt clay loam compared to other textures. Loam soil had better physical improvement in deep rotary tillage plot. Combined with results of the present studies, the soil physical quality was possibly assessed by bulk density index. Threshold subsoil bulk density as the upper value were $1.55Mg\;m^{-3}$ in sandy loam, $1.50Mg\;m^{-3}$ in loam and $1.45Mg\;m^{-3}$ in silty clay loam for optimal soil physical quality in upland.

Correlation between the Pressure Pain Threshold and Sonography and Spontaneous Electrical Activity in Myofascial Trigger Points

  • Kim, Hyun-Jin;Kim, Myung-Hoon;Kim, Su-Hyon;Oh, Seok;Choi, Ji-Ho;Kim, Tae-Youl
    • The Journal of Korean Physical Therapy
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    • v.22 no.3
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    • pp.17-21
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    • 2010
  • Purpose: This study was designed to investigate possibilities for quantitative analysis using the electromyography and sonography. For better understanding, we evaluated the correlation between the pressure pain threshold and sonography, spontaneous electrical activity in trigger points located in the upper trapezius muscle. Methods: Thirty three active subjects volunteered to participate in this study (n=33). They had a palpable taut band, exquisite spot tenderness of a nodule in a taut band, spontaneous pain, referred pain, jump sign, local twitch response, and a painful limit to full stretch range of motion. We measured Pressure pain threshold, density, white area index, root mean square, and reaction. Pearson’s correlation coefficient was calculated to estimate the relationship between the pressure pain threshold and other variables including density, white area index, root mean square, and reaction time. Results: There were significant correlations between pressure pain threshold and density (r=-0.75, p<0.01), and between pressure pain threshold and white area index (r=-0.74, p<0.01). A significant correlations between pressure pain threshold and root mean square (r=-0.59, p<0.01). The significant correlation was found between pressure pain threshold and reaction time (r=-0.64, p<0.01). Conclusion: These should indicate whether quantitative analysis can be done using the characteristics of electromyography and sonography.

Development of High-Power AlGaAs SCH-SQW Laser Diode (고출력 AlGaAs SCH-SQW 레이저 다이오드 개발)

  • 손진승;계용찬;권오대
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.10
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    • pp.27-32
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    • 1993
  • Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.

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Crop Field Extraction Method using NDVI and Texture from Landsat TM Images

  • Shibasaki, Ryosuke;Suzaki, Junichi
    • Proceedings of the KSRS Conference
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    • 1998.09a
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    • pp.159-162
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    • 1998
  • Land cover and land use classification on a huge scale, e.g. national or continental scale, has become more and more important because environmental researches need land cover: And land use data on such scales. We developed a crop field extraction method, which is one of the steps in our land cover classification system for a huge area. Firstly, a crop field model is defined to characterize "crop field" in terms of NDVI value and textual information Textual information is represented by the density of straight lines which are extracted by wavelet transform. Secondly, candidates of NDVI threshold value are determined by "scale-space filtering" method. The most appropriate threshold value among the candidates is determined by evaluating the line density of the area extracted by the threshold value. Finally, the crop field is extracted by applying level slicing to Landsat TM image with the threshold value determined above. The experiment demonstrates that the extracted area by this method coincides very well with the one extracted by visual interpretation.

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Improved Reliability-Based Iterative Decoding of LDPC Codes Based on Dynamic Threshold

  • Ma, Zhuo;Du, Shuanyi
    • ETRI Journal
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    • v.37 no.4
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    • pp.736-742
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    • 2015
  • A serial concatenated decoding algorithm with dynamic threshold is proposed for low-density parity-check codes with short and medium code lengths. The proposed approach uses a dynamic threshold to select a decoding result from belief propagation decoding and order statistic decoding, which improves the performance of the decoder at a negligible cost. Simulation results show that, under a high SNR region, the proposed concatenated decoder performs better than a serial concatenated decoder without threshold with an Eb/N0 gain of above 0.1 dB.

Construction of Optimal Concatenated Zigzag Codes Using Density Evolution with a Gaussian Approximation

  • Hong Song-Nam;Shin Dong-Joon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.9C
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    • pp.825-830
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    • 2006
  • Capacity-approaching codes using iterative decoding have been the main subject of research activities during past decade. Especially, LDPC codes show the best asymptotic performance and density evolution has been used as a powerful technique to analyze and design good LDPC codes. In this paper, we apply density evolution with a Gaussian approximation to the concatenated zigzag (CZZ) codes by considering both flooding and two-way schedulings. Based on this density evolution analysis, the threshold values are computed for various CZZ codes and the optimal structure of CZZ codes for various code rates are obtained. Also, simulation results are provided to conform the analytical results.

Interface Trap Effects on the Output Characteristics of GaN Schottky Barrier MOSFET (GaN Schottky Barrier MOSFET의 출력 전류에 대한 계면 트랩의 영향)

  • Park, Byeong-Jun;Kim, Han-Sol;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.271-277
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    • 2022
  • We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the Nit distribution using TCAD simulation. As interface trap number density (Nit) increased, the threshold voltage increased while the drain current density decreased. Under Nit=5.0×1010 cm-2 condition, the threshold voltage was 3.2 V for VDS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the Nit distribution type, there was an increase in the subthreshold swing (SS) following an increase in Nit. Under U-shaped Nit distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Qf) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.