• 제목/요약/키워드: defect structure

검색결과 756건 처리시간 0.026초

Automatic Defect Detection from SEM Images of Wafers using Component Tree

  • Kim, Sunghyon;Oh, Il-seok
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제17권1호
    • /
    • pp.86-93
    • /
    • 2017
  • In this paper, we propose a novel defect detection method using component tree representations of scanning electron microscopy (SEM) images. The component tree contains rich information about the topological structure of images such as the stiffness of intensity changes, area, and volume of the lobes. This information can be used effectively in detecting suspicious defect areas. A quasi-linear algorithm is available for constructing the component tree and computing these attributes. In this paper, we modify the original component tree algorithm to be suitable for our defect detection application. First, we exclude pixels that are near the ground level during the initial stage of component tree construction. Next, we detect significant lobes based on multiple attributes and edge information. Our experiments performed with actual SEM wafer images show promising results. For a $1000{\times}1000$ image, the proposed algorithm performed the whole process in 1.36 seconds.

Effects of Structure and Defect on Fatigue Limit in High Strength Ductile Irons

  • Kim, Jin-Hak;Kim, Min-Gun
    • Journal of Mechanical Science and Technology
    • /
    • 제14권5호
    • /
    • pp.530-536
    • /
    • 2000
  • In this paper, the influence of several factors such as hardness, internal defect and non-propagating crack on fatigue limits was investigated with three kinds of ductile iron specimens. From the experimental results the fatigue limits were examined in relation with hardness and tensile strength in case of high strength specimens under austempering treatment; in consequence the marked improvement of fatigue limits were not showed. The maximum defect size was an important factor to predict and to evaluate the fatigue limits of ductile irons. And, the quantitative relationship between the fatigue limits$({\sigma}_w)$ and the maximum defect sizes $(\sqrt{area}_{max})$ was expressed as ${\sigma}_w^n{\cdot}{\sqrt{area}}_{max}=C_2$. Also, it was possible to explain the difference for the fatigue limits in three ductile irons by introduction of the non-propagating crack rates.

  • PDF

결함제어를 통한 열전 반도체 연구 동향 (Defect Engineering for High-Performance Thermoelectric Semiconductors)

  • 민유호
    • 한국전기전자재료학회논문지
    • /
    • 제35권5호
    • /
    • pp.419-430
    • /
    • 2022
  • Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

변형된 공장-장간막 복합 유리피판을 이용한 인두식도 재건 (Pharyngoesophageal Reconstruction Using Modified Jejunomesenteric Composite Free Flap)

  • 임진수;유결
    • 대한두개안면성형외과학회지
    • /
    • 제9권2호
    • /
    • pp.110-113
    • /
    • 2008
  • Purpose: The jejunal free flap is the most standard and reliable procedure of reconstruction of the circumferential pharyngoesophageal defect because it provides pliable, elastic, secreting mucosa and posses reliable vascular anatomy. In this report, the authors introduce the modification of jejunal free flap for decreasing the complications in fatty complicated patients. Method: After harvesting the jejunum with mesentery and mesenteric vessels, both ends of jejunum were excised remaining the mesenteric portion. The jejunal portion of this composite flap was placed to reconstruct esophagopharyngeal defect area and the mesenteric portion was used to obliterate the dead space at paratracheal region and to cover the vital structure and the vascular anastomotic region. Result: A 72 year-old man with recurrent hypopharyngeal cancer who had about 15 cm sized circumferential pharyngoesophageal defect after total pharyngectomy was reconstructed with jejunomesenteric composite free flap without any complications. Conclusion: The mesenteric flaps at both side of jejunomesenteric composite free flap provide the advantages that could obliterate dead space, that could provide cover for the vital cervical vascular structure in case of vascularity was compromised due to previous radiation therapy, and that could preserve as much vascularity at both ends of jejunal flap as possible.

Defect Chemistry of the Mixed Conducting Cage Compound Ca12Al14O33

  • Janek, J.;Lee, D.K.
    • 한국세라믹학회지
    • /
    • 제47권2호
    • /
    • pp.99-105
    • /
    • 2010
  • The electrical transport properties of mayenite ($Ca_{12}Al_{14}O_{33}$ or $12CaO{\cdot}7Al_2O_3$; mostly abbreviated as $C_{12}A_7$) can be controlled in a wide range by varying the oxygen deficiency: At high temperatures mayenite becomes either an oxygen solid electrolyte, a mixed ionic/electronic conductor or an inorganic electride with metal-like properties upon chemical reduction (removing oxygen). The underlying defect chemistry can be understood on the basis of a relatively simple model-despite the complex cage structure: A point defect model based on the assumption that the framework $[Ca_{12}Al_{14}O_{32}]^{2+}$ acts as a pseudo-donor describes well the high temperature transport properties. It accounts for the observed conductivity plateau at higher oxygen activities and also describes the experimentally observed oxygen activity dependence of the electronic conductivity with -1/4 slope at temperatures between 800 and $1000^{\circ}C$. Doping effects in mayenite are still not well explored, and we review briefly the existing data on doping by different elements. Hydration of mayenite plays a crucial role, as Mayenite is hygroscopic, which may be a major obstacle for technical applications.

