• Journal of the Institute of Electronics Engineers of Korea SP
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• v.40 no.1
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• pp.34-42
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• 2003

In this paper, the image restoration process is interpreted as a backward diffusion process and the restored image is given as the solution of the backward diffusion equation (BDF). The ill-posedness of the backward diffusion if subdued by manipulating the exponentially increasing coefficients of the eigenfunctions. In manipulating the coefficients the spectral characteristics of an image is taken into account. The proposed scheme uses an exponentially decreasing function of the coefficients of the eigenfunctions beyond a certain threshold which is optimal with respect to the observation accuracy. The use of decreasing functions also improves the result compared with the constant bounded algorithm since it can include more low frequency components.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.77-82
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• 2006

Analog channel selection filter is described which is designed for a direct-conversion receiver of a IEEE 802.11a wireless LAN. The channel selection filter is an active-RC fifth-order Chebyshev filter with 10MHz cut-off frequency. Two-stage operational amplifier of the filter employs a current re-using feedforward frequency compensation scheme to minimize the power consumption. The filter has been implemented in a 0.18mm CMOS technology and the experimental results show 20mW power consumption with 1.8V supply voltage and 19dB out-of-band iIP3.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• Smart Structures and Systems
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• v.14 no.4
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• pp.679-697
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• 2014

The strain data acquired from structural health monitoring (SHM) systems play an important role in the state monitoring and damage identification of bridges. Due to the environmental complexity of civil structures, a better understanding of the actual strain data will help filling the gap between theoretical/laboratorial results and practical application. In the study, the multi-scale features of strain response are first revealed after abundant investigations on the actual data from two typical long-span bridges. Results show that, strain types at the three typical temporal scales of $10^5$, $10^2$ and $10^0$ sec are caused by temperature change, trains and heavy trucks, and have their respective cut-off frequency in the order of $10^{-2}$, $10^{-1}$ and $10^0$ Hz. Multi-resolution analysis and wavelet shrinkage are applied for separating and extracting these strain types. During the above process, two methods for determining thresholds are introduced. The excellent ability of wavelet transform on simultaneously time-frequency analysis leads to an effective information extraction. After extraction, the strain data will be compressed at an attractive ratio. This research may contribute to a further understanding of actual strain data of long-span bridges; also, the proposed extracting methodology is applicable on actual SHM systems.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.60-66
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• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.25-30
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• 2002

In this paper, high quality silicon nitride film is achieved using Plasma Enhanced Chemical Deposition(PECVD) system, and applied in passivating PHEMT's. Passivated PHEMT's(60 ${\mu}{\textrm}{m}$$\times$2 fingers) showed an increase of 2.7 % and 3 % in the drain saturation current and the maximum transconductance, respectively. The current gain cut-off frequency of 53 ㎓ and maximum oscillation frequency of 105 ㎓ were obtained from the fabricated PHEMT's.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.5
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• pp.43-51
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• 1996

An appropriate lighting standard for the museum is needed to minimize the deterioration of the exhibits by the light. To obtain the basic data for the standard, a system to measure the color change of the artifacts as a function of the radiation energy frequency was constructed. Xenon lamp is used as a light source, and the light is irradiated to the samples through serveral cut-off filters. Measuring the colors of the samples under each filters, color change of the samples is estimated for each frequency ranges of radiation energy. As a result, natural dyes show severe color change in a short time, but traditional papers shows relatively small color change. Using measured results, color change due to other light sources can be calculated and this will be the base of the standard.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.5
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• pp.315-322
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• 1986

In this paper, we have studied on the IIR digital filters design using Elliptic functions. In process of transformation to digital fouctions from analos Elliptic functions, Bilinear z transformation method has been silized. Designing of digital filter using the Bilinear z transformation the problems of aliasing can be avoidedm whereas the frequency distrotion is generated. The transformation form analog function to digital function is not equal in the region of the cut off frequency response caused by this effect. Avoiding the problem of this effect, we have used proewarping method. Finally, the magnitude characteristics of digital filters are compared with its of analog filters by computer simulation. The results have shown that the magnitude characteristics of digital filters by the prewarping method have made more remarkable improvement than its of analog filters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.237-246
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• 1999

A miniaturized waveguide bandpass filter is designed by combining a corrugated lowpass structure and a highpass configuration based on the cut-off effect of waveguides. It is smaller than the conventional waveguide bandpass filter composed of half-wavelength resonators and has wider spurious free characteristics. Optimized design data for a seven-order waveguide bandpass filter with the symmetrical structure are given at the center frequency of 10 GHz with 800 MHz bandwidth. Measured bandwidth of the center frequency of 9.97 GHz is 840 MHz and measured insertion loss is 0.97dB, The length of the bandpass filter is 64.38mm. The first spurious response is produced at 26.1 GHz.

• Journal of the Korean Society for Railway
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• v.13 no.6
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• pp.559-564
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• 2010

This paper proposes an advanced filter design to improve power quality of a head electric power (HEP) as a power conversion unit in centralized-power type electric railway vehicle. First of all, we have measured waveform of output power of transformer connected HEP to design the filter. Throughout experiment and simulation results, it is estimated that switching technique used HEP is advanced selected harmonic elimination PWM (SHEPWM) and the applied switching frequency is about 300Hz. In this paper, a filter to improve power quality considering estimated parameters is designed. As a result, the reduction of the magnitude of the overall harmonic is achieved and confirmed through simulations.