• Journal of Power Electronics
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• 제10권6호
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• pp.643-646
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• 2010

An interactive web-based teaching tool for a power semiconductor course at the University of Central Florida is presented in this paper. A novel approach is introduced using Technology Aided Design Tools (TCAD) to generate time-lapsed 2D semiconductor device cross-section embedded in a webpage using $Adobe^{(R)}$ Flash (web design tool) platform to create interactive movies that demonstrate complex device physical phenomenon. Students can step through the interactive movies forward, backward, pausing, or looping. Each step represents a giving bias condition. Current-voltage plots are represented along with the semiconductor device and a visual point is placed on the IV curve to indicate the current bias conditions. The changes are then reflected in the 2D cross-section movie area and the IV plot. This tool was implemented in a classroom setting to augment the lectures or for discovery learning.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• The Korean Journal of Physiology and Pharmacology
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• 제27권1호
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• pp.95-103
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• 2023

Rosiglitazone is a thiazolidinedione-class antidiabetic drug that reduces blood glucose and glycated hemoglobin levels. We here investigated the interaction of rosiglitazone with Kv3.1 expressed in Chinese hamster ovary cells using the wholecell patch-clamp technique. Rosiglitazone rapidly and reversibly inhibited Kv3.1 currents in a concentration-dependent manner (IC₅₀ = 29.8 µM) and accelerated the decay of Kv3.1 currents without modifying the activation kinetics. The rosiglitazonemediated inhibition of Kv3.1 channels increased steeply in a sigmoidal pattern over the voltage range of -20 to +30 mV, whereas it was voltage-independent in the voltage range above +30 mV, where the channels were fully activated. The deactivation of Kv3.1 current, measured along with tail currents, was also slowed by the drug. In addition, the steady-state inactivation curve of Kv3.1 by rosiglitazone shifts to a negative potential without significant change in the slope value. All the results with the use dependence of the rosiglitazone-mediated blockade suggest that rosiglitazone acts on Kv3.1 channels as an open channel blocker.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.235-240
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• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제55권12호
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• pp.633-639
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• 2006

High temperature superconductor (HTS) winding coil is one of the key component in superconducting device fabrication. Double-pancake style coils are widely used for such application. High resistance between pancake coils greatly affects the machine design, operating condition and thus the stability. In order to reduce such resistance, experimentalists are looking for efficient and damage free coil connecting methods. In this respect, here we proposed parallel joining method to connect the coils. This is to do crossly joining with HTS tapes on two parallel HTS tapes. Joint samples between two parallel HTS tapes were prepared by using HTS tapes and current-voltage (I-V) characteristic curves were investigated at liquid nitrogen temperature i.e., 77.3 K. A 20 cm length joint connected between two parallel HTS tapes shows $32.5n{\Omega}$, for currents up to 250 A. A small HTS magnet, having two double pancake sub-coils connected together through new parallel joint method was fabricated and their current-voltage (I-V) characteristic curve was investigated. At 77.3K, critical current(Ic) of 97 A and resistance of $55n{\Omega}$ for currents upto 130 A were measured. At operating current 86 A lower than Ic, Joule heats generated in whole magnet and at joint region between sub-coils were 226 mW and 0.4 mW, respectively. Low Joule heat generation suggests that this joining method may be used to fabricate HTS magnet or windings.

• Bulletin of the Korean Chemical Society
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• 제23권1호
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• pp.71-74
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• 2002

The apparent barrier height for charge transfer through an interfacial water layer between a Pt/Ir tip and a gold surface has been measured using STM technique. The average thickness of the interfacial water layer inside an STM junction was controlled by the amount of moisture. A thin water layer on the surface was formed when relative humidity was in the range of 10 to 80%. In such a case, electron tunneling through the thin water layer became the majority of charge transfers. The value of the barrier height for the electron tunneling was determined to be 0.95 eV from the current vs. distance curve, which was independent of the tip-sample distance. On the other hand, the apparent barrier height for charge transfer showed a dependence on tip-sample distance in the bias range of 0.1-0.5 V at a relative humidity of approximately 96%. The non-exponentiality for current decay under these conditions has been explained in terms of electron tunneling and electrochemical processes. In addition, the plateau current was observed at a large tip-sample distance, which was caused by electrochemical processes and was dependent on the applied voltage.

