• 한국재료학회지
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• 제20권5호
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• pp.262-266
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• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.

• 전기전자학회논문지
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• 제13권1호
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• pp.57-64
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• 2009

The optoelectrical characteristics of the ZnO nanoparticles (NPs) annealed in vacuum or oxygen condition from $200^{\circ}C$ to $600^{\circ}C$ were examined. Increased on-off ratio (or, the ratio of photocurrent to dark current) was observed when they were annealed at $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ with the values enhanced about 4 orders compared to the as-prepared ZnO NPs in both annealing conditions, while the maximum efficiency was shown at the annealing temperature of $600^{\circ}C$ for the ZnO NPs annealed in vacuum with the value of 29.8 mA/W and at the temperature of $500^{\circ}C$ for those annealed in oxygen condition with the value of 40.3 mA/W. Photoresponse behavior of the ZnO NPs annealed in oxygen showed the sharp increase right after the ir exposure to the light followed by the slow decay and saturation during steady illumination, differing from the ZnO NPs annealed in vacuum which only exhibited the gradual increase. This difference occurred due to the curing effect of the oxygen vacancies. SEM images indicated no change in their morphologies with annealing, indicating the change in their internal structures by annealing, and most remarkably at $600^{\circ}C$. As for their photoluminescence(PL) spectra, the decrease of the deep-level(DL) emission was observed when they were annealed in oxygen at $400^{\circ}C$, and not at $200^{\circ}C$ and $600^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• 한국입자에어로졸학회지
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• 제6권2호
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• pp.51-59
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• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• 한국해양환경ㆍ에너지학회지
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• 제13권2호
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• pp.121-125
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• 2010

지중 저장기술은 대기로 방출되는 이산화탄소를 저감하는 기술로서 기후변화를 발생하는 온실효과를 저감 시킬 수 있다. 해양 저지대에 위치한 심층 대수층 혹은 폐유전 등은 이러한 이산화탄소 저장기술의 중요한 후보군이라고 할 수 있다. 관련된 이산화탄소 주입 및 저장기술은 전 세계적으로도 많은 관심을 받고 있으나, 이러한 시스템에서 이산화탄소 누출이 발생하였을 때의 부정적 영향에 대해서는 아직 심도 있는 연구는 진행되지 못하고 있다. 이산화탄소 저장기술의 안정성이 매우 높아서 누출의 가능성은 매우 낮다고 하더라도, 고농도의 이산화탄소가 만약의 사태에서 누출이 된다면 여전히 해양생태계 및 환경에 위험이 있을 수 있다. 그러나 이에 대한 연구가 충분히 이루어지지 않았기에, 본 연구에서는 하나의 신뢰성 및 위해성 평가방법을 소개하고자 한다. Feature, Event and Process(FEP)를 통해 다양한 요소를 고려하고, 결함수 분석을 통해 신뢰도를 평가하는 방법을 제안한다. 이러한 FEP 분석으로 시스템에서 시공 및 운영과정에서 발생할 수 있는 다양한 누출 가능성을 평가하는 방법을 소개하였다.

• 한국석유지질학회지
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• 제7권1_2
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• pp.13-18
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• 1999

메탄 하이드레이트는 메탄가스를 포함하고 있는 얼음 같은 고체 상태 물질이며 물분자들이 가스 분자들을 둘러싸고 있는 clathrate 혼합물이다. 낮은 온도와 높은 압력의 환경에서 탄화수소 가스는 하이드레이트를 형성하며 이러한 형성 조건으로 인하여 극지방의 육성 퇴적층과 약 300 m 이상 수심이 깊은 해저 퇴적층 내에서 발견된다. 메탄 하이드레이트의 매장량은 정확히 예측하기는 어려우나 그 양은 엄청날 것으로 예상되며, 이와 같은 이유로 향후 천연가스 공급원으로서 주된 역할을 할 것으로 기대하고 있다. 그러나 그 생산 기술은 아직도 취약하며, 또한 메탄 하이드레이트의 해리에 의하여 발생하는 대기 온난화 문제도 심각한 환경 문제로서 대두되고 있다. 이와 같은 관점에서 본 논문에서는 메탄 하이드레이트 생산 기술 현황과 환경에 미치는 영향 등을 분석하여 메탄 하이드레이트의 실체와 연구 방향을 밝히고자 한다

• 천문학회보
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• 제37권2호
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• pp.74.1-74.1
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• 2012

We observed the radio sources found from the First Look Survey (FLS) field at the 1.4 GHz radio continuum emission with the Very Large Array (VLA) using the A configuration. We identify point sources and multi component sources at ${\geq}4{\sigma}$ level. We also present the submillimeter properties of the selected radio sources in the FLS field from the Herschel/SPIRE 250/350/500/${\mu}m$ and AzTEC 1.1mm surveys. The counterparts of the radio sources at submillimeter for these called 'submillimeter galaxies (SMGs)' are detected at infrared wavelength with the Spitzer MIPS 24 & 70 ${\mu}m$ sources. Based on the MMT/HECTOSPEC red-shift survey, IRS spectroscopy, and SDSS photometric red-shift survey, the radio sources are likely to be the extragalactic sources. Here, we use the star formation rate (SFR) derived from the MIPS 24 and 70 ${\mu}m$ luminosity to compare the measured SFR from the VLA 1.4 GHz luminosity. These results show that a tight correlation between the SFR from the radio luminosity and the MIPS $24{\mu}m$ rather than that from the MIPS $70{\mu}m$ luminosity. Radio and IR correlation is also used to indicate the radio and IR properties of star-formation in the galaxies and active galactic nuclei (AGNs). Using the counterpart sources selected at IR and radio wavelengths, we employ the IR/radio flux ratios to determine the properties and population of the selected galaxies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• 한국재료학회지
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• 제22권4호
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• 한국진공학회지
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• 제10권3호
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• pp.335-340
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• 2001

RF마그네트론 스퍼터링법으로 사파이어 기판 위에 Ga을 1 wt% 첨가한 ZnO 박막(GZO)을 기판온도 $550^{\circ}C$에서 성장시켜 다결정 박막을 제조하였다. 이러한 박막은 불충분한 전기적 특성이나 PL(Photoluminescence) 특성을 보이고 있다. 이러한 전하농도, 이동도 그리고 PL특성 등과 같은 전기적 광학적 특성을 향상시키고자 질소분위기하에서 RTA(Rapid Thermal Annealing) 법으로 $800^{\circ}C$와 $900^{\circ}C$에서 각각 3분씩 후열처리 하였다. RTA법으로 후열처리한 GZO박막의 비저항은 $2.6\times10^{-4}\Omega$/cm 였으며 전자농도와 이동도는 각각 $3.9\times10^{20}/\textrm{cm}^3$과 60 $\textrm{cm}^2$/V.s 였다. 이러한 물리적 성질들의 향상은 열처리시 원자 크기가 비슷한 도핑된 Ga 원자들이 일부 휘발되는 Zn 빈자리로 치환하면서 침입자리 보다는 치환자리로의 전이에 기인한 것으로 생각된다.