• 한국통신학회논문지
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• 제19권12호
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• pp.2426-2438
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• 1994

본 논문에서는 DFB 반도체 레이저의 직접 주파수변조 응답특성에 대한 새로운 전기적 회로모델을 제시하였다. 특히 본 논문에서는 캐리어농도의 변조효과뿐만 아니고 온도변조효과에 따른 DFB 반도체 레이저의 변조특성을 동시에 고려함으로써 DC에서 수 GHz의 변조주파수 범위에 이르는 주파수응답특성을 얻을 수 있었다. 온도변조효과에 의한 주파수응답특성은 레이저 다이오드의 구조로부터 회로모델링하여 기존의 실험치와 비교하였으며, 캐리어농도변조효과에 이한 회로모델링은 DFB 레이저의 율방정식(rate equations)을 선형화함으로써 소신호 회로모델을 구하고 이를 기존의 수치해석에 의해 제시된 결과치와 비교하여 전체적인 주파수응답특성이 잘 일치함을 알 수 있었다.

• BMB Reports
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• 제46권7호
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• pp.370-375
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• 2013

Ischemia is characterized by oxidative stress and changes in the antioxidant defense system. Our recent in vitro study showed that 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride protects cortical astrocytes against oxidative stress. In the current study, we examined the effects of 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride on ischemia-induced neuronal damage in a gerbil ischemia/reperfusion models. Extensive neuronal death in the hippocampal CA1 area was observed 4 days after ischemia/reperfusion. Intraperitoneal injection of 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride (0.3 mg/kg body weight) significantly prevented neuronal death in the CA1 region of the hippocampus in response to transient forebrain ischemia. 2-Cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride administration reduced ischemia-induced increases in reactive oxygen species levels and malondialdehyde content. It also attenuated the associated reductions in glutathione level and superoxide dismutase, catalase, and glutathione peroxidase activities. Taken together, our results suggest that 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride protects against ischemia-induced neuronal damage by reducing oxidative stress through its antioxidant actions.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 대한전자공학회논문지SD
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• 제47권2호
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• pp.40-50
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• 2010

본 논문은 미세 CMOS 공정의 PMOS 트랜지스터에 높은 전류가 인가될 때 발생하는 기생 PNP 바이폴라 트랜지스터의 스냅백과 breakdown 동작에 초점을 맞춘다. $0.13\;{\mu}m$ CMOS 공정을 이용해 제작한 다양한 I/O 구조를 분석함으로써 PMOSFET의 ESD 손상 현상의 원인을 규명하였다. 즉, 인접한 다이오드로부터 PMOSFET의 바디로 전하가 주입됨으로써 PMOSFET의 기생 PNP 트랜지스터가 부분적으로 turn-on되는 현상이 발생하여 ESD에 대한 저항성을 저하시킨다. 2차원 소자 시뮬레이션을 통해 레이아웃의 기하학적 변수의 영향을 분석하였다. 이를 기반으로 새로운 PMOSFET ESD 손상을 방지하는 설계 방법을 제안한다.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1682-1691
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• 2018

Natural ester is a suitable substitute for mineral oil and has been widely used in AC transformer in many countries. In order to further application of natural ester in direct current (DC) equipment, it is needed to investigate its long term insulation property under DC condition. In this paper, a thermal ageing experiment was conducted for both mineral oil-paper and natural ester-paper insulation. The DC breakdown and space charge characteristics of insulation paper impregnated with natural ester and mineral oil was compared. Results show that the resistivity of the paper immersed in natural ester and mineral oil both increase as the ageing goes on. While insulation paper impregnated with natural ester has higher resistivity and DC breakdown voltage than the paper impregnated with mineral oil. The DC breakdown voltage for the oil impregnated insulation paper being DC pre-stressing is higher than that without pre-stressing. The average DC breakdown field strength difference between the test with pre-stressing and without pre-stressing clearly shows that there is an apparent enhancement effect for the homo-charge injection on the DC breakdown.

• The Korean Journal of Pain
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• 제33권1호
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• pp.48-53
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• 2020

Background: The aim of this study was to clarify the topographical relationship between the accessory nerve (AN) and transverse cervical artery (TCA) to provide safe and convenient injection points for AN blockade. Methods: This study included 21 and 30 shoulders of 14 embalmed Korean adult cadavers and 15 patients, respectively, for dissection and ultrasound (US) examination. Results: The courses of the TCA and AN in the scapular region were classified into four types based on their positional relationships. Type A indicated the nerve that was medial to the artery and ran parallel without changing its location (38%). In type B (38%), the nerve was lateral to the artery and ran parallel without changing its location. In type C (19%), the nerve or artery traversed each other only once during the whole course. In type D (5%), the nerve or artery traversed each other more than twice forming a twist. At the levels of lines I-IV, the nerve was relatively close to the artery (approximately 10 mm). TCAs were observed in all specimens around the superior angle of the scapula at the level of line II, whereas they were not found below line VI. In US images of the patients, the TCA was commonly observed at the level of line II (93.3%) where all ANs and TCAs were observed in cadaveric dissection. Conclusions: The results expand the current knowledge of the relation between the AN and TCA, and provide helpful information for selective diagnostic nerve blocks in the scapular region.

• 센서학회지
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• 제12권5호
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• pp.218-224
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• 2003

플라즈마, $H_2$와 $H_2$/플라즈마 공정에 의해 수소 처리시킨 n-채널 다결정실리콘 박막트랜지스터(TFT)를 제작하였다. 전압 바이어스 스트레스로 게이트 산화막에 유기된 감지 특성들을 분석하였다. 수소 처리시킨 소자에서 전기적 스트레스 조건에 의해 야기된 인자적 감지 특성들은 드레인전류, 문턱전압(Vth), 문턱전압 아래기울기(S), 그리고 최대 전달 컨덕턴스(Gm) 값을 측정하여 조사하였다. 분석 결과로서, 수소화 처리시킨 n-채널 다결정 실리콘 박막 트랜지스터에서 감지된 열화특성은 다결정실리콘/산화막의 계면과 다결정 실리콘의 그레인 경계에서 실리콘-수소(Si-H) 본드의 해리에 의한 현수 본드의 증가가 원인이 되었다. 게이트 산화막내 트랩의 생성은 채널 영역에서 게이트 산화막 속으로 핫 전자 주입에 의해 야기되었다.

• 센서학회지
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• 제6권4호
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• pp.252-257
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• 1997

ITO(indium-tin-oxide)/PPV(poly(p-phenylenevihylene))/음극 전극의 단층구조와 ITO /PVK(poly(N-vinylcarbazole))/PPV/음극전극의 이층구조를 가진 유기 EL(electroluminescence) 소자를 제작하였으며, 전기-광학적 특성을 측정하였다. 실험 결과, 단층구조에서는 PPV막의 열변환 온도를 $140^{\circ}C$에서 $260^{\circ}C$로 증가할수록 최대 휘도가 $118.8\;cd/m^{2}$(20V)에서 $21.14\;cd/m^{2}$(28V)으로 감소하였고, EL 스펙트럼의 최대 피크가 500nm에서 580nm로 이동하였다. 또한, 음극전극의 일함수가 낮을수록 소자의 발광휘도와 주입 전류는 증가되었다. 이층구조에서는 PVK막의 농도가 감소함에 따라 발광휘도가 $70.71\;cd/m^{2}$(32V)에서 $152.7\;cd/m^{2}$(26V)으로 증가하였다.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.