• Title/Summary/Keyword: dense morphology

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The Effects of Electrode Distance on the Formation of $(ZnS)_{1-x}(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method (R.F. Sputtering 방법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}(SiO_2)_x$ 보호막 형성에 미치는 전극거리의 영향)

  • Lee, Jun-Ho;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1245-1251
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    • 1999
  • Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

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Yttrium-Stabilized Zirconia Particles Prepared Using Electro-dialysis of (Zr,Y)OCl2 Aqueous Solution

  • Chang, Myung Chul
    • Journal of the Korean Ceramic Society
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    • v.51 no.5
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    • pp.466-471
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    • 2014
  • Hydrous zirconia particles were prepared from $ZrOCl_2$ aqueous solution using an electro-dialysis [ED] process. For the preparation of $(Zr,Y)(OH)_4$ precipitates, 3 mol% $YCl_3$ was added into $ZrOCl_2$ aqueous solution. During the hydrolysis of 0.5 mol/L $(Zr,Y)OCl_2$ solution at $90^{\circ}C$ a slurry solution was obtained. The ED process was used for the removal of chlorine from the slurry solution. Two kinds of slurry solution were sampled at the beginning and end of the ED process. The morphology of hydrous zirconia particles in the solution was observed using an inverted optical microscope and an FE-SEM. The hydrous zirconia particles were nano-crystalline, and easily coagulated with drying. Yttrium stabilized zirconia [YSZ] powder could be obtained by the calcination of $(Zr,Y)(OH)_4$ precipitates prepared from a $(Zr,Y)OCl_2$ solution by the ED process. The coagulated dry powders were shaped and sintered at $1500^{\circ}C$ for 2 h. The sintered body showed a dense microstructure with uniform grain morphology.

The electrical and optical properties of transparent ZnO:Al films using HCl wet chemical etching (HCL 습식 에칭에 의한 ZnO:Al 투명전도막의 전기적, 광학적 특성)

  • Yoo, Jin-Su;Lee, Jeong-Chul;Kang, Ki-Hwan;Kim, Seok-Ki;Yoon, Kyung-Hoon;Song, Jin-Soo;Park, I-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.62-65
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    • 2002
  • Transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Coming 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

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The Characteristic Study of Plasma Electrolytic Oxidation in AZ31B Magnesium Alloy

  • Yu, Jae-Yong;Choi, Soon-Don;Yu, Jae-In;Yun, Jae-Gon;Ko, Hoon;Jung, Yeon-Jae
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1746-1751
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    • 2015
  • In this study low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate high voltage PEO drawbacks such as high cost, dimensional deformation and porosity. Low voltage PEO produces a thin coating which causes low corrosion resistance. In order to solve such problem, 0.1~0.6M pyrophosphates were added in a bath containing 1.4M NaOH, and 0.35M Na2SiO3. 70 V PEO was conducted at 25℃ for 3 minutes. Chemical composition, morphology and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg2SiO4, and Mg2O7P2. The morphology of film showed appropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide a good corrosion protection for the AZ31B magnesium alloy.

Physical properties of TiN thin films deposited by grid-assisted magnetron sputtering

  • Jung, Min J.;Nam, Kyung-H.;Han, Jeon-G.;Shaginyan, Leonid-R.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2002.05a
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    • pp.46-46
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    • 2002
  • It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

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Effect of Ammonia on Alignment of Carbon Nanotubes in Thermal Chemical Vapor Deposition (촉매 금속을 이용한 열화학 기상 증착법에서 탄소 나노튜브의 수직배향 합성에 대한 암모니아의 역할)

  • Hong, Sang-Yeong;Jo, Yu-Seok;Choe, Gyu-Seok;Kim, Do-Jin;Kim, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.697-702
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    • 2001
  • Effects of ammonia treatment on the morphologies of the catalytic metal films and carbon nanotubes subsequently synthesized via a thermal chemical vapor deposition method were investigated. An optimally controlled thermo-chemical process of ammonia treatment gave rise to a morphology of a dense distribution of vertically aligned carbon nanotubes. $NH_3$ treatment is a crucial key process to obtain vertically aligned carbon nanotubes. However, it was realized by a simple $NH_3$ treatment during synthesis at temperatures of $800-900^{\circ}C$ without any extra process. The structure and morphology of carbon nanotubes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy.

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Effect of H2S Concentration and Sulfurization Temperature on the Properties of Cu2ZnSnS4 Thin Films

  • Arepalli, Vinaya Kumar;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.25 no.12
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    • pp.708-712
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    • 2015
  • This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

Preparation of Composite Membranes of Dense PAA-Poly(BMA-co-MMA) IPN Supported on Porous and Crosslinked Poly(BMA-co-MMA) Sublayer and Their Pervaporation Characteristics

  • Kim, Sung-Chul;Lim, Byung-Yun
    • Macromolecular Research
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    • v.11 no.3
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    • pp.163-171
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    • 2003
  • For the pervaporation of water-ethanol mixtures, new composite membranes having poly(acrylic acid)-poly (butyl methacrylate-co-methyl methacrylate) interpenetrati ng polymer network [PAA-P(BMA-co-MMA) IPN] skin layer supported on porous and crosslinked poly(BMA-co-MMA) were prepared. The morphology of the sub-layer of the composite membrane prepared in the presence of 60 wt% solvent showed cellular structure, on the other hand that of sublayer prepared in the presence of 70 wt% solvent presented very porous interconnected pore structure with macrovoids. Permeation rates of the composite membranes were largely influenced by the morphology of the sublayer. Separation factors increased with the increase of the degree of crosslinking of the PAA network. It was found that permeation rates could be increased by introducing anionic charges on carboxyl groups of the PAA. The permeation rate changes of the PAA-P(BMA-co-MMA) IPN composite membranes according to the feed compositions showed quite similar pattern with the swelling behavior in water-ethanol mixtures.

Characterization of structural properties of CNTs grown by ICP-CVD (ICP-CVD 방법을 이용한 탄소나노튜브의 제작 및 물성분석)

  • Chang, Seok-Mo;Kim, Young-Do;Park, Chang-Kyun;Uhm, Hyun-Seok;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1533-1535
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    • 2002
  • Carbon nanotubes (CNTs) were grown with high density on a large area of Ni-coated silicon oxide substrates by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) of $C_2H_2$ at temperatures ranging from 600 to $700^{\circ}C$. The Ni catalyst was formed using an RF magnetron sputtering system with varying the operating pressure and exposure time of $NH_3$ plasma. The surface morphology of nickel catalyst films and CNTs was examined by SEM and AFM. The graphitized structure of CNTs was confirmed by Ramman spectra, SEM, and TEM. The growth of CNTs was observed to be strongly influenced by the surface morphology of Ni catalyst, which depended on the pre-treatment time and growth temperature. Dense CNTs with uniform-sized grains were successfully grown by ICP-CVD.

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The fabrication of textured ZnO:Al films using HCI wet chemical etching (후 식각법을 이용한 Textured ZnO:Al 투명전도막 제조)

  • Yoo, Jin-Su;Lee, Jeong-Chul;Kang, Ki-Hwan;Kim, Seok-Ki;Yoon, Kyung-Hoon;Song, Jin-Soo;Park, I-Jun
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1482-1484
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    • 2002
  • Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

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