• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.486-493
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• 2017

Refineries and chemical plants with isolated power systems that have a limited power supply are more susceptible to voltage changes from disturbances compared to power systems connected with a power company. Furthermore, most loads in such cases are induction motor loads, and therefore, transient voltage characteristics when starting a high-capacity motor must be examined. In general, high-capacity motors are customized appropriately to the load performance curve by the manufacturer during the construction of an industrial plant. Subsequently, when complying with the voltage drop permitted by international standards during the design process, power supply equipment such as transformers and generators is overdesigned. Therefore, a novel analysis is necessary on standards for startup and constraint voltage drops, as well as on identifying the voltage drop limitations for starting high-capacity motors in refineries and chemical plants with isolated power systems. In this study, field tests on an industrial plant were conducted, and simulations modeled under conditions identical to those of the field test system were performed using the general-purpose program ETAP in order to compare the results.

• Journal of Electrical Engineering and Technology
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• v.8 no.2
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• pp.206-214
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• 2013

This paper proposes a new method for monitoring local voltage stability using the saddle node bifurcation set or loadability boundary in two dimensional power parameter space. The method includes three main steps. First step is to determine the critical buses and the second step is building the static voltage stability boundary or the saddle node bifurcation set. Final step is monitoring the voltage stability through the distance from current operating point to the boundary. Critical buses are defined through the right eigenvector by direct method. The boundary of the static voltage stability region is a quadratic curve that can be obtained by the proposed method that is combining a variation of standard direct method and Thevenin equivalent model of electric power system. And finally the distance is computed through the Euclid norm of normal vector of the boundary at the closest saddle node bifurcation point. The advantage of the proposed method is that it gets the advantages of both methods, the accuracy of the direct method and simple of Thevenin Equivalent model. Thus, the proposed method holds some promises in terms of performing the real-time voltage stability monitoring of power system. Test results of New England 39 bus system are presented to show the effectiveness of the proposed method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.386-392
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• 2020

In this study, the drift current characteristics of charged particles are analyzed for panels fabricated by varying the waveform biasing of the active particle loading method (APLM), which is a method driven by the electrophoretic principle of loading charged particles into a cell of a barrier rib-type electronic paper. We prepare 3 panels using APLM and 1 panel without APLM. The waveform of APLM uses square wave and ramp wave, and the step voltage wave is applied to the driving voltage. The drift currents measured from the square wave and ramp wave with the same period applied by APLM are 4.872 µC and 5.464 µC, respectively, and the ramp wave is shown to be relatively advantageous for loading charged particles that have a large q/m. The time-current curve results confirm that the abrupt movement of charged particles is occurring. When the step form wave signal with a short time of 1s is first applied, initial large movement of the charged particles is confirmed to occur in all samples, which is understood as the effect of applying the voltage necessary to remove the imaging force. The results of this study are expected to improve the loading of charged particles into the electronic paper cell, driven by the electrophoretic principle and optimization of the driving conditions.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1418_1419
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• 2009

This paper presents the transient impedance when high current impulse up to 5 kA is applied to a scaled grounding grid in test field. For a realistic analysis of transient impedance on the high current impulse in the ground systems, grounding electrode installed outdoors and impulse current generator was used. The results were discussed based on its voltage and current trace, impulse impedance and V-I curve.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.8
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• pp.65-70
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• 2012

Induction motor is the most widely used to obtain the driving force in the industrial site. Induction motor generates a high current at startup. Most of starting currents are often more than five times of rated current. This high starting current can cause problems such as the voltage drop in the system. In order to solve these problems, if the motor capacity is large, generally we use reactor starting method rather than direct on line starting method. When a high startup current passes through reactor, reactor can serve as a nonlinear elements. In this study, we analyzed that the current, torque and power of the induction motor are different from the change of linear and nonlinear components of the reactor magnetic field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.774-779
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• 1988

The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.219-222
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• 2004

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1471-1481
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• 2014

This paper presents the new power dissipation model of individual switching device in a high-level modular multilevel converter (MMC), which can be mostly used in voltage sourced converter (VSC) based high-voltage direct current (HVDC) system and flexible AC transmission system (FACTS). Also, the voltage balancing method based on sorting algorithm is newly proposed to advance the MMC functionalities by effectively adjusting switching variations of the sub-module (SM). The proposed power dissipation model does not fully calculate the average power dissipation for numerous switching devices in an arm module. Instead, it estimates the power dissipation of every switching element based on the inherent operational principle of SM in MMC. In other words, the power dissipation is computed in every single switching event by using the polynomial curve fitting model with minimum computational efforts and high accuracy, which are required to manage the large number of SMs. After estimating the value of power dissipation, the thermal condition of every switching element is considered in the case of external disturbance. Then, the arm modeling for high-level MMC and its control scheme is implemented with the electromagnetic transient simulation program. Finally, the case study for applying to the MMC based HVDC system is carried out to select the appropriate insulated-gate bipolar transistor (IGBT) module in a steady-state, as well as to estimate the proper thermal condition of every switching element in a transient state.