• The Plant Pathology Journal
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• v.33 no.2
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• pp.193-205
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• 2017

Histone methylation plays important roles in regulating chromatin dynamics and transcription in eukaryotes. Implication of histone modifications in fungal pathogenesis is, however, beginning to emerge. Here, we report identification and functional analysis of a putative JmjC-domain-containing histone demethylase in Magnaporthe oryzae. Through bioinformatics analysis, we identified seven genes, which encode putative histone demethylases containing JmjC domain. Deletion of one gene, MoJMJ1, belonging to JARID group, resulted in defects in vegetative growth, asexual reproduction, appressorium formation as well as invasive growth in the fungus. Western blot analysis showed that global H3K4me3 level increased in the deletion mutant, compared to wild-type strain, indicating histone demethylase activity of MoJMJ1. Introduction of MoJMJ1 gene into ${\Delta}Mojmj1$ restored defects in pre-penetration developments including appressorium formation, indicating the importance of histone demethylation through MoJMJ1 during infection-specific morphogenesis. However, defects in penetration and invasive growth were not complemented. We discuss such incomplete complementation in detail here. Our work on MoJMJ1 provides insights into H3K4me3-mediated regulation of infection-specific development in the plant pathogenic fungus.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Journal of the Korean Society of Safety
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• v.32 no.3
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• pp.15-20
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• 2017

This study presented the strength of the materials and parts for smart distribution board fabrication, and developed a work operation process chart for smart distribution board fabrication. This work operation process chart for smart distribution board fabrication complied with SPS-KEMC regulations, and the applicable range and object are less than 1,000 V and 1,000 Hz for the AC distribution board and less than 1,500 V for the DC distribution board. The power supply is 3 phase 4 wires ($3{\Phi}$ 4W), divided into a single phase circuit and a 3 phase circuit. In addition, the circuit was configured so that the leakage current flowing through the distribution line of the load could be monitored in real time by using the sensor module installed at the rear end of the circuit breaker. Therefore, the administrator can easily find the risk factor of the load since engineer can check the leakage current of each distribution line. In addition, if a leakage current greater than standard value flows, it is possible to generate an alarm against a short circuit and cut off the leakage current. The work operation process chart for the smart distribution board fabrication consists of the following steps: raw and subsidiary materials, sheet metal work, tube making, welding, painting, busbar fabrication, assembly and wiring, product inspection, shipment, etc. Moreover, symbols, ${\Delta}$, ${\nabla}$, ${\bigcirc}$, ${\Rightarrow}$, etc. were used according to the type of work and work progress so that workers can easily understand the progress of the work.

• Journal of Powder Materials
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• v.16 no.1
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• pp.9-15
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• 2009

Amorphization and crystallization behaviors of $Ti_{50}Cu_{50}Ni_{20}Al_{10}$ powders during high-energy ball milling and subsequent heat treatment were studied. Full amorphization obtained after milling for 30 h was confirmed by X-ray diffraction and transmission electron microscope. The morphology of powders prepared using different milling times was observed by field-emission scanning electron microscope. The powders developed a fine, layered, homogeneous structure with prolonged milling. The crystallization behavior showed that the glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 691,771 and 80 K, respectively. The isothermal transformation kinetics was analyzed by the John-Mehn-Avrami equation. The Avrami exponent was close to 2.5, which corresponds to the transformation process with a diffusion-controlled type at nearly constant nucleation rate. The activation energy of crystallization for the alloy in the isothermal annealing process calculated using an Arrhenius plot was 345 kJ/mol.

• The Korean Journal of Physiology and Pharmacology
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• v.16 no.1
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• pp.31-36
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• 2012

The receptor activator of NF-${\kappa}B$ ligand (RANKL) signal is an activator of tumor necrosis factor receptor-associated factor 6 (TRAF6), which leads to the activation of NF-${\kappa}B$ and other signal transduction pathways essential for osteoclastogenesis, such as $Ca^{2+}$ signaling. However, the intracellular levels of inositol 1,4,5-trisphosphate ($IP_3$) and $IP_3$-mediated cellular function of RANKL during osteoclastogenesis are not known. In the present study, we determined the levels of $IP_3$ and evaluated $IP_3$-mediated osteoclast differentiation and osteoclast activity by RANKL treatment of mouse leukemic macrophage cells (RAW 264.7) and mouse bone marrow-derived monocyte/macrophage precursor cells (BMMs). During osteoclastogenesis, the expression levels of $Ca^{2+}$ signaling proteins such as $IP_3$ receptors ($IP_3Rs$), plasma membrane $Ca^{2+}$ ATPase, and sarco/endoplasmic reticulum $Ca^{2+}$ ATPase type2 did not change by RANKL treatment for up to 6 days in both cell types. At 24 h after RANKL treatment, a higher steady-state level of $IP_3$ was observed in RAW264.7 cells transfected with green fluorescent protein (GFP)-tagged pleckstrin homology (PH) domains of phospholipase C (PLC) ${\delta}$, a probe specifically detecting intracellular $IP_3$ levels. In BMMs, the inhibition of PLC with U73122 [a specific inhibitor of phospholipase C (PLC)[ and of $IP_3Rs$ with 2-aminoethoxydiphenyl borate (2APB; a non-specific inhibitor of $IP_3Rs$) inhibited the generation of RANKL-induced multinucleated cells and decreased the bone-resorption rate in dentin slice, respectively. These results suggest that intracellular $IP_3$ levels and the $IP_3$-mediated signaling pathway play an important role in RANKL-induced osteoclastogenesis.

