• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.15-16
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• 2015

According to 2014 fire statistical yearbook in the National Fire Data System, a main cause of fire is electrical fire except carelessness fire. Joint/contact badness is the one of the main cause of electrical fire. Furthermore, power relays which are used in electric panel board, motor control center and automation controller, are main element of automation system in the industry field. Overload, voltage unbalance and open-phase due to joint/contact badness of terminal make electric accidents or electrical fires. In order to prevent joint/contact badness of terminal, this paper proposes a sensing circuit of chattering, tracking, arc current, voltage unbalance and open-phase etc. Some experimental tests of the proposed apparatus confirm practicality and validity of the theoretical results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.687-691
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• 2011

In this paper, we design an 8-bit eSuse OTP (one-time programmable) memory in consideration of EM (electro-migration) and eFuse resistance variation based on a $0.18{\mu}m$ generic process, which is used for an analog trimming application. First, we use an external program voltage to increase the program power applied an eFuse. Secondly, we apply a scheme of precharging BL to VSS prior to RWL (read word line) activation and optimize read NMOS transistors to reduce the read current flowing through a non-programmed cell. Thirdly, we design a sensing margin test circuit with a variable pull-up load out of consideration for the eFuse resistance variation of a programmed eFuse. Finally, we increase program yield of eFuse OTP memory by splitting the length of an eFuse link.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.23-30
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• 2012

This paper proposes a novel adaptive header-based power gating structure to compensate for the performance loss and the increased wake-up time of the power gating structures induced by the negative bias temperature instability (NBTI) effect. The proposed structure consists of variable width footers based on the two-pass power gating and a new NBTI sensing circuit for an adaptive control. The simulation results of the proposed structure are compared to those of power gating without the adaptive control and show that both the circuit-delay and wake-up time dependence of the power gating structure on the NBTI stress is minimized with only 3% and 4% increase, respectively while keeping small leakage power and rush-current. In this paper, a 45 nm CMOS technology and predictive NBTI model have been used to implement the proposed circuits.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.1
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• pp.153-162
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• 2018

The importance of energy harvesting technique is increasing due to the elevated level of demand for sustainable power sources for wearable device applications. In this study, we developed an Energy Harvesting wearable Platform(EH-P) architecture which is used in the design of a multi-energy source based on TENG. The proposed switching circuit produces power with higher current at lower voltage from energy harvesting sources with lower current at higher voltage. This can powers microcontrollers for a short period of time by using PV and TENG complementarily placed under hard conditions for the sources such as indoors. As a result, the whole interface circuit is completely self-powered with this makes it possible to run of sensing on a Wearable device platform. It was possible to increase the wearable device life time by supplying more than 29% of the power consumption to wearable devices. The results presented in this paper show the potential of multi-energy harvesting platform for use in wearable harvesting applications, provide a means of choosing the energy harvesting source.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.1-6
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• 2007

Wireless Self-Powered Temperature Sensor for UHF Sensor Tags which are basic device for construction of ubiquitous sensor network is proposed. The key parameters of the target specification are resolution of $0.1\;^{\circ}C$ per output bit, below 1.5 V of operating voltage and below 5 uW of power consumption during sensing operation. Temperature sensor circuit consists of PTAT current generator, band gap reference circuit generating both reference voltage and current, Sigma-Delta Converter, and Digital Counter. Simulated maximum resolution was $0.23\;^{\circ}C/bit$ in 11-bit output. The proposed temperature sensor was fabricated by using a 0.25 m CMOS process. The chip area is $0.32\;{\times}\;0.22\;mm$ and the operating frequency is 2 MHz. Measured resolution from fabricated temperature sensor was $4\;^{\circ}C/bit$ in 8-bit output for the temperature range from $10^{\circ}C$ to $80^{\circ}C$.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.546-547
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• 2012

In the three-phase power system using the three-phase load, when any one-phase is open-phase, the unbalanced current flows and the single-phase power supplied by power supply produces over-current. As a result, the enormous damage and electrical fire can be given to the power system. In order to improve these problems, this paper is proposed a new control circuit topology for open-phase protection using semiconductor devices. Therefore, the proposed open-phase protection device (OPPD) enhances the sensing speed and precision, and has the advantage of simple fitting in the three-phase distribution panel in the field, as it manufactures into small size and light weight. As a result, the proposed OPPD minimizes the electrical fire from open-phase, and contributes for the stable driving of the power system.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.48-58
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• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

• Korean Journal of Optics and Photonics
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• v.30 no.6
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• pp.249-254
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• 2019

An optical current sensor device that measures electric current by the principle of the Faraday effect was designed and fabricated. The polarization-rotated reflection interferometer and the quadrature phase interferometer were introduced so as to improve the operational stability. Complex structures containing diverse optical components were integrated in a polymeric optical integrated circuit and manufactured in a small size. This structure allows sensing operation without extra bias feedback control, and reduces the phase change due to environmental temperature changes and vibration. However, the Verdet constant, which determines the Faraday effect, still exhibits an inherent temperature dependence. In this work, we tried to eliminate the residual temperature dependence of the optical current sensor based on polarization-rotated reflection interferometry. By varying the length of the fiber-optic wave plate, which is one of the optical components of the interferometer, we could compensate for the temperature dependence of the Verdet constant. The proposed optical current sensor exhibited measurement errors maintained within 0.2% over a temperature range, from 25℃ to 85℃.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.6
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• pp.619-628
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• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• Journal of IKEEE
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• v.20 no.2
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• pp.167-170
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• 2016

Replica bit-line technique is used for making enable signal of sense amplifier which accurately tracks bit-line of SRAM. However, threshold voltage variation in the replica bit-line circuit changes the cell current, which results in variation of the sense amplifier enable time, $T_{SAE}$. The variation of $T_{SAE}$ makes the sensing operation unstable. In this paper, in addition to conventional replica bit-line delay ($RBL_{conv}$), dual replica bit-line delay (DRBD) and multi-stage dual replica bit-line delay (MDRBD) which are used for reducing $T_{SAE}$ variation are briefly introduced, and the maximum possible number of on-cell which can satisfy $6{\sigma}$ sensing yield is determined through simulation at a supply voltage of 0.6V with 14nm FinFET technology. As a result, it is observed that performance of DRBD and MDRBD is improved 24.4% and 48.3% than $RBL_{conv}$ and energy consumption is reduced which 8% and 32.4% than $RBL_{conv}$.