• Title/Summary/Keyword: current ratio

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Application of the Convolution Method on the Fast Prediction of the Wind-Driven Current in a Samll Bay (소규모 만에서 취송류의 신속예측을 위한 convolution 기법의 적용)

  • 최석원;조규대;윤홍주
    • Journal of Environmental Science International
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    • v.8 no.3
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    • pp.299-307
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    • 1999
  • In order to fast predict the wind-driven current in a small bay, a convolution method in which the wind-driven current can be generated only with the local wind is developed and applied in the idealized bay and the idealized Sachon Bay. The accuracy of the convlution method is assessed through a series of the numerical experiements carried out in the jidealized bay and the idealized Sachon Bay. The optimum response function for the convolution method is obtained by minimizing the root man square (rms) difference between the current given by the numerical model and the current given by the convolution method. The north-south component of the response function shows simultaneous fluctuations in the wind and wind-driven current at marginal region while it shows "sea-saw" fluctuations (in which the wind and wind-driven current have opposite direction) at the central region in the idealized Sachon Bay. The present wind is strong enough to influence on the wind-driven current especially in the idealized Sachon Bay. The spatial average of the rms ratio defined as the ratio of the rms error to the rms speed is 0.05 in the idealized bay and 0.26 in the idealized Sachon Bay. The recover rate of kinetic energy(rrke) is 99% in the idealized bay and 94% in the idealized Sachon Bay. Thus, the predicted wind-driven current by the convolution model is in a good agreement with the computed one by the numerical model in the idealized bay and the idealized Sachon Bay.achon Bay.

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Analysis on Current Limiting Characteristics of the SFCL with Magnetically Coupled Two Coils and YBCO Coated Conductor Due to the Winding Direction and the Turn Number' Ratio Between Two Coils (직렬 연결된 두 코일과 YBCO Coated Conductor로 구성된 초전도 전류제한기의 권선방향과 권선 비에 따른 전류제한 특성 분석)

  • Lee, Dong-Hyeok;Du, Ho-Ik;Kim, Yong-Jin;Han, Byoung-Sung;Han, Sang-Chul;Lee, Jeong-Phil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.52-56
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    • 2011
  • The ongoing Superconducting Fault Current Limiter(SFCL) development mainly has focused on the application of commercializaton and power system through combining with normal-conducting device, moving away from current-limiting method, which is solely dependant on the existing superconductor. Compared to the structural development above, on the other hand, the research on applying superconducting current-limiting element to SFCL, the heart of SFCL, still has a lot left to do, apart form traditional resistive type SFCL. In this study, we looked into the current limiting characteristic of SFCL using core and coil. YBCO coated conductor with stainless steel stabilizer layer was verified by the excellent of current-limiting element of the resistive type SFCL that has a high Jc and index as well as being superior in mechanical property. Also, we study temperature characteristics and resistance characteristics, max voltage, response time and current-limiting ability that can be an indicator as current-limiting element while applying to superconducting current-limiting element caused by variation of winding direction, winding ratio of SFCL using core and coil.

the Active Current Bias Control using Flyback Converter (Flyback Converter를 이용한 Active Current Bias 제어)

  • Hwang Seon-Nam;Lim Sung-Kyoo;Lee Jun-Young
    • Proceedings of the KIPE Conference
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    • 2006.06a
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    • pp.84-87
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    • 2006
  • 본 연구는 Current Mirror에 있어서 Active Current Bias에 관하여 기술하였다. Current mirror에서 Active Current Bias를 걸어주는 보편적인 방법은 Current Bias단에 저항을 연결하여 저항값을 조절함으로 해서 Current를 제어하는 방법을 사용한다. Reference 전류를 제어하는데 있어 새로이 제안하는 것은 Flyback Converter를 이용하여 Acitve Current Bias를 제어 하려 한다. 트랜지스터를 이용하여 Current Mirror Circuit를 구성하고 Current Bias 측에 Flyback Converter Circuit을 연결한다. Flyback Converter의 PWM의 Duty Ratio를 조절함으로 해서 전류를 제어하는 특징을 이용하여 Active Current Bias를 제어한다.

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A study on reduction of excess sludge in activated sludge system from a petrochemical plant using electro fenton process (전기펜톤공정을 이용한 석유화학공장 폐활성슬러지의 감량화 가능성 평가)

  • Chung, Chong Min;Kim, Kyung Il;Shim, Natalia;Park, Chul Hee;Lee, Sang Hyup
    • Journal of Korean Society of Water and Wastewater
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    • v.23 no.5
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    • pp.669-678
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    • 2009
  • The reduction of excess activated sludge from petrochemical plant was investigated by the electro fenton (E-Fenton) process using electrogenerated hydroxyl radicals which lead to mineralization of activated sludge to $CO_2$, water and inorganic ions. Factors affecting the disintegration efficiency of excess activated sludge in E-Fenton process were examined in terms of five criteria: pH, $H_2O_2/Fe^{2+}$ molar ratio, current density, initial MLSS (mixed liquid suspended solids) concentration, $H_2O_2$ feeding mode. TSS total suspended solid and $TCOD_{cr}$ reduction rate increased with the increasing $H_2O_2/Fe^{2+}$ molar ratio and current density until 42 and $6.7 mA/cm^2$, respectively but further increase of $H_2O_2/Fe^{2+}$ molar ratio and current density would reduce the reduction rate. On the other hand, as expected, increasing pH and initial MLSS concentration of activated sludge decreas TSS and $TCOD_{cr}$ reduction rate. The E-Fenton process was gradually increased during first 30 minutes and then linearly proceed till 120 minutes. The optimal E-Fenton condition showed TSS reduction rate of 62~63% and $TCOD_{cr}$ (total chemical oxygen demand) reduction rate of 55~56%. Molar ratio $H_2O_2/Fe^{2+} = 42$ was determined as optimal E-Fenton condition with initial $Fe^{2+}$ dose of 5.4 mM and current density of $6.7{\sim}13.3 mA/cm^2$, initial MLSS of 7,600 mg/L and pH 2 were chosen as the most efficient E-Fenton condition.

