Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Characterization of structural properties of CNTs grown by ICP-CVD

ICP-CVD 방법을 이용한 탄소나노튜브의 제작 및 물성분석

  • Chang, Seok-Mo (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Young-Do (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Chang-Kyun (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University)
  • 장석모 (한양대학교 전자전기제어계측공학과) ;
  • 김영도 (한양대학교 전자전기제어계측공학과) ;
  • 박창균 (한양대학교 전자전기제어계측공학과) ;
  • 엄현석 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2002.07.10
Download PDF
⟨ Previous Next ⟩

Abstract

Carbon nanotubes (CNTs) were grown with high density on a large area of Ni-coated silicon oxide substrates by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) of $C_2H_2$ at temperatures ranging from 600 to $700^{\circ}C$. The Ni catalyst was formed using an RF magnetron sputtering system with varying the operating pressure and exposure time of $NH_3$ plasma. The surface morphology of nickel catalyst films and CNTs was examined by SEM and AFM. The graphitized structure of CNTs was confirmed by Ramman spectra, SEM, and TEM. The growth of CNTs was observed to be strongly influenced by the surface morphology of Ni catalyst, which depended on the pre-treatment time and growth temperature. Dense CNTs with uniform-sized grains were successfully grown by ICP-CVD.

Keywords