• Title/Summary/Keyword: current induced magnetization switching

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Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers

  • Kim, Woo-Jin;Lee, Kyung-Jin;Lee, Taek-Dong
    • Journal of Magnetics
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    • v.14 no.3
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    • pp.104-107
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    • 2009
  • The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

Effect of Energy Barrier Distribution on Current-Induced Magnetization Switching with Short Current Pulses (짧은 전류 펄스를 이용한 전류 유도 자화 반전에서 에너지 장벽 분포의 효과)

  • Kim, Woo-Yeong;Lee, Kyung-Jin
    • Journal of the Korean Magnetics Society
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    • v.21 no.2
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    • pp.48-51
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    • 2011
  • We performed macro-spin simulation studies of the current-induced magnetization reversal of nanomagnetic elements with short current pulses. A special attention was paid to the effect of the energy barrier on the switching current distribution. The switching current and its distribution increase with decreasing the current pulse-width. The relationship between the energy barrier and switching current distribution is described by the Arrhenius-N$\'{e}$el law at a long pulse-width regime. At a regime of short pulse-width, however, the relationship is left unaddressed. The difficulty to address this issue arises because the magnetization switching with a short current pulse is governed not by the thermal activation but by the precession motion. Therefore, an exact formulation for the short pulse regime by solving the Fokker-Plank equation is needed to understand the result.

Technology Trend of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM) (스핀전달토크형 자기저항메모리(STT-MRAM) 기술개발 동향)

  • Kim, D.K.;Cho, J.U.;Noh, S.J.;Kim, Y.K.
    • Journal of the Korean Magnetics Society
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    • v.19 no.1
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    • pp.22-27
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    • 2009
  • Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.

Non-Equilibrium Green Function Method in Spin Transfer Torque

  • You, Chun-Yeol
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.72-76
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    • 2007
  • We investigate the spin transfer torque in metallic multilayer system by employing Keldysh non-equilibrium Green function method. We study the dependences of the spin transfer torque on the detailed energy configuration of ferromagnetic, spacer, and lead layers. With Keldysh non-equilibrium Green function method applied to a single band model, we explore spin transfer torque effect in various layer structures and for various material parameters.