• 한국자기학회지
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• 제26권2호
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• pp.62-66
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• 2016

포탄에 묻혀있는 탐지코일에서 유도되는 전압으로부터 총구를 떠나는 포탄의 초기속도를 계산하기 위하여 링 형태의 자석, 요크 및 탐지코일로 모델을 구성하였다. 자기장 해석에 의해 탐지코일의 유도전압에서 구한 마스터 곡선으로부터 포탄의 초기속도를 구할 수 있다. 탐지코일의 유도전압은 포탄에 묻혀있는 탐지코일 직경의 크기에 영향을 받는데, 직경의 크기가 증가하면 유도전압도 비례하여 증가한다. 탐지코일에서 유도되는 전압의 직경 효과를 감안한 초기속도 변화에 대한 정보를 입력하면 목표에서 포탄이 정확하게 폭발할 수 있다.

• The Korean Journal of Physiology
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• 제26권1호
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• pp.15-25
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• 1992

In order to elucidate the properties of the background current whole cell patch clamp studies were performed in rabbit ventricular cells. Ramp pulses of ${\pm}80\;mV$ from holding potential of 40 mV(or 20 mV) at the speed of 0.8 V/sec were given every 30 sec(or 10 sec) and current-voltage diagrams(I-V curve) were obtained. For the activation of the background current isoprenaline, adenosine 3',5'-cyclic monophosphate(dBcAMP), guanosine 3',5'-cyclic monophosphate(cGMP), and $N^6$-2'-o-dibutyryladenosine 3',5'-cyclic monophosphate(dBcAMP) were applied after all known current systems were blocked with 2mM Ba, 1 mM Cd ,5 mM Ni, 10 ${\mu}M$ diltiazem, 10 ${\mu}m$ ouabain, and 20 mM tetraethylammonium(TEA). The conductance of background current in control was $0.65{\pm}0.69$ nS at 0 mV, its I-V curves was almost linear and reversed near 50 mV. When there was no taurine in pipette solution, isoprenaline hardly activated the background current but when taurine existed in pipette solution, isoprenaline activated the larger background current. Cyclic AMP or cyclic GMP alone had little effect on the activation of the background current, while cGMP potentiated cGMP effect. When the background current was activated with cGMP and cAMP, isoprenaline could not further increased the background current. The background current activated by isoprenaline depended on extracellular $Cl^-$ concentration and its reversal potential was shifted according to chloride equilibrium potential. The change of extracellular $Na+$ concentration had little effect on reversal potential of the background current activated by isoprenaline.

• 한국재료학회지
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• 제29권7호
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• 한국재료학회지
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• 제33권3호
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• pp.106-114
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• 2023

The carbon concentration in the carburized steels was measured by electron probe microanalysis (EPMA) for a range of soluted carbon content in austenite from 0.1 to 1.2 wt%. This study demonstrates the problems in carbon quantitative analysis using the existing calibration curve derived from pure iron (0.008 wt%C) and graphite (99.98 wt%C) as standard specimens. In order to derive an improved calibration curve, carbon homogenization treatment was performed to produce a uniform Kα intensity in selected standard samples (AISI 8620, AISI 4140, AISI 1065, AISI 52100 steel). The trend of detection intensity was identified according to the analysis condition, such as accelerating voltage (10, 15, 30 keV), and beam current (20, 50 nA). The appropriate analysis conditions (15 keV, 20 nA) were derived. When the carbon concentration depth profile of the carburized specimen was measured for a short carburizing time using the improved calibration curve, it proved to be a more reliable and accurate analysis method compared to the conventional analysis method.