주조 구조물 수축공의 형상단순화 기법을 통한 정적하중에 대한 영향도 분석 (Contribution Analysis Using Shape Simplification Method for Casting Structure Shrinkage)

  • 곽시영;임채호;백재욱
    • 대한기계학회논문집A
    • /
    • 제33권8호
    • /
    • pp.807-812
    • /
    • 2009
  • Most structure engineers give the casting components over-estimated factor of safety without any reasonable foundation due to the worries about the unavoidable defects such as shrinkages and porosity in castings; the engineers have little knowledge on the relation between the defect and structural behavior. And the workers in casting field also do not know how to control the defects by manufacturing; they do not know to where the defects move or until how size they reduce the defects. In this study, shrinkage defect was scanned by industrial computerized tomography instrument (CT), and subsequently was modeled to a spheroid primitive for structural analysis. Using these simplified models of shrinkage, we observed the effects of the defect on the results of the structural analysis. A commercial structural analysis code was used to do the analysis works. Considering the conclusions, it is possible to manage the shrinkages effectively in casting process and to design the products with more reliable

DGS 구조의 4-port 등가회로 및 파라미터에 대한 추출 방법에 대한 연구 (A study for the extraction of DGS 4-port equivalent circuit and it's parameters)

  • 손창신;정명섭;최승완;박준석;임재봉;조홍구
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2004년도 하계학술대회 논문집 C
    • /
    • pp.2043-2045
    • /
    • 2004
  • This thesis complemented the weak points that the existing theses did not represented a phase characteristic as the equivalent circuit by applying 4-port simulation to DGS (Defected Ground Structure) characteristic and an equivalent circuit, which are the transmission line structure that has the defect made in the ground surface. We used a distribute device and a lumped device, obtained the equivalent circuit by applying the structure of balun to a discontinuous part. An indicated DGS (Defected Ground structure) is a dumbbells-shaped single defect, we indicated satisfying a magnitude and phase characteristics by applying this equivalent circuit.

  • PDF

능동 소자의 실장을 위한 새로운 DGS구조와 4-port등가 모델링 방법 연구 (A study of modeling novel DGS 4-port equivalent circuit for mounting active device)

  • 손창신;박준석;김형석;임재봉
    • 한국정보통신설비학회:학술대회논문집
    • /
    • 한국정보통신설비학회 2004년도 하계학술대회
    • /
    • pp.386-389
    • /
    • 2004
  • This thesis complemented the weak points that the existing theses did not represented a phase characteristic as the equivalent circuit by applying 4-port simulation to DGS (Defected Ground Structure) characteristic and an equivalent circuit, which are the transmission line structure that has the defect made in the ground surface. We used a distribute device and a lumped device, obtained the equivalent circuit by applying the structure of balun to a discontinuous part. An indicated DGS (Defected Ground structure) is a dumbbells-shaped single defect, we indicated satisfying a magnitude and phase characteristics by applying this equivalent circuit.

  • PDF

Electronic Structure of Oxygen in the Defective Nickel Monoxide

  • 이광순;구현주;함경희;안운선
    • Bulletin of the Korean Chemical Society
    • /
    • 제16권2호
    • /
    • pp.164-168
    • /
    • 1995
  • The band structure of nickel monoxide having a cation defect rock salt structure is calculated by means of the tight-binding extended Huckel method. The calculation is also made for the net charge, the DOS, the COOP, the electron density of the constituent atoms, and the O 1s binding energy shift when one of the adjacent nickel atoms is defected. It is found that the band gap near the Γ direction on the Brillouin zone is about 0.2 eV, and that all of the properties calculated including the electronic structure of the oxygen atom are more effectively affected by the surface defect than the inside one. The core O 1s binding energy shift is calculated by the use of valence potential method and the results are very satisfactory in comparison with the XPS experimental findings.

DEFECT INSPECTION IN SEMICONDUCTOR IMAGES USING HISTOGRAM FITTING AND NEURAL NETWORKS

  • JINKYU, YU;SONGHEE, HAN;CHANG-OCK, LEE
    • Journal of the Korean Society for Industrial and Applied Mathematics
    • /
    • 제26권4호
    • /
    • pp.263-279
    • /
    • 2022
  • This paper presents an automatic inspection of defects in semiconductor images. We devise a statistical method to find defects on homogeneous background from the observation that it has a log-normal distribution. If computer aided design (CAD) data is available, we use it to construct a signed distance function (SDF) and change the pixel values so that the average of pixel values along the level curve of the SDF is zero, so that the image has a homogeneous background. In the absence of CAD data, we devise a hybrid method consisting of a model-based algorithm and two neural networks. The model-based algorithm uses the first right singular vector to determine whether the image has a linear or complex structure. For an image with a linear structure, we remove the structure using the rank 1 approximation so that it has a homogeneous background. An image with a complex structure is inspected by two neural networks. We provide results of numerical experiments for the proposed methods.