• Journal of Advanced Navigation Technology
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• v.6 no.1
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• pp.52-62
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated. The Push-Push oscillator for suppressing fundamental frequency 10 GHz and enhancing 20 GHz has been designed and realized in microstrip configuration on 20 mil thick RT-Duroid(${\varepsilon}_r$=2.52) teflon substrate. Two different types of power combiners, T-junction and Wilkinson, have been considered. Whenever one type of the combiners has been adopted for the output circuit, output power, phase noise and fundamental frequency suppression characteristics of the oscillator have been measured. When the Wilkinson power combiner was used, a maximum output power of 5.67 dBm, a phase noise of -105.5 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -29.33 dBc have been measured. When the T-junction power combiner was used, a maximum output power of -1.17 dBm, a phase noise of -102.2 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -17.84 dBc have been measured.

• The Korean Journal of Physiology and Pharmacology
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• v.20 no.2
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• pp.193-200
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• 2016

Sertraline, a selective serotonin reuptake inhibitor (SSRI), has been reported to lead to cardiac toxicity even at therapeutic doses including sudden cardiac death and ventricular arrhythmia. And in a SSRI-independent manner, sertraline has been known to inhibit various voltage-dependent channels, which play an important role in regulation of cardiovascular system. In the present study, we investigated the action of sertraline on Kv1.5, which is one of cardiac ion channels. The effect of sertraline on the cloned neuronal rat Kv1.5 channels stably expressed in Chinese hamster ovary cells was investigated using the whole-cell patch-clamp technique. Sertraline reduced Kv1.5 whole-cell currents in a reversible concentration-dependent manner, with an $IC_{50}$ value and a Hill coefficient of $0.71{\mu}M$ and 1.29, respectively. Sertraline accelerated the decay rate of inactivation of Kv1.5 currents without modifying the kinetics of current activation. The inhibition increased steeply between -20 and 0 mV, which corresponded with the voltage range for channel opening. In the voltage range positive to +10 mV, inhibition displayed a weak voltage dependence, consistent with an electrical distance ${\delta}$ of 0.16. Sertraline slowed the deactivation time course, resulting in a tail crossover phenomenon when the tail currents, recorded in the presence and absence of sertraline, were superimposed. Inhibition of Kv1.5 by sertraline was use-dependent. The present results suggest that sertraline acts on Kv1.5 currents as an open-channel blocker.

• Journal of Microbiology and Biotechnology
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• v.20 no.2
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• pp.415-424
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• 2010

The purpose of this study was to investigate the relationship between the global regulatory mechanism known as quorum sensing and expression of virulence factors in Escherichia coli O157:87. A nonpolar luxS deletion was introduced into the chromosome of strain CI03J, a human clinical isolate from South Korea, to create the ${\Delta}luxS$ mutant strain ML03J. Phenotypic characterization of wild-type and mutant strains demonstrated that ML03J had no obvious growth or metabolic defects on 0.2% glucose LB medium, produced a functionally defective flagellum, and could not utilize sorbose; the biological significance of sorbose utilization is unknown. Omics-based analysis revealed the involvement of LuxS in the transcriptional activation of several flagella/chemotaxisrelated genes (flhD; fliA, C, D, S, Z; and cheA, Y, Z), repression of glutamate-dependent acid resistance genes (gadAB), and expression of virulence factors including Shiga toxin, hemolysin, and SepD within the LEE pathogenicity island.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.89-92
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• 2005

The induction melting was employed to prepare Nb-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by induction melting and subsequent annealing at $400^{\circ}C$ for 2 hrs in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased with increasing temperature, indicating mixed conduction behavior. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with increasing the amount of Nb doping, mainly originated from the high Seebeck coefficient around mixed conduction temperature and high electrical conductivity.