• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.4
• /
• pp.1-7
• /
• 2008

We studied a growth behavior of Intermetallic compounds(IMCs) during solder bumping with two reflow methods. Ti(50 nm), Cu($1{\mu}m$), Au(50 nm) and Ti(50 nm) thin films were deposited on $SiO_2$/Si wafer using the DC magnetron sputtering system as the under bump metallization(UBM). And the $5{\mu}m$ thick Cu bumps and $20{\mu}m$ thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.

• Journal of Hydrogen and New Energy
• /
• v.28 no.6
• /
• pp.610-617
• /
• 2017

This paper presents a study of the effect of thickness of porous Al-Ni electrodes, on the Hydrogen Evolution Reaction (HER) in alkaline media. As varying deposition time at 300 W DC sputtering power, the thickness of the Al-Ni electrodes was controlled from 1 to $20{\mu}m$. The heat treatment was carried out in $610^{\circ}C$, followed by selective leaching of the Al-rich phase. XRD studies confirmed the presence of $Al_3Ni_2$ intermetallic compounds after the heat treatment, indicating the diffusion of Ni from the Ni-rich phase to Al-rich phase. The porous structure of the Al-Ni electrodes after the selective leaching of Al was also confirmed in SEM-EDS analysis. The double layer capacitance ($C_{dl}$) and roughness factor ($R_f$) of the electrodes were increased for the thicker Al-Ni electrodes. As opposed to the general results in above, there were no further improvements of the HER activity in the case of the electrode thickness above $10{\mu}m$. This result may indicate that the $R_f$ is not the primary factor for the HER activity in alkaline media.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.55-56
• /
• 2009

Small RFID tag antenna were fabricated on Si substrate and their physical and electrical properties were evaluated. With decreasing the size of tag antenna on Si substrate, small SMD-type RFID tags could be fabricated, which is very useful for PCB tracking. Firstly, tag antenna pattern and the electromagnetic properties were simulated with HFSS. The frequency was 13.56MHz, the line-width and line-gap were modeled in the range of $50{\sim}200{\mu}m$. S parameters, SRF, and Q value were calculated from geometry. When the line-width and line-gap were 100um and the loop-turn was 10, the SRF was 80MHZ and the Q value was ca. 9. When the microstrip antenna pattern of aluminum was fabricated by using DC sputtering, Vpp of ca. 1.6V was obtained when the reader-tag distance was 40mm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.1
• /
• pp.44-47
• /
• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.478.1-478.1
• /
• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.188.1-188.1
• /
• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.54.2-54.2
• /
• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

• Korean Journal of Materials Research
• /
• v.23 no.4
• /
• pp.215-218
• /
• 2013

Vanadium dioxide ($VO_2$) is an attractive material for smart window applications where the transmittance of light can be automatically modulated from a transparent state to an opaque state at the critical temperature of ${\sim}68^{\circ}C$. Meanwhile, F : $SnO_2$ (F-doped $SnO_2$, FTO) glass is a transparent conductive oxide material that is widely used in solar-energy-related applications because of its excellent optical and electrical properties. Relatively high transmittance and low emissivity have been obtained for FTO-coated glasses. Tunable transmittance corresponding to ambient temperature and low emissivity can be expected from $VO_2$ films deposited onto FTO glasses. In this study, FTO glasses were applied for the deposition of $VO_2$ thin films by pulsed DC magnetron sputtering. $VO_2$ thin films were also deposited on a Pyrex substrate for comparison. To decrease the phase transition temperature of $VO_2$, tungsten-doped $VO_2$ films were also deposited onto FTO glasses. The visible transmittance of $VO_2$/FTO was higher than that of $VO_2$/pyrex due to the increased crystallinity of the $VO_2$ thin film deposited on FTO and decreased interface reflection. Although the solar transmittance modulation of $VO_2$/FTO was lower than that of $VO_2$/pyrex, room temperature solar transmittance of $VO_2$/FTO was lower than that of $VO_2$/pyrex, which is advantageous for reflecting solar heat energy in summer.

• Korean Journal of Materials Research
• /
• v.9 no.5
• /
• pp.509-514
• /
• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.108-111
• /
• 2002

CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation