• Korean Journal of Materials Research
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• v.24 no.7
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.761-766
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• 2008

This paper describes a compensation algorithm for a measurement voltage transformer (VT) based on the hysteresis characteristics of the core. The error of the VT is caused by the voltages across the primary and secondary windings. The latter depends on the secondary current whilst the former depends on the primary current, i.e. the sum of the exciting current and the secondary current. The proposed algorithm calculates the voltages across the primary and secondary windings and add them to the measured secondary voltage for compensation. To do this, the primary and secondary currents should be estimated. The secondary current is obtained directly from the secondary voltage and used to calculate the voltage across the secondary winding. For the primary current, in this paper, the exciting current is decomposed into the two currents, i.e. the core-loss current and the magnetizing current. The core-loss current is obtained by dividing the primary induced voltage by the core-loss resistance. The magnetizing current is obtained by inserting the flux into the flux-magnetizing current curve. The calculated voltages across the primary and secondary windings are added to the measured secondary current for compensation. The proposed compensation algorithm improves the error of the VT significantly.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.363-369
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• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• ETRI Journal
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• v.39 no.6
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• pp.859-865
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• 2017

This paper presents a method for determining the optimum active-area width (OAW) of solar cells in a module architecture. The current density-voltage curve of a reference cell with a narrow active-area width is used to reproduce the current density profile in the test cell whose active area width is to be optimized. We obtained self-consistent current density and electric potential profiles from iterative calculations of both properties, considering the distributed resistance of the contact layers. Further, we determined the OAW that yields the maximum efficiency by calculating efficiency as a function of the active-area width. The proposed method can be applied to the design of the active area of a dye-sensitized solar cell in Z-type series connection modules for indoor and building-integrated photovoltaic systems. Our calculations predicted that OAW increases as the sheet resistances of the contact layers and the intensity of light decrease.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.11
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• pp.1388-1393
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• 1999

A more reliable algorithm for detecting a high impedance fault (HIF) requires fault currents at the relaying point containing information of load condition as well as HIF characteristics. This paper presents a modeling method of an HIF in a distribution system using EMTP. From the voltage and current waveforms of HIF experiment, the voltage-current characteristic is obtained and then piecewise linearized. The proposed method gets several points on the linearized voltage-current curve and then represents nonlinearity as piecewise linear resistances using Transient Analysis of Control Systems (TACS) in EMTP. Thus, an HIF is represented as a voltage source in the first and third quadrants of voltage-current plane. The method is implemented in EMTP and thus the voltage and current at the relaying point can be obtained when an HIF occurs. In this paper, an HIF was simulated on various load conditions and fault conditions in 22.9 [kV] distribution systems.

• Progress in Superconductivity
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• v.10 no.2
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• pp.144-148
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• 2009

A current limiter was manufactured using a Josephson junction array to cut off an excessive current flowing into the SQUID sensor. The Fabricateed Josephson junction array was connected in series with a flux transformer that consists of a pick-up coil and an input coil, and the flux transformer was inductively coupled with a Double Relaxation Oscillation SQUID(DROS). The flux-voltage modulation curve was induced by applying an AC magnetic field whose magnitude was far smaller than that of the DC magnetic field. A change in the flux-voltage modulation curve of the SQUID was observed while the DC magnetic field was increased, to qualitatively examine the current limiting characteristic of the Josephson junction array. As a result, it was found that the SQUID flux-voltage modulation curve disappeared at the critical current of the Josephson junction array, which indicates that the Josephson junction array properly works as a current limiter.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2281-2285
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• 2011

An algorithm for extracting SPICE MOS level 2 model parameters for the high voltage MOSFET DC model is proposed. The optimization method for analyzing the nonlinear data of the current-voltage curve using the Gauss-Newton algorithm is proposed and the pre-process step for calculating the threshold voltage and the mobility is proposed. The drain current obtained from the proposed method shows the maximum relative error of 5.6% compared with the drain current of 2-dimensional device simulation for the high voltage MOSFET.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.1-4
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• 2005

The chemical composition and uniaxial compressive stress are varied to observe their effect on the current-voltage characteristics of ZnO based ceramics. The variation of chemical composition produces two kinds of ceramics showing ohmic and nonohmic current-voltage characteristics. The current at a fixed voltage increased with the increase of the compressive stress for both ohmic and nonohmic ceramics. Ceramics showing nonohmic behavior exhibit better reversible return of current-voltage curve when the applied compressive stress is removed from the ceramics than those showing ohmic behavior do. We found an appropriate chemical composition showing linear relation between current and stress at a fixed voltage. The ceramic materials with an appropriate chemical composition can be used as a potential sensing material in pressure sensors.

• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.319-323
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• 2006

The problem of the partial discharge (PD) extinction is investigated. The transient process takes place in a small spherical inclusion which is located in the dielectric. Both the losses caused by polarization and ohmic losses as the dielectric parameters are taken into account. From the inclusion standpoint the dielectric is considered as an active two-pole element (equivalent generator) and inclusion represents by own current-voltage curve. PD extinction voltage was shown to depend on the polarization loss tangent.