• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.458-463
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• 2008

High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.

• The Plant Pathology Journal
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• v.34 no.6
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• pp.470-479
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• 2018

The rice blast pathogen Magnaporthe oryzae is a global threat to rice production. Here we characterized RHO2 gene (MGG_02457) that belongs to the Rho GTPase family, using a deletion mutant. This mutant ${\Delta}Morho2$ exhibited no defects in conidiation and germination but developed only 6% of appressoria in response to a hydrophobic surface when compared to the wild-type progenitor. This result indicates that MoRHO2 plays a role in appressorium development. Furthermore, exogenous cAMP treatment on the mutant led to appressoria that exhibited abnormal morphology on both hydrophobic and hydrophilic surfaces. These outcomes suggested the involvement of MoRHO2 in cAMP-mediated appressorium development. ${\Delta}Morho2$ mutation also delayed the development of appressorium-like structures (ALS) at hyphal tips on hydrophobic surface, which were also abnormally shaped. These results suggested that MoRHO2 is involved in morphological development of appressoria and ALS from conidia and hyphae, respectively. As expected, ${\Delta}Morho2$ mutant was defective in plant penetration, but was still able to cause lesions, albeit at a reduced rate on wounded plants. These results implied that MoRHO2 plays a role in M. oryzae virulence as well.

• Advances in nano research
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• v.7 no.3
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• pp.209-221
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• 2019

Graphene, with impressive electronic properties, have high potential in the microelectronic field. However, graphene itself is a zero bandgap material which is not suitable for digital logic gates and its application. Thus, much focus is on graphene nanoribbons (GNRs) that are narrow strips of graphene. During GNRs fabrication process, the occurrence of defects that ultimately change electronic properties of graphene is difficult to avoid. The modelling of GNRs with defects is crucial to study the non-idealities effects. In this work, nearest-neighbor tight-binding (TB) model for GNRs is presented with three main simplifying assumptions. They are utilization of basis function, Hamiltonian operator discretization and plane wave approximation. Two major edges of GNRs, armchair-edged GNRs (AGNRs) and zigzag-edged GNRs (ZGNRs) are explored. With single vacancy (SV) defects, the components within the Hamiltonian operator are transformed due to the disappearance of tight-binding energies around the missing carbon atoms in GNRs. The size of the lattices namely width and length are varied and studied. Non-equilibrium Green's function (NEGF) formalism is employed to obtain the electronics structure namely band structure and density of states (DOS) and all simulation is implemented in MATLAB. The band structure and DOS plot are then compared between pristine and defected GNRs under varying length and width of GNRs. It is revealed that there are clear distinctions between band structure, numerical DOS and Green's function DOS of pristine and defective GNRs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korean Institute of Landscape Architecture
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• v.47 no.1
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• pp.88-103
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• 2019

This paper aims to identify planting design for the renewal of Okgu Park, located in Siheung, Gyeonggi-do. I designate planting concept fit spatial functions and also suggest planting designs that are proper for a growth environment. The spatial functions of the research site are divided on the basis of the park facilities, its surroundings, and usage. To understand the planting concept, this paper looks into the distribution of plant species and the precise planting structure. To understand the planting concept and the current usage of shade space in the park, I examine the distribution of plant species and the precise planting structure. There are 48 kinds of plants, with Zoysia japonica area (28.84%), Prunus yedoensis (8.0%), Pinus thunbergii (6.73%) and Zelkova serrata (6.38%) taking up the majority. 27 places were chosen for researching the precise planting structure. The research shows that the average green coverage ratio is 38.14% and the average green capacity coefficient is $0.72m^3/m^2$. The growth defective rate of trees in the shade areas is estimated by averaging the classified growth conditions of individual trees per block of shade areas. Areas with an inferior environment for growth and low spatial usage in Okgu Park are selected as subjects for planting design. After comparing the spatial functions with planting concepts and analyzing the growth of plants, I identify $36,236m^2$ areas with inferior growth condition. I also examine structures and the surrounding areas to find areas that require urgent planting improvement, specifically identifying landscape space and shade space around the fountain and the buffer space nearby the North gate. I rearrange spatial functions in the selected areas to devise a planting design considering the existing vegetation, layer structure, and its usage. I set the planting concept and direction to improve the landscape of the selected areas through implementing a planting design so the park users can be satisfied with each space.

• Journal of Korean Tunnelling and Underground Space Association
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• v.24 no.5
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• pp.411-429
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• 2022

Instrumentations are essential in NATM tunnels, however measuring instruments are installed and applied without performance verification procedures due to insufficient research on methods, procedures, regulations, etc. to verify the reliability of the measuring instruments. In this study, domestic and foreign regulations relating to the verification and calibration of instruments were investigated and necessities for accreditation standards were proposed. In order to identify the causes of the defects, an external inspection was performed on rock bolt stressmeter and rod extensometer, which are measuring instruments with relatively complex structures. For verifying the performance of these instruments, verification devices were developed that can load step-by-step and the causes of defects were identified in measuring instruments of nine domestic manufacturers. Through the performance test, a number of measuring instruments were found to be defective. It was important to test the performance of the instruments in the state of a finished product and accordingly performance inspection methods and procedures were proposed. The results of this study are expected to help preparing related regulations for verifying instrument performance and selecting instruments in the field.