• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.217-218
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• 2018

Droop control method is the conventional controller to solve the problem of current sharing error and voltage deviation that can occur in parallel connection of DC-DC converter. This paper compared V-I droop control with I-V droop control, which based on communication and confirmed the results through experiments.

• The Korean Journal of Physiology
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• v.20 no.2
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• pp.165-174
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• 1986

The voltage clamp studies were undertaken to elucidate the properties of the slow inward current, $i_{si}$, in the small preparations of the rabbit sinoatrial node. The slow inward current, $i_{si}$, which is known to be responsible for the late one-third of pacemaker potential and whole range of upstroke phase of action potential was analysed with the effects of isoprenaline, cobalt, ouabain and higenamine. The results obtained are as follows; 1) Voltage of SA node preparation was held at zero current level, usually-40mV and the slow inward current, $i_{si}$, was activated by depolarizing clamp pulses. Peak values of $i_{si}$, in steady state were at $-10{\pm}0mV$ in most preparations. 2) Isoprenaline, ${\beta}-agonist$ increased $i_{si}$ and no shift was noticed in voltage-dependency. 3) Cobalt ion in the concentration of 1 mM abolished is, in entire range of membrane potential and the difference of two current levels before and after $Co^{2+}$ treatment could be considered as pure $i_{si}$ magnitude. 4) In the therapeutic concentration of ouabain $(5{\times}10^{-8}M)$ slightly increased is, and reduced the time to reach the peak value. 5) Higenamine $(10^{-6}M)$ changed the configurations of action potential (i. e. rapid upstroke phase and notch in the spike) and increase spontaneous rate. It also increased is, and the effect of higenamine was blocked ${\beta}-blocker$, propranolol $(10^{-6}M)$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.433-433
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• 2010

A microplasma current switch (MPCS) for a device operated in a current mode like organic light-emitting diodes (OLEDs), which features matrix addressability and current switching, is presented as well as its architecture and operational principle. The MPCS utilizes the intrinsic memory and conductivity of plasmas to achieve matrix addressability and current switching. We have fabricated a $100\;mm\;{\times}\;100\;mm$ MPCS panel in which its cell pitch is $1080\;{\mu}m\;{\times}\;1080\;{\mu}m$. The matrix addressability and current switching were verified. In addition, the current-voltage (I-V) characteristic of the unit cell was measured when plasmas were ignited. In principle, the scheme of the MPCS is equivalent to that of a double Langmuir probe diagnosing plasma parameters except for their relative dimensions to a plasma volume. Accordingly, the I-V characteristic was analyzed by a double Langmuir probe theory, and the plasma density and electron temperature were estimated from the I-V curve using a collisional double Langmuir probe theory.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.3
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• pp.79-86
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• 2013

In order to analyze the electrical performance of ZnO surge arresters stressed by the combined DC and AC voltages that are generated in DC/AC converter systems, the leakage current properties of ZnO surge arrester blocks deteriorated by impulse currents were investigated. The test specimens were deteriorated by the 8/$20{\mu}s$ impulse current of 2.5kA and the leakage currents flowing into the deteriorated zinc oxide(ZnO) arrester blocks subjected to the combined DC and power frequency AC voltages are measured. As a result, the leakage currents flowing through deteriorated ZnO surge arrester blocks were higher than those flowing through the fine ZnO surge arrester blocks and the larger the injection number of 8/$20{\mu}s$ impulse current of 2.5kA is, the greater the leakage current is. The leakage current-voltage curves(I-V curves) of the fine and deteriorated ZnO surge arrester blocks stressed by the combined DC and AC voltages show significant difference in the low conduction region. Also the cross-over phenomenon is observed at the voltage close to the knee of conduction on plots of I-V curves.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.195-198
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• 2000

In this paper the insulation characteristics test results of 25 low-voltage induction motors($3\phi$, 5HP, 380V) are presented. Five different types of insulation techniques are applied to 25 motors. The maximum partial discharge (PD) magnitude ($\textrm{Q}_{m}$) discharge inception voltage (DIV) dissipation factor tip-up ($\Delta$tan$\delta$) and rate of change in AC current($\Delta$I) are measured by PD and AC current tests. Also the insulation breakdown tests by high voltage pulse are performed and the corresponding breakdown voltage are obtained.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• The Korean Journal of Physiology and Pharmacology
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• v.10 no.1
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• pp.7-11
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• 2006

Interstitial cells of Cajal (ICCs) are pacemakers in gastrointestinal tracts, regulating rhythmicity by activating nonselective cation channels (NSCCs). In the present study, we investigated the general characteristics and pH-mediated regulation of pacemaker activity in cultured interstitial cells of Cajal. Under voltage clamp mode and at the holding potential of -60 mV, the I-V relationships and difference current showed that there was no reversal potential and voltage-independent inward current. Also, when the holding potentials were changed from +20 mV to -80 mV with intervals of 20 mV, there was little difference in inward current. In pacemaker activity, the resting membrane potential (RMP) was depolarized (In pH 5.5, $23{\pm}1.5$ mV depolarized) and the amplitude was decreased by a decrease of the extracellular pH. However, in case of increase of extracellular pH, the RMP was slightly hyperpolarized and the amplitude was decreased a little. The melastatin type transient receptor potential (TRPM) channel 7 has been suggested to be required for intestinal pacemaking activity. TRPM7 produced large outward currents and small inward currents by voltage ramps, ranging from +100 to -100 mV from a holding potential of -60 mV. The inward current of TRPM7 was dramatically increased by a decrease in the extracellular pH. At pH 4.0, the average inward current amplitude measured at -100 mV was increased by about 7 fold, compared with the current amplitude at pH 7.4. Changes in the outward current (measured at +100 mV) were much smaller than those of the inward current. These results indicate that the resting membrane potential of pacemaking activity might be depolarized by external acidic pH through TRPM7 that is required for intestinal pacemaking activity.

• 전기의세계
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• v.26 no.5
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.163-166
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• 1995

A solar cell I-V (current-voltage) characteristic measurement facility is crucial, for the characteristic of solar cells, The solar cell I-v tester has been designed and fabricated to characterize the solar cell at SAIT.