• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.251-254
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• 1999

In this paper V-I(Voltage to Current) converter using the series composite transistor is presented. Due to the series composite transistor employs operating in the saturation region and triode region, the proposed circuit has wide input range at low voltage. The designed V-I converter has simulated by HSPICE using 0.6${\mu}{\textrm}{m}$ n-well CMOS process with a $\pm$2.5V supply voltage. Simulation results show that the THD can be 0.81% at 4 $V_{p-p}$ differential input voltage when frequency of input signal is 10MHz.z.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.1
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• pp.51-56
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• 2014

PV cell modeling is necessary both for software and hardware simulators in analyzing and testing the performance of PV generation systems. Unique I-V curve of a PV cell identifies its own characteristics by electrical equivalent model that is composed of diode constants ($I_o$, $v_t$), photo-generated current ($I_{ph}$), series resistance ($R_s$), and shunt resistance ($R_{sh}$). Photo-generated current can be easily estimated since it is proportional to irradiation level. However, other electrical parameters should be solved from the manufacturer's data sheet that is consisted with three remarkable operating points such as open circuit voltage ($V_{oc}$), short circuit current ($I_{sc}$), and maximum power voltage/current ($V_{MPP}/I_{MPP}$). This paper explains and analyzes mathematical process of a novel PV cell modeling algorithm that was proposed by the authors with the name of "K-algorithm".

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.232-242
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• 2015

Analytical study of surface recombination at the $Si/SiO_2$ interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers are assumed to form a continuum rather than to be at a single energy level in the energy gap. It is shown that the presence of a hump in the dark I-V characteristics of high efficiency PERL cells is due to the dark current transition from a high surface recombination regime at low voltage to a low surface recombination regime at high voltage. Successful fitting of reported dark I-V characteristics of a typical PERL cell is obtained with several possible combinations of surface parameters including equal electron and hole capture cross sections.

• Proceedings of the KIEE Conference
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• 2005.07a
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• pp.524-526
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• 2005

As a research activity of the project of "Verification Test of Superconducting Power Cable", we measured the AC loss of a short length superconducting power cable. The rating and the length of the cable were 22.9kV, 1,250A and 2.2m. The voltage taps for measuring the AC loss were attached to both ends of the conductor of the superconducting cable. Through the voltage taps and a lock-in amplifier we measured the in-phase component of the voltage($V_x$) with the load current(I). The AC loss was measured by multiplying the in-phase component of the voltage($V_x$) by the load current(I). The value of the AC loss of the superconducting power cable was 1.18W/m/phase/kA at 77.3K, 1atm.

• Journal of Welding and Joining
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• v.15 no.3
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• pp.79-87
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• 1997

This study was performed to evaluate basic characteristics of electron beam welding process for a 9% Ni steel plate. The principal welding process parameters, such as working distance, accelerating voltage, beam current and welding speed were investigated. The AB (Arata Beam) test method was also applied to characterize beam size and energy density of the electron beam welding process. The electron beam size was found to decrease with the increase of accelerating voltage and the decrease of working distance. So, in case of high voltage (150kV), spot size and energy density of electron beam were revealed to be 0.9mm and $6.5\times10^5W/\textrm{cm}^2$ respectively. The accelerating voltage among the welding parameters was found to be the most important factor governing the penetration depth. When the accelerating voltage of electron beam was low ($\leq$90kV), beam current and welding speed did not affect on the penetration depth significantly. However, in case of high voltage ($\geq$120kV), the depth of penetration increased very sensitively with the increase of beam current and the decrease of welding speed.

• Journal of Biosystems Engineering
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• v.35 no.2
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• pp.100-107
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• 2010

This study was conducted to investigate the effects of electric current stimuli and high-voltage electric field treatments on brown rice germination. The brown rice stimulated by electrical current stimuli, functional electrical stimuli of a pulse type, and high-voltage electric field treatments were observed (Type I, II and III). Treatment Type I was a method of semi-soaking brown rice with electric current stimuli of 0.13 V/cm, 0.19 V/cm, and 0.25 V/cm into Petri-dishes for 72 hours. Type II was a method of semi-soaking brown rice with functional electrical stimuli of a pulse type(DC 1 V, 1 Hz, 5%, and duty cycles of 5%, 20%, and 35%) into Petri-dishes for 72 hours. Type III was a method of water-soaking with high-voltage electric field treatments for 60 hours. High-voltage electric field treatments at 15 kV/cm were also conducted for 2.5 min, 7.5 min, and 10 min, respectively. The germination rate and the sprout growth of brown rice germinated by electric current stimuli with 0.13 V/cm, 0.19 V/cm, and 0.25 V/cm were increased by about 10-15% compared with those of the control group. The germination rate and the sprout growth of brown rice germinated by functional electrical stimuli of pulse type(DC 1 V, 1 Hz, 5% duty cycle) were increased by about 10∼15% compared to those of the control group. Also, the best effective treatment among high-voltage electric field treatments was the 10 min group at 15 kV/cm. The germination rate and the sprout growth of brown rice germinated by this treatment of 10 min at 15 kV/cm were increased by about 10∼20% compared to those of the control group. The treatments of electric current stimuli and high-voltage electric field accelerated the germination rate and sprout growth of brown rice by about 10∼15% compared to those of the control group.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.107-110
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• 2003

We have proposed a model to describe the current-voltage characteristics of fabricated devices using the Biot-Savart's law in order to develop superconducting flux flow transistors, The measured and calculated values, including induced voltage, transresistance and current gain were investigated in relation to the parallel flow of the vortices in a single microbridge. The predictions agreed very well with measured results.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.980-982
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• 2002

In this paper, we report the experimental results of the Forward-flyback DC-DC converter with current doubler and synchronous rectifier. The experimental converter, that has a output voltage 1.8V, output current 25A, maximum power of 45W, switching frequency of 290kHz and input voltage range of 36-75V, has been successfully implemented. As a result, in the entire voltage range the measured full load efficiency was above 82%, and the output voltage was regulated at 1.8V within ${\pm}$3% tolerance.