A Study on Characteristics of Injected Fuel Pressure Waves of a Solenoid Type Diesel Common Rail Injector with Controlling Current Wave for Driving the Injector (솔레노이드 타입 디젤 커먼레일 인젝터 구동을 위한 전류 파형 변화에 따른 분사 연료 압력파 특성)

  • Kim, Kil Tae;Lee, Choong Hoon
    • Journal of ILASS-Korea
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    • v.21 no.3
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    • pp.155-161
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    • 2016
  • Injected fuel pressure waves of a common rail injector with various current profiles supplied to the injecor were measured using Bosch method. In order to drive the common rail injector, the current in the solenoid should be controlled using what is known as a peak and hold pattern, which consists of a high current level with a short time duration (peak) in the first step and a low current level with a long time duration (hold) in the subsequent step. The current profile can be shaped by swithcing an injector driving power source with the peak and hold waves. The capture, compare and PWM (CCP) pin in the microprocessor was used to generate the combined peak and hold waves. The PWM square wave generated from the CCP pin has a duty ratio of 100% for the peak current and 10% or 30% for the hold pattern. Five patterns of the current profile were generated by combining the peak and hold wave. The common rail pressure is controlled at 75, 100, and 130 MPa. As the fuel rail pressure increases, the variations of the measured fuel injection pressure wave according to the current profiles decrease.

The effect of extinction ratio, chirp and SPM on transmission performance of directly modulated 2.5 Gbit/s transmitter (소광비, 처핑 및 자기위상변조가 2.5Gbit/s 직접변조한 DFB-LD의 전송성능에 미치는 영향)

  • 김근영;이용기
    • Korean Journal of Optics and Photonics
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    • v.12 no.3
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    • pp.212-218
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    • 2001
  • We experimentally investigated the dependence of extinction ratio and chirp on bias current which was injected into DFB-LD in a directly modulated 2.5 Obitls transmitter. Through the abnormal dispersion transmission, we found that transmission power penalty is minimized at 8-10 dB extinction ratio (bias current at 1.5-1.8 fold above threshold current). Also, we discussed the relation between extinction ratio and self phase modulation (SPM) through the 240 km abnormal dispersion transmission. When SPM takes effect, we obtained the best receiver sensitivity for specific system configuration at 10.4 dB and 8.4 dB extinction ratio, below and above 200km transmission distance, respectively. ively.

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SI-BASED MAGNETIC TUNNELING TRANSISTOR WITH HIGH TRANSFER RATIO

  • S. H. Jang;Lee, J. H.;T. Kang;Kim, K. Y.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.24-24
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    • 2003
  • Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

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A Study on the MOCVD Growth and Characterization of Resonant Tunneling Structures (공명 투과 구조의 MOCVD 성장 및 특성에 관한 연구)

  • 류정호;서광석
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.7
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    • pp.1036-1043
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    • 1993
  • GaAs/AIGaAs resonant tunneling structures have been grown by atmospheric pressure MOCVD. Resonant tunneling diodes fabricated with the structure grown at 650t showed a high peak-to-valley (P/V) current ratio of 2.35 at room temperature. P/V current ratio increased to 15.3 at 77K. Numerically calculated peak current agrees well with the experimental result. Resonant tunneling diodes with AIGaAs as a barrier and InGaAs as a quantum well and a spacer layer yielded a high P/V current ratio of 4.0 and a peak current density of 8.6KA/c# at room temperature because of increased carrier supply.

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Design of a TRIAC Dimmable LED Driver Chip with a Wide Tuning Range and Two-Stage Uniform Dimming

  • Chang, Changyuan;Li, Zhen;Li, Yuanye;Hong, Chao
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.640-650
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    • 2018
  • A TRIAC dimmable LED driver with a wide tuning range and a two-stage uniform dimming scheme is proposed in this paper. To solve the restricted dimming range problem caused by the limited conduction ratio of TRIAC dimmers, a conduction ratio compensation technique is introduced, which can increase the output current up to the rated output current when the TRIAC dimmer turns to the maximum conduction ratio. For further optimization, a two-stage uniform dimming diagram with a rapid dimming curve and a slow dimming curve is designed to make the LED driver regulated visually uniform in the whole adjustable range of the TRIAC dimmer. The proposed control chip is fabricated in a TSMC $0.35{\mu}m$ 5V/650V CMOS/LDMOS process, and verified on a 21V/500mA circuit prototype. The test results show that, in the 90V/60Hz~132V/60Hz ac input range, the voltage linear regulation is 2.6%, the power factor is 99.5% and the efficiency is 83%. Moreover, in the dimming mode, the dimming rate is less than 1% when the maximum dimming current is 516mA and the minimum dimming current is only about 5mA.

Effects of Current Density and Organic Additives on via Copper Electroplating for 3D Packaging (3D패키지용 Via 구리충전 시 전류밀도와 유기첨가제의 영향)

  • Choi, Eun-Hey;Lee, Youn-Seoung;Rha, Sa-Kyun
    • Korean Journal of Materials Research
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    • v.22 no.7
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    • pp.374-378
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    • 2012
  • In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.